The invention belongs to a flexible CIGS thin-film
solar cell and a process for preparing an
absorption layer thereof, the flexible CIGS thin-film
solar cell is a multi-layer
film structure, which comprises an substrate, a bottom
electrode, an
absorption layer, a buffer layer, a window layer, an anti-reflecting film and an upper
electrode, and the flexible CIGS thin-film
solar cell is characterized in that the substrate is made of flexible metals or
polyimide. The process for preparing the adsorption layer of the flexible CIGS thin-film solar
cell is characterized in that the substrate is made of flexible metals or
polyimide, the bottom
electrode Mo of the thickness of 0.5-1.5 mu m is deposited by magnetron
sputtering, a
metal prefabricating layer is prepared on a Mo thin-film, and is in vacuum seal to be placed in a furnace to heat, the temperature of the area of a
solid selenium source is controlled between 180-300 DEG C to perform selenizing treatment, thereby enabling the
metal prefabricating layer to be transformed into a
semiconductor thin-film. Through performing selenizing or vulcanizing under saturation
vapor pressure of
selenium or
sulfur in a vacuum seal silica tube, controllable
repeatability of the technique process is fine, use quantity of
selenium or
sulfur is reduced, besides, the process is controllable and the equipment is simple.