Flexible CIGS thin-film solar cell and absorption layer preparation thereof

Abstract

The invention belongs to a flexible CIGS thin-film solar cell and a process for preparing an absorption layer thereof, the flexible CIGS thin-film solar cell is a multi-layer film structure, which comprises an substrate, a bottom electrode, an absorption layer, a buffer layer, a window layer, an anti-reflecting film and an upper electrode, and the flexible CIGS thin-film solar cell is characterized in that the substrate is made of flexible metals or polyimide. The process for preparing the adsorption layer of the flexible CIGS thin-film solar cell is characterized in that the substrate is made of flexible metals or polyimide, the bottom electrode Mo of the thickness of 0.5-1.5 mu m is deposited by magnetron sputtering, a metal prefabricating layer is prepared on a Mo thin-film, and is in vacuum seal to be placed in a furnace to heat, the temperature of the area of a solid selenium source is controlled between 180-300 DEG C to perform selenizing treatment, thereby enabling the metal prefabricating layer to be transformed into a semiconductor thin-film. Through performing selenizing or vulcanizing under saturation vapor pressure of selenium or sulfur in a vacuum seal silica tube, controllable repeatability of the technique process is fine, use quantity of selenium or sulfur is reduced, besides, the process is controllable and the equipment is simple.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a flexible copper indium gallium selenium thin film solar cell and a method for preparing an absorbing layer thereof. Background technique [0002] The compound semiconductor copper indium selenium with chalcopyrite structure is CuInSe 2 , abbreviated as CIS series miscible crystals as direct bandgap materials, thin-film solar cells using it as the absorber layer, is considered to be one of the most promising third-generation compound photovoltaic cells, and its composition includes: CuInSe 2 , CuIn 1-X Ga X Se 2 , CuInS 2 , CuIn 1-X Ga X S 2 , CuIn 1-X Ga X Se 2-X S 2 Wait. The existing copper indium gallium selenide or sulfur thin film solar cell is a new type of solar cell developed in the late 1980s. It is made of soda lime glass and metal foil, such as: stainless steel foil, titanium foil, molybdenum foil, aluminum foil, etc. Or a photovoltaic de...

AI Technical Summary

Problems solved by technology

[0005] Conventional solid-state source selenization or sulfurization is to heat selenium or sulfur in a vacuum chamber to vaporize it into steam, and react with the metal prefabricated layer after reaching a certain temperature to form CuIn 1-X Ga X Se 2 or CuIn 1-X Ga X S 2 , because the uniformity of the entire temperature zone in the vacuum chamber is uncontrollable, and selenium or sulfur vapor is required to fill the entire vacuum chamber, and it will condense when it is cold on the wall of the vacuum chamber, resulting in unstable selenization process and uncontrollable performance of the absorbing layer film. Good, affect the performance of thin film solar cells

If the reaction gas hydrogen or argon + hydrogen is added, highly toxic hydrogen selenide is produced, and tail gas treatment is a big problem; if only inert gas (such as: argon) is introduced, selenium vapor or sulfur vapor cannot be controlled high pressure, resulting in unstable selenization process and poor controllability

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