38 results about "Strontium ruthenate" patented technology

A piezoelectric actuator comprising an optimum layer structure when (100) orientation strontium ruthenate is used as a bottom electrode is provided. This piezoelectric actuator comprises a diaphragm 30 that is constituted by (100) orientation yttria-stabilized zirconia, CeO2, or ZrO2, that is grown epitaxially on a (100) orientation Si substrate 20, a buffer layer 41 formed on the diaphragm and constituted by (001) orientation REBa2Cu3Ox, a bottom electrode 42 formed on the buffer layer and constituted by (100) orientation strontium ruthenate, a piezoelectric layer 43 formed on the bottom electrode and constituted by (100) orientation PZT, and a top electrode 44 formed on the piezoelectric layer.

Exemplary embodiments of the present invention provide a method of manufacturing a piezoelectric device that includes a piezoelectric layer having high crystallinity in which crystal orientation is aligned to a desired direction, a method of manufacturing a ferroelectric device that includes a ferroelectric layer having the similar high crystallinity, and so forth. Exemplary embodiments include an insulating layer composed of SiO2 and so forth and a buffer layer composed of strontium oxide (SrO) and so forth are formed on a substrate such as a silicon single crystal wafer in sequence, and then a lower electrode composed of strontium ruthenate (SRO) is formed on the buffer layer. By forming self-assembled monolayers on the lower electrode, high affinity regions A1 and low affinity regions A2 are formed. Then, piezoelectric layers are selectively formed only on the high affinity regions A1.

Disclosed in a semiconductor device comprising a semiconductor substrate, and a ferroelectric layer provided above the semiconductor substrate and sandwiched between a lower electrode and an upper electrode, the lower electrode comprising a strontium ruthenate film having a thickness of 2 nm or less.

The invention discloses a method for preparing a flexible epitaxial ferroelectric thin film, which is characterized in that it comprises the following steps: 1) preparing a perovskite structure oxide strontium ruthenate bottom electrode by a laser pulse deposition method; 2) using a sol-gel method Preparing a precursor solution for a ferroelectric thin film, wherein the concentration of the precursor solution is 0.1 to 0.5 mol / L, and the ferroelectric thin film material is selected from any one of lead zirconate titanate, barium titanate or bismuth ferrite; 3) The preparation of the flexible epitaxial ferroelectric thin film is to spin-coat the precursor solution on the above-mentioned strontium ruthenate bottom electrode by spin-coating method to obtain a uniform wet film; 4) dry, pyrolyze and anneal the uniform wet film prepared above; 5) Repeat steps 3)-4) 3 to 8 times to obtain the target flexible epitaxial ferroelectric film, and the thickness of the film is 100 nm to 300 nm. The invention provides a method for preparing a flexible epitaxial thin film with simple process and excellent ferroelectric performance.

Apparatus and method for generating ruthenium tetraoxide in situ for use in vapor deposition, e.g., atomic layer deposition (ALD), of ruthenium-containing films on microelectronic device substrates. The ruthenium tetraoxide can be generated on demand by reaction of ruthenium or ruthenium dioxide with an oxic gas such as oxygen or ozone. In one implementation, ruthenium tetraoxide thus generated is utilized with a strontium organometallic precursor for atomic layer deposition of strontium ruthenate films of extremely high smoothness and purity.

The object of the present invention is to provide a kind of lead zirconate titanate / strontium ruthenate ferroelectric superlattice material and preparation method thereof, this material is made of periodically grown ferroelectric material lead zirconate titanate and metal conductive oxide material ruthenium Composed of strontium oxide. The advantages of the lead zirconate titanate / strontium ruthenate ferroelectric superlattice material of the present invention are: the dielectric constant is increased by 2 to 10 times compared with the pure PZT film; and it has good ferroelectric polarization performance, and its saturation polarization value Higher than pure PZT film, it can reach 80μC / cm2. The preparation method of the material is to alternately grow strontium ruthenate and lead zirconate titanate on a single crystal substrate by pulsed laser deposition, and precisely regulate the periodic thickness of the superlattice by controlling the time of laser bombardment of different targets. The ferroelectric superlattice material has broad application prospects in integrated ferroelectric devices such as sensors and memories.

The invention relates to a method for preparing a strontium ruthenate target. A high-density SRO (SrRuO3) ceramic target is prepared by a low-temperature presintering and high-temperature pressure sintering two-step method, and has the density which is 86 to 88 percent of theoretical density. The SRO ceramic target prepared by the method can be applied to processes such as sputtering, molecular beam epitaxy, pulsed laser deposition and the like to form an SRO film, and has the characteristics that: 1) a low temperature and short time are adopted in the process of pressing and presintering a raw material, so that the prepared precursor has low crystallinity, high activity and a small particle size; and 2) a preset sheet is directly heated and pressurized at the same position to be subjected to high-temperature hot pressed sintering after glue is discharged and stress is released, so that a dense and well formed target is obtained.

The invention relates to a zinc oxide / strontium ruthenate core-shell nanowire and a preparation method thereof. The zinc oxide / strontium ruthenate core-shell nanowire comprises a zinc oxide nanowire layer constituted by a zinc oxide nanowire growing vertically and a strontium ruthenate film covered on the zinc oxide nanowire layer.

The invention herein is directed towards a method of making material exhibiting superconductivity characteristics which includes a laser processed region of a metal oxide crystal. The material has a transition temperature greater than a transition temperature of the metal oxide crystal, preferably greater than 140K. The transition temperature of the material may be considered greater than the transition temperature of the metal oxide crystal if the material has a transition temperature and the metal oxide crystal has no transition temperature. The present invention is also directed to a material which includes a laser processed strontium ruthenate crystal wherein the material has a greater oxygen content than the starting strontium ruthenate crystal. The present invention is also directed towards a method for manufacturing a material exhibiting superconductivity characteristics that includes providing a metal oxide crystal and laser ablating the metal oxide crystal and a material made by this process.

The invention provides a strontium ruthenate / lanthanum strontium manganese transition metal oxide heterojunction and a preparation method thereof, wherein the thickness of the strontium ruthenate / lanthanum strontium manganese transition metal oxide heterojunction is 30-60 nm , which includes a strontium ruthenate film and a lanthanum strontium manganese oxide film, the molar ratio of each component in the lanthanum strontium manganese oxide film La:Sr:Mn:O=1-x:x:1:3, 0≤x≤1 ; The strontium ruthenate / lanthanum strontium manganese oxide transition metal oxide heterojunction is prepared by pulsed laser deposition. The preparation process of the strontium ruthenate / lanthanum strontium manganese oxide transition metal oxide heterojunction is simple and the production cost is low, and the strontium ruthenate / lanthanum strontium oxide can be accurately and effectively regulated by changing the doping content of Sr element in the lanthanum strontium manganese oxide thin film The lateral and vertical exchange bias directions and values ​​of manganese-oxygen transition metal oxide heterojunctions have broad application prospects.