Epitaxial wafer of light-emitting diode (LED) and making method of epitaxial wafer

Abstract

The invention discloses an epitaxial wafer of a light-emitting diode (LED) and the manufacturing method of the epitaxial wafer and belongs to the technical field of diodes. The epitaxial wafer comprises a substrate layer, a buffer layer, an N-type layer, a multiple quantum well (MQW) layer and a P-type layer, wherein the substrate layer, the buffer layer, the N-type layer, the MQW layer and the P-type layer are sequentially covered on the substrate layer; the N-type layer is made of n-type doped GaN; the MQW layer comprises a plurality of quantum barrier layers and a plurality of quantum well layers which alternately grow with the quantum barrier layers; at least one of the quantum barrier layers comprises three sub-quantum barrier layers; a sub-quantum barrier layer positioned in the middle of the three sub-quantum barrier layers is made of n-type doped AlxInyGa[1-x-y]N, and the n-type doping concentration of the sub-quantum barrier layer is not greater than that of the N-type layer; and the other two sub-quantum barrier layers are made of non-doped GaN, wherein x is more than 0 and less than 1, and y is more than 0 and less than 1. According to the technical scheme, the electrostatic resistance of the LED can be improved.

Description

Technical field [0001] The present invention relates to the field of diode technology, in particular to an epitaxial wafer of a light emitting diode and a manufacturing method thereof. Background technique [0002] The LED (Light Emitting Diode) chip is a semiconductor chip, which is the core component of the LED. The LED chip includes a GaN-based epitaxial wafer grown on a substrate and an electrode fabricated on the epitaxial wafer. [0003] Among them, the epitaxial wafer mainly includes an N-type layer, an MQW (Multiple Quantum Well) layer and a P-type layer. When current passes through the epitaxial wafer, electrons in the N-type layer and holes in the P-type layer recombine in the MQW layer, and then emit energy in the form of photons. Therefore, the MQW layer is also called the light-emitting layer. The MQW layer is a multilayer structure formed by alternate growth of two different thin layers of semiconductor materials. One thin layer of semiconductor material is a quan...

AI Technical Summary

Problems solved by technology

[0005] Each quantum barrier layer in the MQW layer of the existing epitaxial wafer is a single-layer structure, and the atoms in each layer are arranged neatly, and lattice mismatch will occur at the junction of the quantum barrier layer and the adjacent quantum well layer; and the lattice mismatch The combination will generate compressive stress, strengthen the polarization of the quantum well region, cause the energy band of the quantum well region to bend, and affect the internal quantum efficiency of the LED.

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