1359results about How to "Avoid stress" patented technology

A locking device prevents stressing of other components used to hold tool portions against relative movement until a desired location is reached. A locking dog holds a first component, such as a sliding sleeve to a second component, such as a mandrel until pressure can move a piston and remove support for the dog. The same pressure that removes support for the dog to unlock the lock also forces a retainer, such as a shear pin that holds a sleeve to break to allow the sleeve to shift. The locking dog keeps stress off the shear pin when the locking dog is supported in the run in configuration. An alternative design uses a grease filled cavity to dampen shocks that could load a shear pin to the point of failure.

The invention relates to a new technology for lead zinc sulfide ore floatation. Lead sulfide mineral is preferably carried out with mixed floatation in a neutral or weak alkali medium, then zinc floating and lead sulfur separation are carried out in a high alkali medium. The lead sulfide mineral is firstly floated to enter product, before zinc floating, lead sulfide mixed product is obtained, only pure zinc mineral enters slurry in a zinc floating work zone, thus being beneficial to zinc floatation and avoiding the operation method of heavy pulling and heavy stress; and lead tailing has no sulfur mineral, thus reducing useless poor circulation formed in zinc floating of the sulfur mineral, saving the beneficiation reagent and improving the sorting standard.

The invention discloses an LED (light emitting diode) epitaxy structure and a preparation method thereof. The LED epitaxy structure successively comprises a substrate, a GaN nucleating layer, multiple pairs of superlattice buffer layers, an n-GaN layer, an MQW luminescent layer, a p-GaN layer and a p-type contact layer from bottom to top, wherein each superlattice buffer layer is formed by an AlGaN/n-GaN alternately stacked structure. The LED epitaxy structure is characterized in that Al(n) is defined to represent an Al component value in the nth pair of AlGaN/n-GaN superlattice buffer layer; N(n) represents the n-type impurity concentration value in the nth pair of AlGaN/n-GaN superlattice buffer layer; the variation trend of Al(n) is gradually lowered after being gradually raised; and the variation trend of N(n) is gradually lowered after being gradually raised. According to the LED epitaxy structure provided by the invention, lattice stress caused by lattice mismatch due to that a sapphire substrate and the GaN lattice are not matched can be effectively and fully released on a bottom layer growth section so as to greatly lower the warping of an epitaxial wafer in the whole high-temperature growth process and improve the wavelength concentricity and yield of the epitaxial wafer. Meanwhile, the GaN lattice quality is effectively improved, the lattice dislocation density is reduced, and the optical-electrical characteristic of the device is more stable.

Packaging techniques for planar resonator gyroscopes, such as disc resonator gyroscopes (DRGs) are disclosed. A gyroscope die may be attached to its package substrate on a central disc area that is inboard of its embedded electrodes. This configuration eliminates contact of the die with the package substrate beneath the embedded electrodes allowing the internal electrode support structure to expand or contract freely without stress as its temperature changes. The central attachment can also be used diminish the package temperature gradients on the periphery of the die, if the thermal conductivity of the central disc attachment material is higher than the package substrate. Temperature gradients across the resonator also lead to thermoelastic damping asymmetry and rate drift. In addition, the electrical connections to the die may be formed by vertical vias within the central disc attachment area or by thin wirebonds to peripheral I/O pads on the gyro chip.

The invention discloses a preparation method of a three-dimensional memory. The preparation method comprises the steps of forming a first stack on a substrate; forming a first channel hole which vertically runs through the first stack and reaches the substrate; forming a first channel hole inner layer in the first channel hole; forming a sacrificial part in the first channel hole inner layer; forming a second stack on the first stack; forming a second channel hole which vertically runs through the second stack and reaches the sacrificial part; and removing the sacrificial part and the first channel hole inner layer. According to the preparation method of the three-dimensional memory, due to the arrangement of the sacrificial part, better stopping on a sacrificial layer can be achieved whenthe second channel hole is prepared, so that the channel hole with a relatively large depth and relatively good appearance can be formed by the first channel hole and the second channel hole.

The invention relates to a preparation method of a low-stress and high-purity semi-insulating SiC single crystal. The method includes the steps that synthesis of high-purity SiC powder is carried out, crystal growth is carried out with a physical vapor transport method, the concentration of shallow energy level impurities is reduced in the synthesis and crystal growth processes, a heat insulation material is subjected to high-temperature pretreatment, and boron impurities are prevented from being blended in; a silicon powder raw material and a carbon powder raw material are put into a graphite crucible with a coating for SiC synthesis; the obtained high-purity SiC powder is pretreated, seed crystals are fed, vacuumizing is carried out, high-purity argon or mixed gas of argon and hydrogen is introduced in to carry out crystal growth, then the temperature is rapidly lowered to enlarge point defects, and then the temperature is slowly lowered to the room temperature to eliminate stress. SiC crystal growth is carried out in an equilibrium state, so that the obtained crystal is small in stress, low in microtubule density and good in quality, and the resistivity on the area of the whole crystal is 108 ohm.cm or above. The method is small in preparation investment, high in safety and free of pollution.

The invention relates to a three-dimensional elastic support. The three-dimensional elastic support comprises a sliding plate, a top seat, a pedestal and a disk spring component, wherein the lower surface of the sliding plate is a smooth plane; the main body of the top seat is inverted cup-shaped; the sliding plate is positioned on a top plate of the top seat; the top plate is connected with a guide column which extends downwards; the main body of the pedestal is cup-shaped; an upper sleeve of the pedestal is cylindrical; the disk spring component sleeves the guide column, the upper end is supported against the top plate, and the lower end is supported against the bottom plate; an upper flange on the upper sleeve and a lower flange on the bottom plate are provided with threaded fastening members. The support has a simple, firm and durable structure and wide applicability; the requirement on free sliding in a three-dimensional space of a supported object can be met while complex change load is born; the supported object is also allowed to rotate around the normal of the supporting surface; the support is particularly suitable for supporting facilities and equipment under complex working conditions such as superimposed changeable load and multi-dimensional deformation.

The invention provides a grinder of a bullet train tread cleaner, wherein the grinder is made of a composite material; the composite materials comprises modified phenolic resin 6818, iron powder, copper fibres, steel fibres, sepiolite, potassium feldspar, graphite, cryolite and aluminium oxide; the invention further provides a production method of the grinder.

The invention discloses a high-strength high-plasticity cold-rolled steel plate for automobiles and a production method thereof. The high-strength high-plasticity cold-rolled steel plate comprises, by weight, 0.25-0.35% of C, 0.8-1.2% of Si, 2.0-2.5% of Mn, less than or equal to 0.02% of P, less than or equal to 0.005% of S, 0.5-1.0% of Al, 0.001-0.002% of B and the balance Fe and unavoidable impurities. The production method comprises smelting, continuous casting, hot rolling, pickling, cold rolling and continuous annealing. A continuous annealing heating temperature is in a range of 800-850 DEG C, thermal insulation time is in a range of 150-180s, a cooling rate is greater than or equal to 50 DEG C/s, a quenching temperature is in a range of 250-280 DEG C, a partition temperature is in a range of 350-400 DEG C, partition time is in a range of 300-600s and after partition, the product is cooled to a room temperature at a cooling rate greater than or equal to 50 DEG C/s.

The invention relates to a rehabilitation mechanical arm and a rehabilitation robot and relates to the field of medical equipment. The rehabilitation mechanical arm comprises a mechanical arm body formed by six rotary moving joints which are serially connected and is characterized in that the mechanical arm body comprise a shoulder joint component, an elbow joint component, a forearm rotating component and wrist moving component which are sequentially connected, the shoulder joint component comprises a first joint component, a second joint component and a third joint component, and the three rotary axes of the first joint component, the second joint component and the third joint component intersect at one point which is located at the rotation central point of the shoulder joint of a user.The rehabilitation robot comprises a back frame, a cantilever beam and the rehabilitation mechanical arm and is characterized in that one or a pair of the rehabilitation mechanical arms are arrangedon the back frame through the cantilever beam, and the first joint component is slidably connected to the cantilever beam. The rehabilitation mechanical arm and the rehabilitation robot are simple instructure, low in cost and simple to operate.

The method is: Put many glass pipe in order to form a specific structure (photon crystal optical fibre prefab stick) in the glass cannula. The thin glass pipe is longer then the others. The equipment controls the pressure of photon-crystal optical fibre prefab stick. In another word is to vacuum the glass cannula, to input the thin glass pipe of 10 -1 mbar air.

The invention discloses a method for preparing a sensor coil for an optical fiber current sensor, which comprises the steps that: (1) an annular coil frame is prepared with a relatively rough outer side surface, and an angle bracket is arranged on the outer side surface and the two sides of the angle bracket are both tangent with the coil frame; (2) the torsion of an optical fiber is removed to release stress; (3) the coil frame is fixed on the horizontal axis to ensure that the normal of the coil frame and the axes of the horizontal axis coincide and the horizontal axis of the coil frame is evenly rotated and fixed to fix the optical fiber on the coil frame; (4) symmetrical distributed points are chosen along the circumference direction of the coil frame to fix the optical fiber; (5) the two ends of the optical fiber are respectively provided with 1/4 wave plate and reflector and fixed on a bracket, the projection of the 1/4 wave plate and the reflector on the normal of the coil frame coincide and the end of the optical fiber provided with the 1/4 wave plate is connected with a polarization maintaining optical cable; (6) the coil is put into an incubator to remove stress introduced during the fixing process of the optical fiber; (7) the coil is fixed in a closed annular outer shell and sealed.

The invention discloses a pressure cooker which comprises an outer pot, annular supporting pieces, a coil disc, an air duct support and a fan. A turned edge extending inwards is arranged at the lower end of the outer pot. An opening in the bottom of the outer pot is defined by the turned edge. The turned edge is provided with a plurality of elastic pieces. The annular supporting pieces support the elastic pieces and can move in the vertical direction. The coil disc is arranged on the annular supporting pieces and located below the annular supporting pieces. The opening in the bottom is matched with the coil disc. The air duct support is arranged on the outer bottom wall of the outer pot. An outer annular protrusion protruding towards the coil disc is arranged on the upper surface of the air duct support. The width, in the radial direction, of the outer annular protrusion is matched with the width, in the radial direction, of the coil disc. An air duct with an air inlet and an air outlet is defined by the outer annular protrusion, the upper surface of the air duct support, the lower surface of the coil disc and the outer pot together. The fan is arranged at the air outlet. According to the pressure cooker, the coil disc is good in cooling effect, the outer pot is high in structural strength, and the pressure cooker is stably supported by an inner pot.

The invention relates to a method for removing potassium nitrate impurity ions on line in chemical tempering production. The method implements the invention through the following steps in the mass chemical tempering operation: (1) the concentration of sodium, calcium and magnesium ions in molten potassium nitrate in a chemical tempering furnace is detected; when the glass stress and strength are lower than set values after a certain amount of chemical tempering, the tempering is stopped, and the concentration of the sodium, calcium and magnesium ions in the molten potassium nitrate in the furnace is recorded; (2) an appropriate amount of treated reagent (potassium pyroantimonate) is added in the potassium nitrate of which the tempering is stopped and simultaneously is stirred, so that the reaction is uniform and full; (3) the molten potassium nitrate obtained in the step (2) stands at constant temperature, so that the molten potassium nitrate reacts, is deposited and clarified thoroughly; and (4) after the molten potassium nitrate obtained in step (3) is fully clarified, the chemical tempering is re-started. The method can reduce the replacing frequency of the chemically tempered potassium nitrate, reduces the cost, improves the production efficiency, is simple in process and is convenient to implement.

The invention provides a water conservancy gate structure with high safety and a use method thereof. The device comprises a gate plate (9) for blocking a water channel opening (1). An external thread sleeve (7) is fixedly connected to the upper side of the gate plate (9) and used for stretching into the hollow portion of a rotary shaft (6) to be in threaded fit with an internal thread ring part (71) at the lower end, the upper end of the rotary shaft (6) is connected with a motor rotor (51) in a drive motor box (5) installed on a structure base body (10), and two roller bearing assemblies are installed on the land side of the gate plate (9) from top to bottom. Each roller bearing assembly comprises two bearing rollers (88) which are opposite in the horizontal direction and are rotationally installed on the left side and the right side of the gate plate (9) respectively.

The invention discloses a getting-up auxiliary structure which is applied on a chair. The structure comprises two telescopic supporting rods, a first seat body, and a second seat body. One ends of the two telescopic supporting rods are respectively hinged to one end of the fist seat body. The other ends of the two telescopic supporting rods are respectively hinged to one end of the second seat body. The other end of the first seat body and the other end of the second seat body are hinged to form an integral body. When the telescopic supporting rods are not influenced by any other external force, stress generated by elastic elements in the telescopic supporting rods can make the telescopic supporting rods in extending states, and a preset included angle is formed between the second seat body and the first seat body. When the telescopic supporting rods are under the force applied by the second seat body, the stress generated by the internal elastic elements can be overcome, the telescopic supporting rods are in folded states, and the second seat body and the first seat body are superposed. With the structure, a senior user can easily slowly sit down or get up, and a problem of falling and injury caused by waist and leg weakness is avoided.

The invention relates to a method of preparing a multi-component super-hard reaction film for a multiple-arc ion-plated nitride of titanium, aluminum, chrome, silicon and yttrium. The method includes the following steps in sequence: the confirmation of the deposition technique and the design of the components of the target material (1); the preparation of a alloy target (2); the selection and pre-processing of a workpiece sample (3); the confirmation of the quantity of the electric arc source (4); the confirmation of the deposition technique (5); the acquirement of a transition layer (6); the processing of vacuum heating (7) and the rotation of the workpiece sample. The method confirms the variation range of the components of the Ti, Al, Cr, Si, Y elements in the complex Ti-Al-Cr-Si-Y alloy target and causes the super-hard reaction film of the (TiAlCrSiY)N to have the advantages of strong adhesive power (larger than or equal to 180 N) and high hardness (larger than or equal to HV3200).

The invention discloses tailored blank laser welding equipment. A pressing mechanism of traditional tailored blank laser welding equipment is replaced through an electromagnetic platform; the structure is simple; a space above a plate to be welded is wide without influencing the movement of a welding head; downward pressure of the pressing mechanism of the traditional tailored blank laser welding equipment is replaced by sucking force generated by an electromagnet to achieve the purpose of plate fixation; the stress generated in the welding can be overcome to prevent a welding line from cracking; an indentation on the surface of the plate caused by the use of the pressing mechanism also can be prevented; and the condition of influence on the welding effect due to uneven stress is not generated. The invention further discloses a tailored blank laser welding method.

The invention discloses an epitaxial wafer of a light-emitting diode (LED) and the manufacturing method of the epitaxial wafer and belongs to the technical field of diodes. The epitaxial wafer comprises a substrate layer, a buffer layer, an N-type layer, a multiple quantum well (MQW) layer and a P-type layer, wherein the substrate layer, the buffer layer, the N-type layer, the MQW layer and the P-type layer are sequentially covered on the substrate layer; the N-type layer is made of n-type doped GaN; the MQW layer comprises a plurality of quantum barrier layers and a plurality of quantum well layers which alternately grow with the quantum barrier layers; at least one of the quantum barrier layers comprises three sub-quantum barrier layers; a sub-quantum barrier layer positioned in the middle of the three sub-quantum barrier layers is made of n-type doped AlxInyGa[1-x-y]N, and the n-type doping concentration of the sub-quantum barrier layer is not greater than that of the N-type layer; and the other two sub-quantum barrier layers are made of non-doped GaN, wherein x is more than 0 and less than 1, and y is more than 0 and less than 1. According to the technical scheme, the electrostatic resistance of the LED can be improved.