38 results about "Strontium ruthenate" patented technology

Disclosed in a semiconductor device comprising a semiconductor substrate, and a ferroelectric layer provided above the semiconductor substrate and sandwiched between a lower electrode and an upper electrode, the lower electrode comprising a strontium ruthenate film having a thickness of 2 nm or less.

The invention discloses a method for preparing a flexible epitaxial ferroelectric thin film, which is characterized in that it comprises the following steps: 1) preparing a perovskite structure oxide strontium ruthenate bottom electrode by a laser pulse deposition method; 2) using a sol-gel method Preparing a precursor solution for a ferroelectric thin film, wherein the concentration of the precursor solution is 0.1 to 0.5 mol / L, and the ferroelectric thin film material is selected from any one of lead zirconate titanate, barium titanate or bismuth ferrite; 3) The preparation of the flexible epitaxial ferroelectric thin film is to spin-coat the precursor solution on the above-mentioned strontium ruthenate bottom electrode by spin-coating method to obtain a uniform wet film; 4) dry, pyrolyze and anneal the uniform wet film prepared above; 5) Repeat steps 3)-4) 3 to 8 times to obtain the target flexible epitaxial ferroelectric film, and the thickness of the film is 100 nm to 300 nm. The invention provides a method for preparing a flexible epitaxial thin film with simple process and excellent ferroelectric performance.

The object of the present invention is to provide a kind of lead zirconate titanate / strontium ruthenate ferroelectric superlattice material and preparation method thereof, this material is made of periodically grown ferroelectric material lead zirconate titanate and metal conductive oxide material ruthenium Composed of strontium oxide. The advantages of the lead zirconate titanate / strontium ruthenate ferroelectric superlattice material of the present invention are: the dielectric constant is increased by 2 to 10 times compared with the pure PZT film; and it has good ferroelectric polarization performance, and its saturation polarization value Higher than pure PZT film, it can reach 80μC / cm2. The preparation method of the material is to alternately grow strontium ruthenate and lead zirconate titanate on a single crystal substrate by pulsed laser deposition, and precisely regulate the periodic thickness of the superlattice by controlling the time of laser bombardment of different targets. The ferroelectric superlattice material has broad application prospects in integrated ferroelectric devices such as sensors and memories.

The invention herein is directed towards a method of making material exhibiting superconductivity characteristics which includes a laser processed region of a metal oxide crystal. The material has a transition temperature greater than a transition temperature of the metal oxide crystal, preferably greater than 140K. The transition temperature of the material may be considered greater than the transition temperature of the metal oxide crystal if the material has a transition temperature and the metal oxide crystal has no transition temperature. The present invention is also directed to a material which includes a laser processed strontium ruthenate crystal wherein the material has a greater oxygen content than the starting strontium ruthenate crystal. The present invention is also directed towards a method for manufacturing a material exhibiting superconductivity characteristics that includes providing a metal oxide crystal and laser ablating the metal oxide crystal and a material made by this process.