Superlattice ferroelectric memristor based on HfO2/ZrO2 or HfO2/Al2O3 and preparation thereof

A technology of superlattice and memristor, applied in the field of ferroelectric memristor based on HfO2/ZrO2 or HfO2/Al2O3 superlattice and its preparation, can solve the problem of many internal defects in the film, increased device leakage current, dielectric constant Reduce the problem, achieve the effect of increasing the stability of ferroelectric performance, reducing leakage current, and optimizing ferroelectric performance

Pending Publication Date: 2022-02-08
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the low dielectric constant of elements such as Si and Al, the dielectric constant of the hafnium oxide film decreases, and different concentrations of doping cause more internal

Method used

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  • Superlattice ferroelectric memristor based on HfO2/ZrO2 or HfO2/Al2O3 and preparation thereof
  • Superlattice ferroelectric memristor based on HfO2/ZrO2 or HfO2/Al2O3 and preparation thereof
  • Superlattice ferroelectric memristor based on HfO2/ZrO2 or HfO2/Al2O3 and preparation thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0047] Embodiment 1: a kind of based on HfO 2 / ZrO 2 Preparation method of ferroelectric memristor with superlattice structure

[0048] Embodiment 1 provides HfO 2 / ZrO 2 The superlattice structure ferroelectric memristor, the device structure is TiN / ZrO 2 / HfO 2 / ZrO 2 / HfO 2 / ZrO 2 / HfO 2 / Pt, whose structure is as figure 1 As shown, 2nm thick HfO is preferred in this example 2 and 2nm thick ZrO 2 , a total of 6 floors. The lower electrode is made of Pt, and the upper electrode is made of TiN.

[0049] The HfO 2 / ZrO 2 Superlattice structure ferroelectric memristor preparation method; Concrete steps are as follows:

[0050] (1) The first step: substrate cleaning:

[0051] will be attached with SiO 2 The Si substrates were immersed in acetone and alcohol solutions and ultrasonically cleaned for 10 min, respectively. The samples were placed in plasma water and ultrasonically cleaned for 3 min.

[0052] (2) The second step: lower electrode preparation:

[00...

Example Embodiment

[0068] Example 2

[0069] Embodiment 2 is substantially similar to Embodiment 1, and the main difference is that in the third step, when the functional layer is plated by ALD, the processes of ③ and ④ are cycled 4 times to obtain HfO with a total thickness of 16nm. 2 / ZrO 2 superlattice functional layer. like Figure 4 Shown is the ferroelectric characteristic P-E curve of Example 2 when the triangular pulse frequency is 100 Hz and the amplitude is ±4 V. When the thickness of the superlattice film increases, the remanent polarization of Example 2 is 12.37uC / cm 2 .

Example Embodiment

[0070] Example 3

[0071] Embodiment 3 is substantially similar to Embodiment 1, and the main difference is that in the third step, when the functional layer is plated by ALD, the processes of ③ and ④ are cycled 5 times to obtain HfO with a total thickness of 20nm. 2 / ZrO 2 superlattice functional layer. like Figure 5 Shown is the cyclic ferroelectric characteristic P-E curve of Example 3 when the triangular pulse frequency is 100 Hz and the amplitude is ±4 V. When the thickness of the superlattice film increases, the remanent polarization of Example 3 is 6.58uC / cm 2 .

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Abstract

The invention belongs to the technical field of microelectronic devices, and discloses a superlattice ferroelectric memristor which comprises a lower electrode layer, a functional layer and an upper electrode layer which are sequentially stacked from bottom to top, wherein the functional layer is a superlattice functional layer composed of at least one superlattice unit. Each superlattice unit is formed by sequentially stacking a first functional material and a second functional material from bottom to top; the thickness of any sub-functional layer formed by the first functional material or the second functional material in the functional layer is 0.6-5nm; and the first functional material is HfO2, and the second functional material is ZrO2 or Al2O3. According to the invention, the structure and composition of the functional layer of the device are improved, the ferroelectric memristor is different from a traditional metal-doped HfO2-based ferroelectric memristor, the superlattice HfO2 layer and the ZrO2 layer (or the Al2O3 layer) are grown in a stacked mode to serve as the functional layer of the ferroelectric memristor, and the ferroelectric memristor has good ferroelectricity and memristor characteristics.

Description

technical field [0001] The invention belongs to the technical field of microelectronic devices, and more specifically, relates to an HfO-based 2 / ZrO 2 or HfO 2 / Al 2 o 3 Superlattice ferroelectric memristor and its preparation method, the superlattice thin film has the advantages of high dielectric constant, low interface trap charge and high thermal stability, which is beneficial to increase the ferroelectric phase content of the device thin film and promote the polarization reversal of the thin film And improve the ferroelectric performance of the device. At the same time, HfO 2 with ZrO 2 (or Al 2 o 3 ) There are oxygen vacancy defects and potential barriers between the sub-functional layers, which makes the device have excellent memristive properties at the same time. Background technique [0002] The advent of the post-Moore era is accompanied by the shrinking of component sizes gradually approaching the physical limit, resulting in an increase in device cost,...

Claims

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Application Information

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IPC IPC(8): H01L45/00C30B25/00C30B29/16C30B29/20C30B29/68
CPCC30B29/68C30B29/16C30B29/20C30B25/00H10N70/826H10N70/8833H10N70/011H10N70/026Y02D10/00
Inventor 孙华军白娜王文琳缪向水
Owner HUAZHONG UNIV OF SCI & TECH
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