7results about How to "Increase steepness" patented technology

The present invention proposes a multi-mode bandpass filter structure and a k-band filter based on IPD, which belongs to the field of satellite communication. The filter proposed by the present invention has both notch and cross-coupling modes based on the IPD process, including: a substrate, a metal routing layer and a resonator layer deployed on one surface of the substrate, the resonator layer is located next to the 50Ω transmission line of the substrate, and is connected to the back metal through a metal through hole; wherein the resonator layer is composed of a half-wavelength "mountain"-shaped short-circuit branch loaded resonator Q0 and a 4th-order open ring cross-coupling resonator. Compared with traditional bandpass filters, the technical solution of the present invention can effectively improve the far-end suppression of the K-band bandpass filter.

The invention discloses a broadband balanced notch filter with differential mode non-reflection characteristics, comprising: a balanced differential input port A, a balanced differential output port B, four groups of non-reflection absorption branches, four sections of quarter-wavelength signal transmission lines, four sections of quarter-wavelength anti-connected wiring, four sections of quarter-wavelength filter coupling lines, two sections of quarter-wavelength zero point short-circuit lines, two common-mode absorption resistors, two sections of quarter-wavelength notch coupling lines and four notch absorption resistors. In addition to being able to effectively suppress common-mode noise, the balanced filter introduces a first-order deep notch at the center frequency of the filter, achieving the suppression effect of interference signals within the filter band, and introduces two transmission zeros in the stop band of the filter, thereby enhancing the steepness and filtering selectivity of the transition band of the differential balanced filter, and at the same time achieving the non-reflection characteristics of out-of-band signals under differential mode signal excitation, thereby improving the overall performance of the balanced filter.

The application provides a stamping mold for manufacturing a printed circuit board based on a stamping technology and a preparation method thereof, the stamping mold is prepared based on an mSAP process in a PCB process, and the preparation method comprises the following steps: providing a substrate, preparing a to-be-stamped pattern layer on the substrate, preparing a preset metal plating layer on the to-be-stamped pattern layer, and preparing an anti-sticking treatment layer on the preset metal plating layer. The stamping mold is prepared by using an improved semi-additive process (mSAP), a preset metal plating layer is formed on the surface of the stamping mold, an anti-sticking treatment layer is formed by performing anti-sticking treatment on the preset metal plating layer, the stamping technology is applied to the manufacturing of the PCB, metal circuits are prepared through the PCB process, and the stamping mold is suitable for large-size PCBs. The uniformity of circuits with inconsistent complex feature sizes can be greatly improved, the steepness is high, the process stability is good, batch production can be ensured, and the requirements of hardness, tensile strength and the like of the mold in the PCB stamping process can be easily met.

The present invention provides a modal focus analysis method based on re-blurring theory, comprising: using convolution to blur a grayscale image to be analyzed, performing wavelet transform on the image to be analyzed and the blurred image respectively, extracting spatial edges of the image to be analyzed and the blurred image, and calculating an edge map of the image to be analyzed and an edge map of the blurred image; using a sliding window of a mean matrix to calculate a variance matrix of the extracted low-frequency texture of the image to be analyzed, the low-frequency texture of the blurred image, the high-frequency edge of the image to be analyzed, the high-frequency edge of the blurred image, the edge map of the image to be analyzed and the edge map of the blurred image; variance difference matrix, mean variance difference, and finally calculating a focus score; according to the focus score, obtaining the focus position of the image. The present invention adopts the re-blurring theory to realize self-comparison without a reference image, reduce the actual requirements of the evaluation method on application scenarios and measurement samples, and improve the universality of the focus evaluation method.

The application provides a thick film positive photoresist composition, a preparation method and application thereof. The thick film positive photoresist composition comprises 70-90 parts of a base resin, 10-30 parts of a photosensitive compound and 100-150 parts of a solvent A; the base resin comprises a benzophenone modified phenolic resin and optionally an unmodified phenolic resin; the mass percentage of benzophenone groups in the base resin is 0.8-7.5% based on 100% of the mass percentage of the base resin; the photosensitive compound comprises a non-benzophenone photosensitive compound and optionally a benzophenone compound; the mass percentage of the benzophenone compound is less than or equal to 3.0% based on 100% of the mass percentage of the photosensitive compound. The application improves the uniformity of the benzophenone structure in the thick film positive photoresist composition by designing the specific composition of the thick film positive photoresist composition, thereby improving the steepness of the photoresist and realizing the development of the pattern.

The utility model relates to the technical field of STN products, in particular to a high-gradient STN display screen driving structure which comprises an upper polaroid, an upper glass substrate, a first P I orientation layer, a second P I orientation layer, a lower glass substrate and a lower polaroid which are arranged from top to bottom. The compensation value of the upper polaroid ranges from 500 nm to 700 nm, the slicing angle of the upper polaroid ranges from 15 degrees to 20 degrees, the pretilt angle of the first P I orientation layer and the pretilt angle of the second P I orientation layer range from 7 degrees to 8 degrees, the thickness of the first P I orientation layer and the thickness of the second P I orientation layer range from 500 A to 700 A, the thickness of a gap between the upper glass substrate and the lower glass substrate ranges from 5 micrometers to 7 micrometers, and the thickness of a gap between the upper glass substrate and the lower glass substrate ranges from 5 micrometers to 7 micrometers. According to the utility model, the problems of blurring or distortion of a displayed image, low contrast and poor display effect caused by non-uniform transition between pixel points due to voltage fluctuation and influence on gradient performance can be solved.

The invention discloses a forming method of a semiconductor structure. The forming method comprises the steps of forming a first oxide layer on a substrate; forming a sacrificial layer on the first oxide layer of the second region, wherein the sacrificial layer exposes the first region; forming a second oxide layer on the first oxide layer exposed out of the sacrificial layer, wherein the second oxide layer covers part of the side wall of the sacrificial layer; the sacrificial layer and the first oxide layer located at the bottom of the sacrificial layer are sequentially removed by adopting an anisotropic etching process, so that an opening is defined by the side walls of the first oxide layer and the second oxide layer in the first region and the top surface of the substrate in the second region; and forming a third oxide layer on the substrate at the bottom of the opening, wherein the top surface of the third oxide layer is lower than the top surface of the second oxide layer. According to the embodiment of the invention, the width of the slope formed on the side wall of the opening is reduced or the slope is eliminated, the steepness of the side wall of the opening is improved, and the performance of the semiconductor structure is correspondingly improved.