High-speed single crystal growth device

A growth device and single crystal technology, which is applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problem of limited heat dissipation effect on the strengthened crystal side, to avoid dislocation proliferation, reduce production costs, and shorten single crystal growth cycle effect

Inactive Publication Date: 2016-03-30
XI AN JIAOTONG UNIV
View PDF4 Cites 21 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The heat dissipation effect of the strengthened crystal side is limited by the traditional water cooling jacket arrangement method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-speed single crystal growth device
  • High-speed single crystal growth device
  • High-speed single crystal growth device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0030] see figure 1 , is a schematic cross-sectional view of a high-speed single crystal growth device of the present invention, including a guide tube 1, a thermal insulation layer 2, a graphite heater 3, a water cooling jacket 4, a crystal 5, a furnace wall 6, a graphite crucible 7, and a quartz crucible 8. Silicon melt 9, support shaft 10 and pulling device 11. The outside of the graphite crucible 7 and the quartz crucible 8 is a graphite heater 3, the outside of the graphite heater 3 is a heat insulation layer 2 to prevent heat loss, and above the silicon crystal 5 is a crystal pulling device 11 for controlling crystal pulling and rotation. The design diagram of the core area of ​​the present invention is as follows: figure 2 shown.

[0031] The guide tube 1 and the water cooling jacket 4 in the device are the core components of the present invention...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a high-speed single crystal growth device which is characterized in that a guide cylinder is arranged above a crucible and the shape of the guide cylinder near a triple point is specially designed so as to control the direction of heat flow above a solidification interface; and a water jacket is arranged in the guide cylinder so as to reinforce the heat transfer of the crystal side. By designing the guide cylinder structure, the length of the water jacket extends to be near a solid-liquid interface. Compared with the conventional water jacket design, the heat dissipation capacity of the crystal side can be intensified greatly, and the crystal pulling speed is improved. The technical shortcoming that since the water jacket is too close to the solid-liquid interface, so that the concavity of the solid-liquid interface is increased is overcome, the flat solid-liquid interface shape can be achieved in the whole crystal pulling process, and the value of thermal stress in the crystal is controlled at a low level. Therefore, the high-speed single crystal growth device is favorable for quickly pulling high-quality single crystal.

Description

Technical field: [0001] The invention belongs to the field of Czochralski crystal growth devices, in particular to a high-speed single crystal growth device. Background technique: [0002] The method used for growing a single crystal silicon rod by the Czochralski method (Czochralski, CZ) is taken as an example below. The Czochralski single crystal growth method was invented by Polish scientist Jan Czochralski in 1918. The method is to use a rotating seed crystal to continuously pull a single crystal from a melt in a crucible rotating in the opposite direction. [0003] The growth of single crystal silicon by CZ method mainly includes the following steps: first, put high-purity polycrystalline silicon raw materials and dopant substances into the quartz crucible; Heating to melt the silicon raw material; when the temperature of the melt is stable, the seed crystal is immersed in the silicon melt to start seeding; the thermal stress when the seed crystal is in contact with th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/00C30B29/06
CPCC30B15/00C30B29/06
Inventor 刘立军赵文翰丁俊岭
Owner XI AN JIAOTONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap