Method for growing nanometer zinc oxide structure through low-temperature heating of zinc and catalyst and application thereof
A technology of zinc oxide nanometer and zinc oxide nanowire, which is applied in the direction of zinc oxide/zinc hydroxide, discharge tube, electrical components, etc., can solve the problems in the field of unapplied cold cathode, etc., and achieve the effect of good field emission characteristics
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[0045] This example shows the process of localized preparation of ZnO nanowire cold cathode electron source array on ITO glass.
[0046] First, the ITO glass substrate was ultrasonically cleaned with acetone and alcohol for 15 minutes, and then dried. Attached figure 1 The localized preparation procedure is shown. First, a zinc particle array is prepared on the surface of the substrate by screen printing, with a thickness of about 15-20 microns, and then, a catalyst gold film is prepared by direct current sputtering, and the thickness is 5 nanometers. The prepared zinc particle array was put into a heating furnace, the temperature was raised to 500°C at a rate of 3°C / min, kept for 1 hour, and then cooled naturally.
[0047] The crystal structure of the prepared zinc oxide nanowire arrays was measured by X-ray diffraction (XRD), and the morphology and morphology of the prepared zinc oxide nanowire arrays were observed by optical microscopy, scanning electron microscopy (SEM) ...
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