Strontium titanate/strontium ruthenate ferroelectric superlattice film material and preparation method thereof

A thin-film material, superlattice technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve problems such as no practical value, and achieve the effect of broad application prospects

Pending Publication Date: 2020-01-03
SHENYANG POLYTECHNIC UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, by these methods in SrTiO 3 The ferroelectricity induced above is very sm

Method used

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  • Strontium titanate/strontium ruthenate ferroelectric superlattice film material and preparation method thereof
  • Strontium titanate/strontium ruthenate ferroelectric superlattice film material and preparation method thereof
  • Strontium titanate/strontium ruthenate ferroelectric superlattice film material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] STO-25 / SRO-1 ferroelectric superlattice material

[0033] (1) Nb-SrTiO 3 (001) The substrate was cleaned with acetone and ethanol for 10 minutes respectively, then placed in the deposition chamber, heated to 750° C. in vacuum, and kept for 30 minutes;

[0034] (2) Under the conditions of a deposition temperature of 650°C and an oxygen pressure of 20Pa, the strontium ruthenate target was bombarded with a pulsed laser, so that the Nb-SrTiO 3 A strontium ruthenate layer with a thickness of 1 unit cell is deposited on the (001) substrate. Then convert the target to strontium titanate, and deposit a strontium titanate layer with a thickness of 25 unit cells on the strontium ruthenate layer;

[0035] (3) Repeat the process of (2) 25 times to prepare the STO-25 / SRO-1 ferroelectric superlattice thin film material.

[0036] (4) Before the electrical performance test, the surface of the ferroelectric superlattice film obtained by magnetron sputtering is coated with an area of ...

Embodiment 2

[0039] STO-25 / SRO-2 Ferroelectric Superlattice Materials

[0040] (1) Nb-SrTiO 3 (001) The substrate was cleaned with acetone and ethanol for 10 minutes respectively, then placed in the deposition chamber, heated to 750° C. in vacuum, and kept for 30 minutes;

[0041] (2) Under the conditions of a deposition temperature of 650°C and an oxygen pressure of 20Pa, the strontium ruthenate target was bombarded with a pulsed laser, so that the Nb-SrTiO 3 A strontium ruthenate layer with a thickness of 2 unit cells was deposited on the (001) substrate. Then bombard the strontium titanate target with a pulsed laser, and deposit a strontium titanate layer with a thickness of 25 unit cells on the strontium ruthenate layer;

[0042] (3) Repeat the process of (2) 24 times to prepare the STO-25 / SRO-2 ferroelectric superlattice thin film material.

[0043] (4) Before the electrical performance test, the surface of the ferroelectric superlattice film obtained by magnetron sputtering is coa...

Embodiment 3

[0046] STO-18 / SRO-1 Ferroelectric Superlattice Materials

[0047] (1) Nb-SrTiO 3 (001) The substrate was cleaned with acetone and ethanol for 10 minutes respectively, then placed in the deposition chamber, heated to 750° C. in vacuum, and kept for 30 minutes;

[0048] (2) Under the conditions of a deposition temperature of 650°C and an oxygen pressure of 20Pa, the strontium ruthenate target was bombarded with a pulsed laser, so that the Nb-SrTiO 3 A strontium ruthenate layer with a thickness of 1 unit cell is deposited on the (001) substrate. Then use a pulsed laser to bombard the strontium titanate target, and deposit a strontium titanate layer with a thickness of 18 unit cells on the strontium ruthenate layer;

[0049] (3) Repeat the process of (2) 33 times to prepare the STO-18 / SRO-1 ferroelectric superlattice thin film material.

[0050] (4) Before the electrical performance test, the surface of the ferroelectric superlattice film obtained by magnetron sputtering is coa...

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Abstract

The invention aims to provide a strontium titanate/strontium ruthenate ferroelectric superlattice film material and a preparation method thereof. The material is composed of periodically grown quantumparaelectric insulator strontium titanate and metal conductive oxide strontium ruthenate. The strontium titanate/strontium ruthenate ferroelectric superlattice film material is a high-performance lead-free ferroelectric material, and the residual polarization strength of the high-performance lead-free ferroelectric material reaches 33.0 [mu]C/cm<2>, is 750% higher than that of a traditional lead-free ferroelectric material barium titanate film, and is as excellent as that of a lead zirconate titanate (Pb(ZrxTil-x)O3) lead-based ferroelectric film material that is commonly used at the present.According to the preparation method of the material, strontium ruthenate and strontium titanate are alternately grown on a single crystal substrate through a pulse laser deposition method, and the period thicknesses of a superlattice is accurately adjusted and controlled by controlling the time of laser ablation on different targets. The strontium titanate/strontium ruthenate ferroelectric superlattice film material can be used as the high-performance lead-free ferroelectric material to replace the Pb(ZrxTil-x)O3 lead-based ferroelectric film and has broad application prospects in integratedferroelectric devices such as ferroelectric memories, sensors and actuators.

Description

technical field [0001] The invention belongs to the fields of electronic information materials, functional materials and intelligent materials, and specifically relates to a strontium titanate / strontium ruthenate ferroelectric superlattice film material and a preparation method thereof. Background technique [0002] Ferroelectric thin film is an important class of electronic information materials, functional materials and smart materials. Due to its excellent ferroelectricity, piezoelectricity, pyroelectricity, dielectricity and other important characteristics, it can be used to make ferroelectric RAM , Sensors, actuators, crystal field effect transistors, surface acoustic wave devices, pyroelectric detectors and other microelectronic components. At present, the commonly used ferroelectric material is lead zirconate titanate (Pb(Zr x Ti 1-x )O 3 , PZT for short) is the representative lead-based oxide ceramic material. Because lead-based ferroelectric materials contain a ...

Claims

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Application Information

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IPC IPC(8): C23C14/28C23C14/08
CPCC23C14/088C23C14/28
Inventor 王占杰
Owner SHENYANG POLYTECHNIC UNIV
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