Epitaxial wafer of light-emitting diode (LED) and making method of epitaxial wafer

A technology of light-emitting diodes and epitaxial wafers, applied in the field of diodes, can solve problems affecting internal quantum efficiency, energy band bending in quantum well regions, and strengthen the polarization of quantum well regions, so as to improve internal quantum efficiency and increase the probability of electron tunneling , Improve the effect of antistatic ability

Active Publication Date: 2012-10-31
HC SEMITEK ZHEJIANG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Each quantum barrier layer in the MQW layer of the existing epitaxial wafer is a single-layer structure, and the atoms in each layer are arranged neatly, and lattice mismatch will occur at the junction of the quantum barrier layer and the adjacent quan

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  • Epitaxial wafer of light-emitting diode (LED) and making method of epitaxial wafer
  • Epitaxial wafer of light-emitting diode (LED) and making method of epitaxial wafer

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Embodiment 1

[0021] See figure 1 The first embodiment of the present invention provides an epitaxial wafer of a light emitting diode, the epitaxial wafer includes a substrate layer 1, a buffer layer 2, an N-type layer 3, an MQW layer 4, and a P-type layer 5 sequentially covering the substrate layer 1. The N-type layer 3 is made of n-type doped GaN; the MQW layer 3 includes a number of quantum barrier layers 6 and a number of quantum well layers 7 grown alternately with each quantum barrier layer 6. Wherein, at least one quantum barrier layer 6 of the plurality of quantum barrier layers 6 includes three sub-quantum barrier layers; the sub-quantum barrier layer located in the middle of the three sub-quantum barrier layers is made of n-type doped Al x In y Ga 1-x-y Made of N, the n-type doping concentration is not greater than the n-type doping concentration of the N-type layer 3; the other two sub-quantum barrier layers are made of undoped GaN; where 0

[0022] The technical soluti...

Embodiment 2

[0024] The embodiment of the present invention provides an epitaxial wafer for a light emitting diode, which includes a substrate layer 1, a buffer layer 2, an N-type layer 3, an MQW layer 4, and a P-type layer 5 sequentially covering the substrate layer 1.

[0025] Specifically, the substrate layer 1 is a sapphire substrate.

[0026] Specifically, the buffer layer 2 is a composite layer, including a low-temperature buffer layer and an undoped GaN layer.

[0027] Specifically, the N-type layer 3 is made of n-type doped GaN. Preferably, the n-type doping is obtained by Si doping, and the doping concentration is 5×10 18 cm -3 .

[0028] Wherein, the MQW layer 3 includes a plurality of quantum barrier layers 6 and a plurality of quantum well layers 7 grown alternately with each quantum barrier layer 6. In addition, at least one quantum barrier layer 6 in all the quantum barrier layers 6 includes three sub-quantum barrier layers; the sub-quantum barrier layer located in the middle of the...

Embodiment 3

[0038] The third embodiment of the present invention provides a method for manufacturing an epitaxial wafer of a light-emitting diode. The method includes providing a substrate and sequentially growing a buffer layer, an N-type layer, and a MQW layer on the substrate. Quantum well layers and P-type layers in which each quantum barrier layer alternates with each other. Wherein, growing at least one quantum barrier layer in the plurality of quantum barrier layers includes:

[0039] Using undoped GaN, the quantum barrier layer is grown to the first thickness;

[0040] Use n-doped Al x In y Ga 1-x-y N is deposited with a predetermined doping concentration to grow the quantum barrier layer to a second thickness;

[0041] Using undoped GaN, the quantum barrier layer is grown to the third thickness;

[0042] Wherein, the predetermined doping concentration is not greater than the doping concentration of the N-type layer; 0

[0043] Further, the second thickness is 0-10 nm; the fir...

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Abstract

The invention discloses an epitaxial wafer of a light-emitting diode (LED) and the manufacturing method of the epitaxial wafer and belongs to the technical field of diodes. The epitaxial wafer comprises a substrate layer, a buffer layer, an N-type layer, a multiple quantum well (MQW) layer and a P-type layer, wherein the substrate layer, the buffer layer, the N-type layer, the MQW layer and the P-type layer are sequentially covered on the substrate layer; the N-type layer is made of n-type doped GaN; the MQW layer comprises a plurality of quantum barrier layers and a plurality of quantum well layers which alternately grow with the quantum barrier layers; at least one of the quantum barrier layers comprises three sub-quantum barrier layers; a sub-quantum barrier layer positioned in the middle of the three sub-quantum barrier layers is made of n-type doped AlxInyGa[1-x-y]N, and the n-type doping concentration of the sub-quantum barrier layer is not greater than that of the N-type layer; and the other two sub-quantum barrier layers are made of non-doped GaN, wherein x is more than 0 and less than 1, and y is more than 0 and less than 1. According to the technical scheme, the electrostatic resistance of the LED can be improved.

Description

Technical field [0001] The present invention relates to the field of diode technology, in particular to an epitaxial wafer of a light emitting diode and a manufacturing method thereof. Background technique [0002] The LED (Light Emitting Diode) chip is a semiconductor chip, which is the core component of the LED. The LED chip includes a GaN-based epitaxial wafer grown on a substrate and an electrode fabricated on the epitaxial wafer. [0003] Among them, the epitaxial wafer mainly includes an N-type layer, an MQW (Multiple Quantum Well) layer and a P-type layer. When current passes through the epitaxial wafer, electrons in the N-type layer and holes in the P-type layer recombine in the MQW layer, and then emit energy in the form of photons. Therefore, the MQW layer is also called the light-emitting layer. The MQW layer is a multilayer structure formed by alternate growth of two different thin layers of semiconductor materials. One thin layer of semiconductor material is a quan...

Claims

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Application Information

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IPC IPC(8): H01L33/06H01L33/32H01L33/00
Inventor 王明军魏世祯胡加辉
Owner HC SEMITEK ZHEJIANG CO LTD
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