The invention discloses an III-
nitride device and a preparation method thereof, and relates to the technical field of sensors. The device sequentially comprises a substrate, a buffer layer, a channel layer, a
barrier layer and a first gas-sensitive layer from bottom to top, wherein the first gas-sensitive layer has a periodic nano structure. According to the structure, high-density gas adsorption sites are provided on the surface, and active
photon-generated carriers are generated through a geometric confinement effect under the assistance of illumination. And the photo-generated carriers promote gas molecules to generate an oxidation-reduction reaction, so that the concentration of two-dimensional
electron gas (2DEG) at a channel of the III-
nitride device is effectively regulated and controlled, and the current of the device is remarkably changed. According to the device provided by the invention, the first gas sensitive layer with the periodic
nanostructure is utilized to catalyze the gas reaction and the synergistic effect of 2DEG, so that high-sensitivity, quick-response and low-detection-limit gas detection is realized.