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Method for growing nanometer zinc oxide structure through low-temperature heating of zinc and catalyst and application thereof

A technology of zinc oxide nanometer and zinc oxide nanowire, which is applied in the direction of zinc oxide/zinc hydroxide, discharge tube, electrical components, etc., can solve the problems in the field of unapplied cold cathode, etc., and achieve the effect of good field emission characteristics

Active Publication Date: 2009-11-18
SUN YAT SEN UNIV
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

In addition, it has also been reported that zinc oxide nanostructures can be grown directly by thermal oxidation after localized deposition using a mixed slurry of zinc, zinc oxide and carbon particles (reference: Kiatipoom Kongjai, et al, CMU.J.Nat.Sci.Special Issue onNanotechnology, 7(1), 37(2008)), but what they adopted is catalyst-free and a growth method under high-temperature conditions, which is different from the low-temperature heating zinc and catalyst growth methods used in this patent technology, and has not been applied In the field of cold cathode,

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  • Method for growing nanometer zinc oxide structure through low-temperature heating of zinc and catalyst and application thereof
  • Method for growing nanometer zinc oxide structure through low-temperature heating of zinc and catalyst and application thereof
  • Method for growing nanometer zinc oxide structure through low-temperature heating of zinc and catalyst and application thereof

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Embodiment

[0045] This example shows the process of localized preparation of ZnO nanowire cold cathode electron source array on ITO glass.

[0046] First, the ITO glass substrate was ultrasonically cleaned with acetone and alcohol for 15 minutes, and then dried. Attached figure 1 The localized preparation procedure is shown. First, a zinc particle array is prepared on the surface of the substrate by screen printing, with a thickness of about 15-20 microns, and then, a catalyst gold film is prepared by direct current sputtering, and the thickness is 5 nanometers. The prepared zinc particle array was put into a heating furnace, the temperature was raised to 500°C at a rate of 3°C / min, kept for 1 hour, and then cooled naturally.

[0047] The crystal structure of the prepared zinc oxide nanowire arrays was measured by X-ray diffraction (XRD), and the morphology and morphology of the prepared zinc oxide nanowire arrays were observed by optical microscopy, scanning electron microscopy (SEM) ...

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Abstract

The invention provides a method for growing a nanometer zinc oxide structure through the low-temperature heating of zinc and a catalyst and application thereof. The method comprises the following steps (1) cleaning an underlayer to remove impurities on the underlayer; (2) depositing a zinc layer on the underlayer; if the positioning growth is needed, preparing the zinc layer on the surface of the underlayer by a screen printing method, a spin-coating photolithography method or other positioning deposition methods in a positioning mode; (3) preparing a catalyst layer on the zinc layer; and (4) heating the underlayer to a temperature of more than 250 DEG C in an oxygenous atmosphere at a speed of temperature rise of between 2 and 50 DEG C per minute; and keeping the underlayer for 10 minutes to 5 hours at the set temperature; and finally cooling the underlayer. As the zinc and the catalyst can be accurately positioned and placed in advance, the method is conveniently applied to the accurate positioning preparation of a zinc oxide nanowire and a nanometer sharp needle array. As the temperature can be lower than 650 DEG C, the preparation can be carried out on glass and other underlayers to realize the zinc oxide nanowire and the nanometer sharp needle array with low-cost preparation and large-dimension accurate positioning.

Description

technical field [0001] The invention relates to a method for preparing zinc oxide nanowires and nano needles by heating zinc at low temperature and growing catalysts and its application in the preparation of field emission electron source arrays, belonging to the technical fields of nanomaterial preparation and vacuum microelectronic devices. Background technique [0002] Zinc oxide is a wide bandgap semiconductor material with piezoelectric properties, strong plasticity, non-toxic and degradable, etc. It has broad application prospects in optoelectronic devices, field effect transistors, sensors, frequency converters, and biological sciences. Nanostructured ZnO has attracted extensive attention due to its unique properties brought about by its small size. ZnO nanostructures with various morphologies, such as nanowires, nanotubes, nanorods, nanoribbons, nanosprings, and nanorings, have been reported. [0003] According to the growth temperature of zinc oxide nanostructures,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G9/02H01J37/06
Inventor 许宁生张耿陈军邓少芝佘峻聪
Owner SUN YAT SEN UNIV
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