38 results about "Strontium ruthenate" patented technology

Apparatus and method for generating ruthenium tetraoxide in situ for use in vapor deposition, e.g., atomic layer deposition (ALD), of ruthenium-containing films on microelectronic device substrates. The ruthenium tetraoxide can be generated on demand by reaction of ruthenium or ruthenium dioxide with an oxic gas such as oxygen or ozone. In one implementation, ruthenium tetraoxide thus generated is utilized with a strontium organometallic precursor for atomic layer deposition of strontium ruthenate films of extremely high smoothness and purity.

Disclosed in a semiconductor device comprising a semiconductor substrate, and a ferroelectric layer provided above the semiconductor substrate and sandwiched between a lower electrode and an upper electrode, the lower electrode comprising a strontium ruthenate film having a thickness of 2 nm or less.

It is an object of the present invention to provide a piezoelectric actuator which uses strontium ruthenate as the material of the bottom electrode, and which uses PMN-PT as the material of the piezoelectric layer. This piezoelectric actuator comprises a base layer (31, 20) of SiO₂ or Si ((100) orientation or (110) orientation), a buffer layer (41) constituted by strontium ruthenate (SRO), and a piezoelectric layer (44) constituted by a relaxor dielectric (PMN-PT) with a rhombohedral or quasi-cubic crystal structure oriented in the (001) direction at room temperature.

The objective of the invention is to provide lead zirconate titanate/ruthenium acid strontium ferroelectric superlattice material and a preparation method thereof. The material is formed by periodically grown ferroelectric material lead zirconate titanate and metallically conductive oxide material ruthenium acid strontium. The advantages of the lead zirconate titanate/ruthenium acid strontium ferroelectric superlattice material are that the dielectric constant is increased for 2-10 times than that of a pure PZT film; and the material has great ferroelectric polarization performance, and its saturated polarization value is higher than that of the pure PZT film and can be 80muC/cm2. The preparation method of the material is that ruthenium acid strontium and lead zirconate titanate are alternately grown on a monocrystal substrate by using a pulse laser deposition method, and the periodic thickness of the superlattice is accurately regulated and controlled by controlling bombardment time of laser for different target material. The ferroelectric superlattice material has wide application prospect in sensors, storage devices and other integrated ferroelectric devices.

The invention relates to a zinc oxide/strontium ruthenate core-shell nanowire and a preparation method thereof. The zinc oxide/strontium ruthenate core-shell nanowire comprises a zinc oxide nanowire layer constituted by a zinc oxide nanowire growing vertically and a strontium ruthenate film covered on the zinc oxide nanowire layer.

The invention discloses a preparation method of a flexible BNT (Bi(4-x)NdxTi3O12) ferroelectric-thin-film. The method includes the following steps: 1) using a laser pulse deposition method to preparea strontium ruthenate bottom electrode on a muscovite-mica substrate; 2) adopting a sol-gel method to prepare a precursor solution of the BNT ferroelectric-thin-film, wherein concentration of the precursor solution is 0.05-0.1mol/L; 3) adopting a spin coating method to carry out spin coating of the BNT precursor solution on the above-mentioned strontium ruthenate bottom electrode to obtain a uniform wet film; 4) drying, pyrolyzing and annealing the above-mentioned uniform wet film obtained by preparation; and (5) repeating the step 3)-the step 4) for 4-6 times to obtain the flexible BNT ferroelectric-thin-film, wherein thickness of the thin film is in a range of 200nm-300nm.The method provides a flexible BNT ferroelectric-thin-film material of simple technology and excellent ferroelectricperformance.

The invention relates to a method for preparing a strontium ruthenate target. A high-density SRO (SrRuO3) ceramic target is prepared by a low-temperature presintering and high-temperature pressure sintering two-step method, and has the density which is 86 to 88 percent of theoretical density. The SRO ceramic target prepared by the method can be applied to processes such as sputtering, molecular beam epitaxy, pulsed laser deposition and the like to form an SRO film, and has the characteristics that: 1) a low temperature and short time are adopted in the process of pressing and presintering a raw material, so that the prepared precursor has low crystallinity, high activity and a small particle size; and 2) a preset sheet is directly heated and pressurized at the same position to be subjected to high-temperature hot pressed sintering after glue is discharged and stress is released, so that a dense and well formed target is obtained.

The invention provides a barium titanate-strontium titanate nano composite film material and a preparation method thereof. The material comprises the components of, in volume ratio, 2%-9% of SrRuO3, 91%-98% of BaTiO3, and the material microstructure is characterized in that SrRuO3 nano particles are uniformly distributed on a BaTiO3 matrix. The barium titanate-strontium titanate nano composite film material has the advantages that the dielectric constant increases by 10%-24% compared with a pure barium titanate film; the material has good ferroelectric polarization performance, the remanent polarization intensity of the material reaches 40.3 microcoulomb/cm<2>, saturated polarization strength reaches 47. 8 microcoulomb/cm<2>, and compared with the barium titanate film, the remanent polarization intensity increases by 950%, and the saturated polarization intensity increase by 140%; and as a lead-free ferroelectric material, a composite film has a wide application prospect in integratedferroelectric devices such as a ferroelectric random access memory, a film capacitor, a sensor, an actuator.

The invention aims to provide a strontium titanate/strontium ruthenate ferroelectric superlattice film material and a preparation method thereof. The material is composed of periodically grown quantumparaelectric insulator strontium titanate and metal conductive oxide strontium ruthenate. The strontium titanate/strontium ruthenate ferroelectric superlattice film material is a high-performance lead-free ferroelectric material, and the residual polarization strength of the high-performance lead-free ferroelectric material reaches 33.0 [mu]C/cm<2>, is 750% higher than that of a traditional lead-free ferroelectric material barium titanate film, and is as excellent as that of a lead zirconate titanate (Pb(ZrxTil-x)O3) lead-based ferroelectric film material that is commonly used at the present.According to the preparation method of the material, strontium ruthenate and strontium titanate are alternately grown on a single crystal substrate through a pulse laser deposition method, and the period thicknesses of a superlattice is accurately adjusted and controlled by controlling the time of laser ablation on different targets. The strontium titanate/strontium ruthenate ferroelectric superlattice film material can be used as the high-performance lead-free ferroelectric material to replace the Pb(ZrxTil-x)O3 lead-based ferroelectric film and has broad application prospects in integratedferroelectric devices such as ferroelectric memories, sensors and actuators.

The invention discloses an amorphous strontium ruthenate film composite electrode, a preparation method and application thereof. The preparation method comprises the following steps: fully grinding a glassy carbon substrate by using aluminum oxide polishing powder, cleaning by using ultrasonic waves, and blow-drying by using inert gas; and fixing on a sample table of a pulse laser deposition system, pre-burning strontium ruthenate serving as a target material under the conditions of constant oxygen partial pressure and constant laser energy density, then taking down a baffle plate for deposition, and taking out a sample in a nitrogen atmosphere to obtain the strontium ruthenate film composite electrode. According to the invention, amorphous strontium ruthenate is deposited and grown on a glassy carbon substrate through laser pulses, so that the obtained electrode material is high in binding force and good in stability; when the amorphous strontium ruthenate film composite electrode is applied to an electrocatalytic water electrolysis oxygen evolution reaction system, the water electrolysis oxygen evolution reaction can be effectively catalyzed and promoted; and the results show that the amorphous structure engineering can become an effective and general strategy for designing a high-performance catalyst applied to the next generation of electrolysis water oxygen evolution reaction.

The invention relates to a method for preparing a strontium ruthenate film with highly (001) preferred orientation at a low temperature. A silicon chip is used as a substrate; and after a LaNiO3 buffer layer is introduced, a SrRuO3 target is sputtered at 400-600 DEG C to obtain the SrRuO3 with highly (001) preferred orientation.

The invention relates to strontium ruthenate nanoparticle composite silver paste and a preparation method thereof, belongs to the technical field of conductive silver paste, and aims at solving the technical problem of providing the strontium ruthenate nanoparticle composite silver paste. The strontium ruthenate nanoparticle composite silver paste is prepared from the following components in parts by weight: 72-84 parts of silver/strontium ruthenate complex, 3-15 parts of silver-coated glass powder, 10-33 parts of organic carriers and 0-3 parts of inorganic additives. Compared with existing conductive silver paste, the strontium ruthenate nanoparticle composite silver paste provided by the invention has better electrical property and better stability.

The invention provides a multiferroic heterojunction, sequentially comprising a strontium titanate substrate, a strontium ruthenate bottom electrode layer, a barium titanate ferroelectric layer and aferroferric oxide magnetic nano-column array from bottom to top. According to the scheme of the invention, barium titanate is used as the ferroelectric layer and ferroferric oxide is used as the magnetic nano-column array, so that the formed multiferroic heterojunction has excellent ferroelectric and ferromagnetic properties; ferroferric oxide can not only regulate and control the magnetic properties through ion movement, but also can be used as an electrode during flipping ferroelectric polarization; and the process of adopting an electric field to control the magnetization orientation at room temperature in a stable, reversible and nonvolatile mode can be achieved, and the scheme is beneficial to the development of memories and spin-electronic devices in the future, and lays a foundationfor realizing ultra-fast data storage and processing with high density and low power consumption.

The invention discloses a strontium ruthenate material, and a preparation method and application thereof, and belongs to the technical field of strontium ruthenate materials. The preparation method comprises the following steps: performing vacuum hot pressing sintering on raw materials for preparing the strontium ruthenate material, wherein the vacuum hot pressing sintering conditions are as follows: the vacuum degree is less than or equal to 10<-3> Pa, the hot pressing temperature is 600-850 DEG C, the hot pressing pressure is 58.5-100MPa, and the hot pressing time is 3-3.5 h. Vacuum hot pressed sintering is carried out under the conditions, and the strontium ruthenate material with high density, high purity and strict atomic proportion can be prepared. The strontium ruthenate material can be used for processing sputtering target materials and the like, and in the sputtering process, particle defects are reduced, and the product quality is improved.