Process for preparing zinc oxide nanometer wire array by femtosecond laser and device thereof

A technology for zinc oxide nanowires and nanowire arrays, which is applied in the field of femtosecond laser preparation of zinc oxide nanowire arrays, can solve the problems of complex process, low output and high cost, and achieves simple preparation process, high preparation efficiency, raw material consumption and low cost. low cost effect

Inactive Publication Date: 2008-11-26
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, the conventional preparation methods of ZnO nanomaterials include vacuum condensation method, precipitation method, sol-gel method, pulsed electron deposition method, arc evaporation method, microemulsion method and template method, etc., but there are obvious shortcomings. Especially in the p

Method used

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  • Process for preparing zinc oxide nanometer wire array by femtosecond laser and device thereof
  • Process for preparing zinc oxide nanometer wire array by femtosecond laser and device thereof
  • Process for preparing zinc oxide nanometer wire array by femtosecond laser and device thereof

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Experimental program
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Effect test

Embodiment 1

[0030] The femtosecond laser emitted by the Ti:Sapphire femtosecond laser has a pulse width of 30fs, a wavelength of 800nm, a pulse frequency of 1kHz, and a laser beam of pulse energy of 1mJ. The beam is focused on a quartz glass substrate through a focusing lens with a focal length of 100mm. On the zinc oxide target, the sample is controlled by a computer-operated two-dimensional mobile platform, and the diameter of the focused spot is about 100um. In this way, periodic nanostructures are gradually formed in the laser irradiation area. Using a scanning electron microscope (5000x / 20kV) to focus on the laser-induced region in the glass sample, ZnO nanowires were observed such as image 3 As shown, a zinc oxide nanowire array with a diameter of 150nm and a length of 2um. The substrate is zinc oxide target made of quartz glass, ordinary glass or silicon material.

Embodiment 2

[0032] Choose a laser with a pulse width of 50fs, a wavelength of 400nm, a pulse frequency of 1kHz, and an energy of 200uJ. The beam is focused on a zinc oxide target made of ordinary glass through a focusing lens with a focal length of 100mm. The sample is moved two-dimensionally by a computer. Platform control, focusing spot diameter is about 100um. In this way, periodic nanostructures are formed in the laser-induced region.

Embodiment 3

[0034] A laser with a pulse width of 40fs, a wavelength of 325nm, a pulse frequency of 1kHz, and an energy of 100uJ is selected. The beam is focused on a zinc oxide target made of silicon through a focusing lens with a focal length of 100mm. The sample is moved two-dimensionally by a computer. Platform control, focusing spot diameter is about 100um. In this way, periodic nanostructures are formed in the laser-induced region.

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Abstract

The invention discloses a method for preparing a zinc oxide nanowires array by femtosecond laser and a device thereof, which belongs to technical fields of micro nanophase material preparation and femtosecond laser micro processing, relates to a periodical nanometer microstructure of zinc oxide material, and particularly provides a method for preparing a periodical nanowires array on the target of the zinc oxide by means of a femtosecond laser radiation field. When the zinc oxide nanowires array is prepared, zinc oxide target material is first fixed on a two-dimensional accurate displacement station, and then a bunch of light femtosecond laser is focalized by a lens to act on the zinc oxide target material; by a coordinated scan of femtosecond induction and the two-dimensional accurate displacement station, the zinc oxide periodical nanowires array is generated. The method for preparing the zinc oxide nanowires array by the femtosecond laser and the device thereof have the advantages that the preparation efficiency is high; the application scope is wide; the zinc oxide nanowires array processed and obtained is neatly and evenly arrayed.

Description

technical field [0001] The invention belongs to the technical field of micro-nano material preparation and femtosecond laser micromachining, and in particular relates to a method and a device for preparing a zinc oxide nanowire array by a femtosecond laser. Background technique [0002] ZnO is a wide bandgap semiconductor material with excellent performance, and has a wide range of applications in the fields of ultraviolet light emission, ultraviolet detection, piezoelectricity, optoelectronics and catalysis. When the size of ZnO is nanoscale, it will show more unique photoactivity, electrical activity, sintering activity and catalytic activity. There are new important applications. At present, the conventional preparation methods of ZnO nanomaterials include vacuum condensation method, precipitation method, sol-gel method, pulse electron deposition method, arc evaporation method, microemulsion method and template method, etc., but there are obvious shortcomings. Especiall...

Claims

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Application Information

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IPC IPC(8): C30B29/16C30B28/02H01L31/0296
Inventor 陈烽贺永宁杨青边浩
Owner XI AN JIAOTONG UNIV
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