5 results about "Strontium ruthenate" patented technology

Technologies for a field effect transistor (FET) with a ferroelectric gate dielectric are disclosed. In an illustrative embodiment, a transistor includes a gate of strontium ruthenate and a ferroelectric gate dielectric layer of barium titanate. In order to prevent migration of ruthenium from the strontium ruthenate to the barium titanate, a barrier layer is placed between the gate and the ferroelectric gate dielectric layer. The barrier layer may be a metal oxide, such as strontium oxide, barium oxide, zirconium oxide, etc.

The application discloses a magnetoelectric heterojunction film and a preparation method thereof. The magnetoelectric heterojunction film comprises a strontium titanate base layer, a strontium ruthenate electrode layer, a bismuth ferrite ferroelectric material layer and a SmCo-based ferromagnetic material layer which are stacked in sequence. The magnetoelectric heterojunction film has the multi-ferroelectric layer room-temperature magnetoelectric coupling effect and the excellent magnetic performance of the ferromagnetic layer, and the magnetoelectric coupling effect of the heterojunction film can be enhanced through the strong exchange bias effect at the interface.

The invention discloses a double-ferroelectric enhanced ferroelectric field effect transistor and a preparation method and application thereof, and belongs to the technical field of inorganic semiconductor nanomaterials. According to the invention, a ferroelectric field effect transistor electronic device based on strontium ruthenate / bismuth ferrite / hafnium oxide / diindium triselenide is prepared, wherein strontium ruthenate is used as a grid electrode, bismuth ferrite is used as a ferroelectric dielectric layer, hafnium oxide is used as a buffer layer, diindium triselenide is used as a ferroelectric semiconductor channel, and chromium and gold are used as source and drain electrode materials. The dual-ferroelectric field effect transistor prepared by the invention mainly aims to enhance the ferroelectric retention performance of the ferroelectric field effect transistor by utilizing the mutual coupling effect between ferroelectric polarization of the channel material diindium triselenide and ferroelectric polarization of the dielectric material bismuth ferrite and improve the nonvolatile storage capacity. Compared with a single ferroelectric field effect crystal, the double ferroelectric field effect transistor prepared by the invention can have longer ferroelectric retention time.

Disclosed in the present invention are an organism and a method for promoting the directional growth thereof. The organism comprises at least one of a single cell, a multicellular body, a tissue and an organoid. The method comprises the step of subjecting the organism to a strong-to-weak gradient electric field environment. In the present invention, a layered material is constructed using strontium titanate as a substrate, strontium ruthenate as a regulating layer, and bismuth ferrite as an internal electric domain polarization layer. A surface potential, i.e., a gradient electric field, is generated by the layered material so as to guide the directional growth of the organism in vitro, thereby constructing an organoid that highly mimics the morphology, structure and function of a corresponding tissue in vivo.

The present invention provides a preferentially orientated electrode film and preparation methods thereof, relating to the technical field of thin film preparation, comprising a silicon-based substrate and a primary seed layer, a secondary seed layer and a bottom electrode layer grown sequentially on said substrate; said primary seed layer being an AxB1-xN film or an A3-xB1-xN film, wherein A═Cu, Fe; B═Pd, Pt; Ox1; in which said secondary seed layer is made of one or more of the following films: chromium nitride film, titanium nitride film, tantalum nitride film, magnesium oxide film; and said bottom electrode layer is made of one or more of the following films: a platinum film, a titanium nitride film, a gold film, a strontium ruthenate film, or a niobium doped strontium titanate film, which has a preferential orientation in the (00 / ) crystallographic direction, to solve the problem that the existing films with (00 / ) preferential orientations are not obtainable on a Silicon based substrate.