753 results about "Polyimide membrane" patented technology

A probing device for electrically contacting with a plurality of electrodes 3, 6 aligned on an object 1 to be tested so as to transfer electrical signal therewith, comprising: a wiring sheet being formed by aligning a plurality of contact electrodes 21, 110b, corresponding to each of said electrodes, each being planted with projecting probes 20, 110a covered with hard metal films on basis of a conductor thin film 41 formed on one surface of an insulator sheet 22 of a polyimide film by etching thereof, while extension wiring 23, 110c for electrically connecting to said each of said contact electrodes being formed on basis of a conductor thin film formed on either said one surface or the other surface opposing thereto of said insulator sheet of the polyimide film; and means for giving contacting pressure for obtaining electrical conduction between said extension wiring and said object to be tested by contacting tips of said projecting contact probe formed onto said each contact electrode through giving pressuring force between said wiring sheet and said object to be tested.

The invention provides a laminate of a substrate, a polyimide film, and a coupling treatment layer interposed therebetween, which provides different delamination strengths between the substrate and the polyimide film to form a prescribed pattern. The invention also provides a method for producing such a laminate formed from at least a substrate and a polyimide film, whereby, using a film obtained by plasma treatment of at least the surface facing the substrate as the polyimide film, coupling agent treatment is performed on at least one of the surfaces facing the substrate and the polyimide film to form a coupling treatment layer, deactivation treatment is performed on a portion of the coupling treatment layer to form a pre-determined pattern, and then pressing and heating are performed with the substrate and polyimide film overlapping.

This invention relates to a method of making flat sheet asymmetric membranes, including cellulose diacetate/cellulose triacetate blended membranes, polyimide membranes, and polyimide/polyethersulfone blended membranes by formulating the polymer or the blended polymers dopes in a dual solvent mixture containing 1,3 dioxolane and a second solvent, such as N,N′-methylpyrrolidinone (NMP). The dopes are tailored to be closed to the point of phase separation with or without suitable non-solvent additives such as methanol, acetone, decane or a mixture of these non-solvents. The flat sheet asymmetric membranes are cast by the phase inversion processes using water as the coagulation bath and annealing bath. The dried membranes are coated with UV curable silicone rubber. The resulting asymmetric membranes exhibit excellent permeability and selectivity compared to the intrinsic dense film performances.

A pixel portion 100 of a liquid crystal display device includes a thin film transistor T including a gate electrode 13, a gate insulating film 16, a channel region 18, and source/drain regions 22, a source line (data) 26 for supplying current to the thin film transistor T and a pixel electrode 24. In the formation of a pixel circuit 100, a gate electrode 13, a gate insulating film 16, and the channel region 18 are firstly formed on a glass substrate 10. After the formation of the channel region 18 and the like, a polyimide film 20 surrounding the peripheries of the regions to be provide with the source/drain regions 22, the pixel electrode 24 and the source line 26 on a glass substrate 10 is formed. The regions surrounded with the wall of the polyimide film 20 are applied with a liquid material and subjected to a thermal treatment, thereby forming the element of the source/drain regions 22 and the like.

The present invention deals with a process for treating a polyimide comprising exposing said polyimide to a compound selected from the group consisting of dendrimers, hyperbranched polymers and mixtures thereof. The polyimide may be in the form of a membrane and the membrane, after treatment according to the process of the invention, may be suitable for use in a membrane-based separation technique, for example gas separation, filtration, microfiltration, ultrafiltration, reverse osmosis or pervaporation. The membrane may for example be suitable for separation of gas and hydrocarbon mixtures including mixtures of H2/N2, H2/CO2, He/N2, CO2/CH4, and C2-C4 hydrocarbon mixtures.

A polyamic acid resin composition, and a polyimide film and laminate prepared therefrom are provided. The polyamic acid resin composition includes a polyamic acid resin, a solvent, and a polar aprotic solution containing nanoscale silica, with surface hydroxyl groups, modified by a surface modification agent. Particularly, the surface modification agent has a structure represented by formula (I):

R¹—Si—(OR²)₃  formula (I)

• • wherein, R¹ is an aliphatic group or an aryl group, and R² is a C_1-8 alkyl group.

A cleaning method for a film deposition apparatus that deposits a polyimide film conveyed into a film deposition chamber by feeding a first source gas formed of dianhydride and a second source gas formed of diamine into the film deposition chamber, the method including the steps of: generating an oxygen atmosphere in the film deposition chamber, and removing polyimide remaining in the film deposition chamber by heating the film deposition chamber at a temperature of 360° C. to 540° C. in the oxygen atmosphere and oxidizing the polyimide.

The invention discloses a liquid crystal phase shift unit for a reflected adjustable phase shifter. The liquid crystal phase shift unit comprises two upper and lower layers of medium substrates, a liquid crystal layer is injected in the gap between the two upper and lower layers of medium substrates, a metal microstrip patch electrode is arranged on the lower side of the upper layer medium substrate, a metal total reflection ground electrode is arranged on the upper side of the lower layer medium substrate, and polyimide film coating is respectively arranged on upper and lower surfaces of the liquid crystal layer; the metal microstrip patch electrode comprises two identical dipole patches, an offset voltage loading line and an auxiliary electrode, the two dipole patches are arranged in parallel, the offset voltage loading line is connected with the two dipole patches orthogonally to form a patch unit, the auxiliary electrode is a quadrilateral metal frame, and the quadrilateral metal frame surrounds the whole patch unit and is connected with the offset voltage loading line. The auxiliary electrode has a simple main body structure, educes the saturation bias voltage, and can be used in the field of liquid crystal reflected phase shifters and phase control antennas within microwave, millimeter wave and terahertz frequency bands.

Provided is a display device that can be made thin, lightweight, and flexible, has no problems of cracks and peeling caused by thermal stress, and is excellent in dimension stability and the like. The display device includes: a supporting base including a polyimide film; and a gas barrier layer formed on the supporting base, in which the polyimide film has a transmittance of 80% or more in a wavelength region of from 440 nm to 780 nm, and a coefficient of thermal expansion of 15 ppm/K or less, and has a difference in coefficient of thermal expansion from the gas barrier layer of 10 ppm/K or less.

The invention relates to an apparatus for spin coating for forming a resist film, an SOG film, a polyimide film, and the like in manufacturing semiconductor devices and has the object of forming a coated film with a specified and uniform thickness even in case that an amount of discharged coating solution is a little. An apparatus for spin coating of the invention comprises a rotatable table for placing a wafer, a coating solution discharging means which is set above the rotatable table and discharges a coating solution on the surface of the wafer, and a solvent discharging means which is above the rotatable table and discharges a solvent capable of dissolving the coating solution.

Disclosed are a heat-resistant resin laminate film comprising a heat-resistant insulating film such as a polyimide film and a heat-resistant resin layer laminated thereon, which laminate film is free from warp; and a laminate film with a metal layer, comprising a heat-resistant insulating film and a metal layer laminated thereon through a heat-resistant resin layer, which laminate film with a metal layer is free from warp in the state that a circuit pattern is formed. In the heat-resistant resin laminate film, a heat-resistant resin layer is laminated on at least one surface of the heat-resistant insulating film, wherein the heat-resistant resin layer has a coefficient of linear expansion kA (ppm/° C.) within the range of k−10≦kA≦k+20 (k: coefficient of linear expansion of the heat-resistant insulating film). The laminate film with a metal layer is one obtained by laminating the metal layer on the heat-resistant resin layer of the heat-resistant resin laminate film.

The present invention discloses a new type of polyimide membrane with high permeances and high selectivities for gas separations and particularly for CO₂/CH₄ and H₂/CH₄ separations. The polyimide membranes have CO₂ permeability of 50 Barrers or higher and single-gas selectivity for CO₂/CH₄ of 15 or higher at 50° C. under 791 kPa for CO₂/CH₄ separation. The polyimide membranes have UV cross-linkable functional groups and can be used for the preparation of UV cross-linked polyimide membranes having CO₂ permeability of 20 Barrers or higher and single-gas selectivity for CO₂/CH₄ of 35 or higher at 50° C. under 791 kPa for CO₂/CH₄ separation.

The present invention discloses a new type of high performance polymer membranes derived from aromatic polyimide membranes and methods for making and using these membranes. The polymer membranes described in the present invention were derived from aromatic polyimide membranes by crosslinking followed by thermal treating. The aromatic polyimide membranes were made from aromatic polyimide polymers comprising both pendent hydroxy functional groups ortho to the heterocyclic imide nitrogen and cross-linkable functional groups in the polymer backbone. The high performance polymer membranes showed significantly improved permeability for gas separations compared to the aromatic polyimide membranes without any treatment. The high performance polymer membranes also showed significantly improved selectivity for gas separations compared to the thermal-treated but non-UV-crosslinked aromatic polyimide membranes. The high performance polymer membranes of the present invention are suitable for liquid, gas, and vapor separations, as well as for catalysis and fuel cell applications.

The invention relates to polyimide membranes and to a phase inversion method for the production thereof. The polyimide membranes can be used to separate different gas mixtures.

Perfluorinated polyimides (and co-polyimide) compositions, particularly films are disclosed, comprising at least 50 mole percent of a polymeric repeat unit derived from contacting 3,3′,4,4′-biphenyltetracarboxylic dianhydride (BDPA) and 2,2′-bis(trifluoromethyl) benzidine (TFMB) monomers. The perfluorinated polyimide (and co-polyimide) films of the invention have an in-plane coefficient of thermal expansion (CTE) between −5 and +20 ppm/° C. and a average light transmittance percent of from about 65.0 to about 99.0 (on a 75-micron thick film basis). The films of the present invention were converted to a polyimide using a chemical conversion method instead of typically employed thermal conversion step thus yielding these desirable properties. The films of the present invention can be an excellent substrate in an optical display device and can be used to replace rigid glass substrates. Finally, the polyimide films of the invention can also be used to manufacture flexible display devices (e.g., cellular phones, personal digital assistants, portable video games, laptops, and the like).

The invention discloses a black matte polyimide thin film and a preparation method thereof. The preparation method comprises the following steps that 1, black slurry is prepared, wherein a silane coupling agent is added to dimethylacetamide to be stirred to be uniform, black pigment is added, and the black slurry is obtained after high-pressure homogenization treatment is conducted; 2, inorganic filler dispersion liquid is prepared, wherein a matting agent and talcum powder are added to organic solvent and stirred to be uniform, and shear dispersion and ultrasonic dispersion treatment is conducted; 3, the black matte polyimide thin film is prepared, wherein diamine is dissolved in an organic solution, tetracarboxylic acid dianhydride with isoequivalent weight is added, PAA resin is obtained after a reaction is conducted, the PAA resin, the black slurry prepared in the first step and the inorganic filler dispersion liquid prepared in the second step are taken, mixed, stirred and defoamed, and the black matte polyimide thin film is obtained through two-way stretching and high-temperature imidization. The black matte polyimide thin film is low in light transmittance and lustrousness and excellent in mechanical property.

Disclosed is a polyimide film prepared from an aromatic tetracarboxylic acid component consisting essentially of 3,3′,4,4′-biphenyltetracarboxylic dianhydride and an aromatic diamine component consisting essentially of not less than 65 mol phenylenediamine % but less than 97 mol % of p-phenylenediamine and not less than 3 mol % but less than 35 mol % of 2,4-toluenediamine.

The present invention provides a flexible display panel. The flexible display panel comprises a display area and a non-display area. The non-display area comprises a substrate, an insulation layer arranged on the substrate, a planarization layer arranged on the insulation layer, a chip bonding area arranged on the planarization layer and an outer edge. An ACF (Anisotropic Conductive Film) excessive glue blocking portion is formed between the chip bonding area and the outer edge, and the ACF excessive glue blocking portion is extended along the extension direction of the outer edge. The ACF excessive glue blocking portion can avoid ACF overflowing to avoid a phenomenon that glass and a polyimide film cannot be separated. The present invention further provides a preparation method of a flexible display panel. The method comprise the steps of: providing the display substrate, wherein the display substrate comprises a plurality of panel areas, each panel area comprises a display area and anon-display area, and each non-display area comprises the substrate, the insulation layer, the planarization layer, the chip bonding area and a cutting area; forming the ACF excessive glue blocking portion at a position between the chip bonding area and the cutting area through adoption of patterning processing; and cutting the display substrate along the cutting area, and obtaining the flexibledisplay panel.

The invention relates to a method for producing a fine line flexible circuit board with high racking strength, including the following steps: selecting a metal foil as the carrier, vacuum sputtering a layer of sputtering metal level, which can improve the racking strength of the thin copper and the carrier, on one side of the metal foil, then coiling the planting thin copper layer on the sputtering metal level; selecting a film matrix which is coated with B stage modified epoxy or B stage acrylics or polyester film of TPI resin or polyimide film or liquid crystal polymer film on one side or on double sides; placing the thin copper layer with metal foil, release paper layer, silicon rubber layer, Teflon layer, stainless steel layer on surface of one side or double sides of the matrix in sequence from inside out; and then pressing the thin copper layer with metal foil carrier on surface of one side of the matrix or on surfaces of the double sides of the matrix separately. Comparing with the prior art, the equality of the racking strength is effectively ensured at last, and the processing control is simple, the affinity between the matrix and the thin copper layer is good, the racking strength is high, the yield rate is high, and the cost for processing is low; the method is suitable for processing circuit boards with small-bore, and has high reliability; the electroplated layer is uniform and is suitable for producing a large amount of fine line products; the method can be used for producing flexible circuit boards with broad width, the utility ratio of the material is high and the efficiency is high.

The present invention discloses one kind of ultra low dielectric constant polyimide film and its preparation process. The polyimide film features its honeycomb structure of 5-2000 nm size, two compact surface layers, thickness of 10-200 microns and porosity of 30-85 %. The preparation process includes the following steps: 1. dissolving polyamic acid as the precursor of polyimide in polar solvent to compound filming liquid of 10-30 wt% concentration; 2. flow casting the filming liquid on some support to form liquid film of 50-500 micron thickness; 3. soaking the liquid film inside coagulating bath to solidify into polyamic acid film; 4. soaking and cleaning in detergent, and drying to obtain honeycombed polyamic acid film; and 5. heat treating the polyamic acid film at 100-300 deg.c to iminate so as to obtain honeycombed polyimide film of dielectric constant 1.45-2.50.

The invention discloses a preparation method of an efficient electrostatic spinning oil-water separation fiber membrane. The preparation method includes the steps that polyamic acid (PPA) is synthesized, a PPA nanofiber membrane is prepared in an electrospinning mode, and the PPA nanofiber membrane is imidized into a polyimide membrane (PI); a cellulose acetate (CA) nanofiber membrane is prepared; coaxial electrospinning is carried out on CA-PAA, and a product is imidized into CA-PI; benzoxazine monomers (BAF-tfa) are synthesized; in-situ immobilization is performed on the CA, PI and CA-PI nanofiber membranes with BAF-tfa and BAF-tfa/silica nanoparticles (SiO2NPs); an oil-water separation experiment is carried out. The preparation method has the advantages that by carrying out surface modification on the fiber membranes, the CA-PI nanofiber membrane which is biodegradable, low in cost, large in oil-water separation flow and high in separation efficiency is obtained; the high-performance membrane material has broad application prospects in oil-water separation, sewage treatment and deepwater oil leak.

A dye-sensitized solar cell electrode includes a substrate made of a polyimide film obtained by reaction of a biphenyl tetracarboxylic acid dianhydride compound with a paraphenylenediamine compound.

The invention relates to a method for preparing an ultra-thick polyimide film with high thermal conductivity and low thermal expansion coefficient. The process steps are: dissolving monomeric diamine in an aprotic polar solvent, adding The dianhydride and the surface-treated nano heat-conducting material are reacted for 4-10 hours to synthesize the polyamic acid resin containing the nano-heat conducting material. Wherein, the addition amount of the nano-thermal conductive material accounts for 1%-10% by mass of the synthetic polyamic acid resin; the preferred addition amount is 3%-8% by mass; Take it on the belt, dry it at 100-200°C, and dehydrate and imidize the obtained salivating film at a high temperature of 300-480°C to obtain an ultra-thick polyimide film with good thermal conductivity and low thermal expansion coefficient. The ultra-thick polyimide film prepared by the method of the invention has high thermal conductivity and low thermal expansion coefficient.

On top of a silicon substrate, a polyimide film with a thickness of 10 μm is formed. On top of this, a magnetic thin film that is a polyimide film containing Fe fine particles and that has a thickness of 20 μm is formed. On top of this magnetic thin film, a patterned Ti/Au film and a Ti/Au connection conductor are formed. On top of this, a polyimide film with a thickness of 10 μm, and a Cu coil with a height 35 μm, width 90 μm, space 25 μm, and a polyimide layer that fills the spaces in the Cu coil are formed. On top of this, via a polyimide film with a thickness of 10 μm, a magnetic thin film that is a polyimide film containing Fe particles and that has a thickness of 20 μm is formed. This thin film inductor has a small alternating current resistance. The present invention provides a magnetic thin film that is well suited for mass production, can be manufactured easily, can be made into a thick film, has soft magnetic qualities, and is inexpensive. The present invention also provides a magnetic component that uses this magnetic thin film, manufacturing methods for these, and a power conversion device.

A laser device includes a can package of a laser diode having a lead terminal secured to a through hole in a stem by a sealant, and a flexible substrate having a transmission line on a front surface of a polyimide film. The lead terminal of the can package and one end of a transmission line of the flexible substrate are connected by soldering. A resistor for matching the impedance of the transmission line and the impedance of the lead terminal is located in the vicinity of a connection of the transmission line and the lead terminal.

The invention relates to a soft support bridge type silicon micro-piezoelectric ultrasonic transducer chip which comprises a silicon substrate with a square conical hole which is small at the top andbig at the bottom in the center; a silicon layer and a first oxidation layer are sequentially covered on the front surface of the silicon substrate, and a second oxidation layer is covered on the backsurface; the corresponding silicon layer and the first oxidation layer above the square hole of the front surface of the silicon substrate constitute a square vibration membrane, one pair of oppositesides of the square vibration membrane respectively etch a vertical narrow slot, and the vertical projection of each narrow slot is positioned on the inner side of the hole edge above the front surface of the silicon substrate; a lower electrode, a piezoelectric membrane and an upper electrode are sequentially deposited on the square vibration membrane; a polyimide membrane is deposited on various parts on the front surface of the silicon substrate; and the square vibration membrane which is etched with the vertical narrow slots and the polyimide membrane commonly constitute a soft support anti-sound leakage bridge type vibration membrane. The anti-sound leakage bridge type structure is used on the vibration membrane of the transducer; in order to avoid sound leakage through the narrow slots, the soft polyimide membrane is deposited on the narrow slots, which has little effect on vibration of the vibration membrane and can still keep high sensitivity.

This polyimide film is superior in heat resistance, rigidity and high frequency properties, is free of inconveniences due to curling even when various functional layers are laminated by heating, and is preferable as a substrate film superior in thermal degradation stability for electronic parts. This polyimide film has a planar orientation coefficient of 0.79-0.89 as measured by an X-ray diffraction method, a difference in the surface planar orientation degree between one surface thereof and the other surface thereof of not more than 2 and a curling degree of not more than 5%, which is obtained by imidation of a polyimide precursor film having a particular imidation rate.

This invention relates to a suitable electrostatic chuck to hold a substrate during the manufacture of a semiconductor integrated circuit having excellent cooling performance and insulation performance, and a low level of particulate generation, which is comprised of an electrostatic chuck, comprising a metal substrate, a first insulating layer of silicone rubber formed directly or via an adhesive layer on the metal substrate and having a thermal conductivity of 0.5 W/mK or more, an electrically conducting pattern formed directly or via an adhesive layer on this first insulating layer, a second insulating layer of an insulating polyimide film formed directly or via an adhesive layer on this electrically conducting pattern, and a third insulating layer formed directly or via an adhesive layer on this second insulating layer, wherein this third insulating layer is a silicone rubber containing reinforcing silica, this layer not containing any thermally conductive filler having an average particle size of 0.5 μm or more.

Perfluorinated polyimides (and co-polyimide) compositions, particularly films are disclosed, comprising at least 50 mole percent of a polymeric repeat unit derived from contacting 3,3′,4,4′-biphenyltetracarboxylic dianhydride (BDPA) and 2,2′-bis(trifluoromethyl) benzidine (TFMB) monomers. The perfluorinated polyimide (and co-polyimide) films of the invention have an in-plane coefficient of thermal expansion (CTE) between −5 and +20 ppm/° C. and a average light transmittance percent of from about 65.0 to about 99.0 (on a 75-micron thick film basis). The films of the present invention were converted to a polyimide using a chemical conversion method instead of typically employed thermal conversion step thus yielding these desirable properties. The films of the present invention can be an excellent substrate in an optical display device and can be used to replace rigid glass substrates. Finally, the polyimide films of the invention can also be used to manufacture flexible display devices (e.g., cellular phones, personal digital assistants, portable video games, laptops, and the like).

To provide an electronic circuit board in which a conductive wire is excellently connected to a bonding pad formed directly on a polyimide film. The electronic circuit includes: a first layer metal pattern 3 formed on a substrate 1; a polyimide film 2 formed on the first layer metal pattern 3; and a second layer metal pattern formed on a surface of the polyimide film 2. A conductive bump 4 is formed on the surface of the second layer metal pattern 31 by ball-bonding to provide electrical connection with a semiconductor chip 7 bonded to the first layer metal pattern by die-bonding. The conductive bump 4 is electrically connected to an electrode 72 of the semiconductor chip 7 by wire bonding.