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395 results about "Zinc oxide nanowire" patented technology

Semiconducting zinc oxide (ZnO) nanowire is doped (P-doped) silicon substrate (1.5–4.0 × 1016 cm−3 ) that is another one-dimensional nano-material that has been utilized in covered by a 40 nm SiO2 layer formed by thermal oxidization.

Nano generator, nano generator set and self-powered system comprising nano generator or nano generator set

The invention provides a nano generator, a nano generator set and a self-powered system comprising the nano generator or the nano generator set. The nano generator comprises a supporting substrate, and upper and lower electrodes which are arranged at two sides of upper and lower surfaces of the supporting substrate by glue, wherein each electrode respectively comprises a zinc oxide nanowire array layer, a macromolecular insulating layer and a conductive thin film; the zinc oxide nanowire array layers vertically grow on the supporting substrate; the macromolecular insulating layers are coated on the zinc oxide nanowire array layers; the conductive thin films are arranged on the macromolecular insulating layers; and the conductive thin films form output electrodes of voltage and current of the nano generator. The self-powered system can obtain energy from very small force in an environment through utilizing the nano generator and can store most of the energy when a sensor is at a standby mode; the collected energy is used for triggering the sensor under an active mode to rapidly process and transmit data; and therefore, the self-powered system has huge potentials of application on the aspects of radio biological sensing, environment/infrastructure monitoring, sensor networks, individual electronic products, even national security.
Owner:NEWNAGY TANGSHAN

Direct vertical deposition method of zinc oxide nanometer rod array on titanium dioxide film

The invention discloses a direct vertical deposition method of a zinc oxide nanometer rod array on a titanium dioxide film, wherein the zinc oxide is an important inorganic semiconductor function material and arouses wide public concern due to the unique performances of catalysis, electricity, optics and photochemistry, and the like. Persons are interested in the control synthesis of one-dimensional zinc oxide due to the remarkable laser behavior of the one-dimensional zinc oxide. The method comprises the steps of: preparing titanium dioxide sol under room temperature; preprocessing; adhering with one layer of titanium dioxide sol on a preprocessed glass or an electric glass ITO by means of dipping and pulling; preprocessing titanium dioxide grains before drying and spinning; fixing a layer of titanium dioxide grains prepared by means of a sol-hydrothermal method on the substrate by means of spinning; drying; roasting to obtain the nanometer zinc oxide film; putting the zinc oxide film into a sealed water solution system of zinc salt and organic amine; reacting for 12-72 h under the reaction temperature of 45-90 DEG C; taking out; washing with secondary water; and drying. The invention relates to a nanometer material.
Owner:HEILONGJIANG UNIV

Nanophase doped bismuth telluride-based thermoelectric material and preparation method thereof

The invention discloses a nanophase doped bismuth telluride-based thermoelectric material and a preparation method thereof. The bismuth telluride-based thermoelectric material is characterized in taking the bismuth telluride-based thermoelectric material containing a tellurium element, a bismuth element and a doped chemical element, as a matrix. The doped nanophase is a one-dimensional nanophase,and the weight of the one-dimensional nanophase accounts for 0.01-5 percent of the weight of the matrix. Attapulgite or a zinc oxide nanowire or a single-wall carbon nanotube or a multi-wall carbon nanotube is preferable to the one-dimensional nanophase. Compared with the prior art, in the bismuth telluride-based thermoelectric material, the lattice heat conductivity within the whole temperature zone range is reduced, thereby a ZT value is greatly improved and the thermoelectric performance of the bismuth telluride-based thermoelectric material is improved. The preparation method is simple and easy to implement, and compared with other methods of balling milling or liquid phase and the like, impurities are not easy to introduce in the preparation method so that the one-dimensional nanophase is evenly staggered and distributed in the matrix and the mechanical property of the material is effectively improved.
Owner:NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI

Method for growing nanometer zinc oxide structure through low-temperature heating of zinc and catalyst and application thereof

The invention provides a method for growing a nanometer zinc oxide structure through the low-temperature heating of zinc and a catalyst and application thereof. The method comprises the following steps (1) cleaning an underlayer to remove impurities on the underlayer; (2) depositing a zinc layer on the underlayer; if the positioning growth is needed, preparing the zinc layer on the surface of the underlayer by a screen printing method, a spin-coating photolithography method or other positioning deposition methods in a positioning mode; (3) preparing a catalyst layer on the zinc layer; and (4) heating the underlayer to a temperature of more than 250 DEG C in an oxygenous atmosphere at a speed of temperature rise of between 2 and 50 DEG C per minute; and keeping the underlayer for 10 minutes to 5 hours at the set temperature; and finally cooling the underlayer. As the zinc and the catalyst can be accurately positioned and placed in advance, the method is conveniently applied to the accurate positioning preparation of a zinc oxide nanowire and a nanometer sharp needle array. As the temperature can be lower than 650 DEG C, the preparation can be carried out on glass and other underlayers to realize the zinc oxide nanowire and the nanometer sharp needle array with low-cost preparation and large-dimension accurate positioning.
Owner:SUN YAT SEN UNIV

ZnO nano-wire array synergistically modified by nano-Ag and TiO2 and preparation method of zinc oxide nano-wire array

The invention relates to a ZnO nano-wire array synergistically modified by nano-Ag and TiO2 and a preparation method of the zinc oxide nano-wire array. The structure of the array is as follows: a ZnO nano-wire is taken as an inner core, nano-Ag is loaded on the surface of the ZnO nano-wire, a TiO2 film is modified at the outermost part of the nano-Ag, wherein the length of the ZnO nano-wire array is 10mum, the thickness of the TiO2 film is 5-10nm. The preparation method comprises the following steps: the ZnO nano-wire array is prepared by a hydro-thermal method, AgNO3 solution is taken as a precursor, nano-Ag is loaded on the surface of the ZnO nano-wire array by an illumination reduction method, then the ZnO nano-wire array is put into mixed solution of Ammonium hexafluorotitanate and boric acid, and the TiO2 film is formed on the surface of the array by an immersion method. The structure has the main purpose that the ZnO nano-wire modified by Ag inside a nanocable can be taken as an expressway for electronic transmission, and the light absorption is enhanced by utilizing the Ag surface plasmon resonance effect. The preparation method has the advantages that the cost is low, the process is controllable, and the repeatability is good, therefore, the preparation method can be applied to photo anode materials of a solar cell and can be also utilized in the photocatalysis field.
Owner:SHIHEZI UNIVERSITY

Preparation method of composite nanowire array with one-dimensional ZnO(zinc oxide)-TiO2(titanium dioxide) core-shell structure

A preparation method of a composite nanowire array with a one-dimensional ZnO(zinc oxide)-TiO2(titanium dioxide) core-shell structure. In the whole preparation process, a wet chemistry method is adopted. The preparation method comprises the following steps: at first, a ZnO seed layer is prepared on conductive glass in a sol-gel method, then a ZnO nanowire array is grown on the seed layer in a liquid-phase deposition method, and next a TiO2 shell layer is prepared on a ZnO nanowire array in a circulating adsorption reaction method, so as to obtain the composite nanowire array with the one-dimensional ZnO-TiO2 core-shell structure. The preparation method has the advantages that (1) compared with the other methods (such as a chemical meteorology deposition method, an atom layer deposition method and a magnetron sputtering method), the preparation method has a simple process, does not require complex equipment and severe environments, and is low in cost; (2) the preparation method can control the diameter and the length of the ZnO nanowire and the thickness of the TiO2 shell layer conveniently; and (3) the preparation method can be combined with a photoanode preparation method of a quantum dot dye-sensitized solar cell conveniently to facilitate the research of the cell performance.
Owner:XI AN JIAOTONG UNIV

Preparation method of zinc oxide nano linear array

The invention discloses a preparation method of a zinc oxide nano linear array, belonging to the technical field of materials. The preparation method comprises the steps of: firstly, depositing a layer of metal film with controllable surface crystal grain radius on the surface of a substrate by adopting a film depositing process; then, floating the metal film on the surface of a growth solution prepared from a zinc nitrate solution and hexamethylene tetramine, which are equal in lolar weight, by adopting a mode that the surface of the metal film faces downwards; and standing under the condition with the temperature of 60-90 DEG C for growing of the zinc oxide nano linear array. By controlling the sizes of the surface crystal grains of the metal film, the zinc oxide nano linear arrays with different growth densities can be acquired conveniently. Compared with the conventional hydro-thermal method for controlling the growth density of the zinc oxide nano linear array by using a growth solution, the preparation method is easier to realize the control of the growth density of the zinc oxide nano linear array, and the zinc oxide nano linear array with higher requirements on the density precision can be prepared at low temperature in a large area without addition of extra steps or cost.
Owner:INST OF ELECTRONICS & INFORMATION ENG OF UESTC IN GUANGDONG

Preparation method of branched zinc oxide nanowire array film

The invention discloses a preparation method of a branched zinc oxide nanowire array film. The preparation method comprises the following steps of: cleaning a conductive substrate with acetone, ethanol and deionized water for later use, and preparing a zinc oxide nanowire array on the surface of the cleaned conductive substrate through a hydro-thermal reaction: cleaning the conductive substrate, and putting into a reaction solution in a reaction kettle; dissolving the reaction solution which consists of a zinc salt, polyethyleneimine, hexamethylene tetramine and ammonia water into a certain amount of water, putting into a high-pressure kettle, heating to 50-200 DEG C, reacting for 1-24 hours, and naturally cooling to the room temperature; and vulcanizing and calcining a growing zinc oxide nanowire (rod) array, and performing secondary hydro-thermal treatment to obtain a branched zinc oxide nanowire (rod) array film. Due to the generation of a branched structure, the specific surface area of a zinc oxide nanowire (rod) can be increased effectively. The zinc oxide nanowire array film prepared with the method can be applied in various fields of dye-sensitized solar cells, photoluminescence, electron field emission and the like. The preparation method is simple and convenient and has a high performance price ratio.
Owner:NANJING UNIV
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