Preparation method and application of ferroelectric film

A ferroelectric thin film and substrate electrode technology, applied in the field of ferroelectric thin film preparation, can solve the problems of poor compatibility, unfavorable environmental protection, difficult growth of PZT, etc., and achieve the effects of good compatibility, no cracks and low roughness

Inactive Publication Date: 2019-04-05
ZHONGBEI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, the commonly used ferroelectric material is PZT (piezoelectric ceramic transducer, lead zirconate titanate piezoelectric ceramic) with perovskite structure, bu

Method used

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  • Preparation method and application of ferroelectric film
  • Preparation method and application of ferroelectric film
  • Preparation method and application of ferroelectric film

Examples

Experimental program
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Example Embodiment

[0038] Example 1

[0039] A method for preparing a ferroelectric thin film, comprising the steps of:

[0040] Step 1: Preparation of hafnium-zirconium oxide precursor solution: Weigh hafnium acetylacetonate (1.38g, 2.40mmol) and zirconium acetylacetonate (4.68g, 9.60mmol) and mix well, add acetic acid and acetic anhydride mixed solution (30mL) , the mass ratio of acetic acid and acetic anhydride in the mixed solution of acetic acid and acetic anhydride is 3:1. The above mixture was placed in a helium atmosphere and heated to 150 ° C and continued to stir for 30 minutes to obtain a hafnium-zirconium oxide precursor solution (Hf 0.2 Zr 0.8 o 2 ).

[0041] Step 2: Coat the hafnium-zirconium oxide precursor solution on the titanium nitride electrode, then put it into a tube furnace, heat it to 350 °C at a speed of 10 °C / s, and dry and pyrolyze it for 10 minutes. furnace to obtain an amorphous film, and repeat the above operations until the desired film thickness of 150nm is r...

Example Embodiment

[0044] Example 2

[0045] Example 2 The modified form of Example 1 is implemented, and the difference from Example 1 is that in the second step, the hafnium-zirconium oxide precursor solution is coated on a silicon oxide wafer, and magnified by 20 times with a confocal microscope Photographs of the surface of the ferroelectric thin film were taken afterward to observe the compatibility between the ferroelectric thin film and silicon. In this embodiment, a group of comparative experiments were also done, in which the hafnium-zirconium oxygen precursor solution was replaced by the PZT precursor solution (Pb(Zr 0.8 Ti 0.2 )O 3 ), where the ratio of zirconium to titanium Zr:Ti is 8:2, and the photo of the surface of PZT film was taken after magnifying 20 times with a confocal microscope.

Example Embodiment

[0046] Example 3

[0047] A method for preparing a ferroelectric thin film, comprising the steps of:

[0048] Step 1: Preparation of hafnium-zirconium oxide precursor solution: Weigh hafnium acetylacetonate (3.45g, 6.00mmol) and zirconium acetylacetonate (2.93g, 6.00mmol) and mix well, add acetic acid and acetic anhydride mixed solution (30mL) , the mass ratio of acetic acid and acetic anhydride in the mixed solution of acetic acid and acetic anhydride is 3:1. The above mixture was placed in a helium atmosphere and heated to 150 ° C and continued to stir for 30 minutes to obtain a hafnium-zirconium oxide precursor solution (Hf 0.5 Zr 0.5 o 2 ).

[0049] Step 2: Coat the hafnium-zirconium oxide precursor solution on the titanium nitride electrode, then put it into a tube furnace, heat it to 350 °C at a speed of 10 °C / s, and dry and pyrolyze the tube for 10 minutes type furnace to obtain an amorphous film, and repeat the above operations until the desired film thickness of ...

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Abstract

The invention discloses a preparation method and application of a ferroelectric film. The preparation method includes preparing a hafnium zirconium oxygen precursor solution by taking hafnium acetylacetonate and zirconium acetylacetonate as raw materials while acetic acid and acetic anhydride as solvents, and subjecting the solution to coating, drying pyrolysis and high temperature annealing to obtain the ferroelectric film that is then applied to the structure of a capacitor. The ferroelectric film has a good crystal structure and the high ferroelectric property, has high compatibility with silicon, and grows on a silicon oxide wafer smoothly and densely, so that toxic lead or lead-containing materials are prevented from being used as raw materials, and environmental pollution is avoided.

Description

technical field [0001] The present application relates to the field of microelectronic devices, in particular to a preparation method and application of a ferroelectric thin film. Background technique [0002] The storage function is realized by utilizing the spontaneous polarization of the ferroelectric material, and the property that the spontaneous polarization vector can be reversed under the action of an external electric field. The main feature of ferroelectric materials is that they have ferroelectricity, and the direction of polarization can be adjusted by an external electric field. This characteristic makes it suitable for memory, the two states of its remnant polarization (external electric field strength is zero) correspond to the "0" and "1" states of the memory, and the memory can be changed by changing the direction of the external electric field. state or through peripheral circuits to sense its polarization state and read information. [0003] At present, ...

Claims

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Application Information

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IPC IPC(8): C04B35/48
CPCC04B35/48C04B35/62222C04B2235/3244C04B2235/6562
Inventor 丑修建耿文平张启程穆继亮侯晓娟何剑陈茜
Owner ZHONGBEI UNIV
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