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Barium zirconate titanate film annealing method based on radio frequency magnetron sputtering

A technology of radio frequency magnetron sputtering and barium zirconate titanate, which is applied in the direction of sputtering coating, ion implantation coating, coating, etc., can solve the problems of material structure and performance, magnetic properties, residual stress, etc., and achieve iron Improved electrical properties, increased strength, and improved crystallinity

Pending Publication Date: 2021-08-06
NANJING UNIV OF POSTS & TELECOMM
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the process of thin film preparation, a large amount of residual stress and defects will be introduced into the sample, which will have adverse effects on the structure and properties of the material, especially the magnetic properties.

Method used

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  • Barium zirconate titanate film annealing method based on radio frequency magnetron sputtering
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  • Barium zirconate titanate film annealing method based on radio frequency magnetron sputtering

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Embodiment Construction

[0027] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention.

[0028] In describing the present invention, it should be understood that the terms "upper", "lower", "front", "rear", "left", "right", "top", "bottom", "inner", " The orientation or positional relationship indicated by "outside", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, so as to Specific orientation configurations and operations, therefore, are not to be construed as limitations on the invention.

[0029] refer to Figure ...

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Abstract

The invention discloses a barium zirconate titanate film annealing method based on radio frequency magnetron sputtering, and belongs to the technical field of barium zirconate titanate preparation. Strontium titanate is used as a matrix, a strontium ruthenate material is sputtered to be used as a substrate, the substrate is sputtered to the surface of the matrix by using a magnetron sputtering technology, and then a barium zirconate titanate target material is used for sputtering a barium zirconate titanate material to be plated on the surface, wherein the zirconium content in the barium zirconate titanate target material is 20 mol.%. In the strontium ruthenate electrode deposition process, mixed atmosphere sputtering is adopted to obtain a film, in the barium zirconate titanate film deposition process, mixed atmosphere sputtering is adopted to obtain the film with the thickness of 280 nm, after sputtering is finished, a sample is subjected to heat preservation treatment, and then part of the sample is taken out to be subjected to annealing treatment. By means of the annealing process, the intensity of the diffraction peak of the barium zirconate titanate film is effectively enhanced, the crystallinity of the barium zirconate titanate film is improved, then the quality of the film is improved, and the ferroelectric performance of the film is obviously improved.

Description

technical field [0001] The invention belongs to the technical field of barium zirconate titanate preparation, and in particular relates to an annealing method of barium zirconate titanate thin film based on radio frequency magnetron sputtering. Background technique [0002] The application of ferroelectric thin films began in the 1960s and 1970s. At that time, ferroelectric thin films were mainly used to make non-volatile ferroelectric memories. However, due to the limitation of the preparation process, the research and application of ferroelectric thin films were not ideal. Until 1987, Eaton et al. successfully integrated ferroelectric thin films onto Si-based complementary metal oxide semiconductors (CMOS), marking the rise of integrated ferroelectrics. Since then, ferroelectric thin films have been widely used in the field of microelectronic machinery (MEMS). Today, ferroelectric thin films have been widely used. Ferroelectric thin films are widely used in non-volatile ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/58H01L21/477C23C14/08C23C14/35C23C14/46
CPCC23C14/5806C23C14/35C23C14/46C23C14/088H01L21/477
Inventor 宫代丽成宏卜张伟胡芳仁张雪花
Owner NANJING UNIV OF POSTS & TELECOMM
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