18 results about "Black silicon" patented technology

The present invention discloses a pyroelectric photodetector based on black silicon carbide ceramics and a pyroelectric optical power meter / pyroelectric optical energy meter using the pyroelectric photodetector. The pyroelectric photodetector includes a heat-conducting plate (21) made of black silicon carbide ceramics, one surface of which is a light-absorbing surface (211). A thermopile (22) or a series-connected conductive metal layer (302) is installed on either side of the heat-conducting plate (21) to form the pyroelectric photodetector. By using black silicon carbide ceramics simultaneously as the heat-conducting plate (21) and the light absorber, the pyroelectric photodetector is directly combined with the thermopile (21) or the series-connected conductive metal layer (302), simplifying the structure of the pyroelectric photodetector. At the same time, black silicon carbide ceramics have a high thermal conductivity coefficient, a small thermal expansion coefficient, high heat resistance, a high laser damage threshold, and the light absorbing surface can be cleaned by polishing, which reduces the failure rate of pyroelectric photodetectors and significantly extends their service life.

This invention belongs to the field of semiconductor material manufacturing technology, specifically relating to a black silicon nanoforest structure, its preparation method, and its applications. The invention involves depositing a silicon-rich silicon nitride thin film via PECVD, followed by chemical etching using gaseous HF (VHF) to form a uniform silicon forest structure. This method eliminates the need for metal catalysts and masks, removing metal contamination and physical damage. The process is simple and controllable, making it suitable for the industrial production of large-area black silicon.

The application discloses a kind of S, Se co-doped silicon-based near-infrared photosensitive materials based on picosecond laser-ion implantation and preparation method and application, belong to semiconductor optoelectronic material technical field;A kind of S, Se co-doped silicon-based near-infrared photosensitive materials based on picosecond laser-ion implantation preparation method, comprising the following steps: using vacuum deposition process is deposited Se doped film on the surface of silicon substrate, then by picosecond laser scanning preparation obtains the micro-nano composite structure black silicon;Sulfur ion implantation modification is carried out to the micro-nano composite structure black silicon, annealing, and the S, Se co-doped silicon-based near-infrared photosensitive material is prepared.The application is successfully solved the problem of thermal damage and lattice defect in traditional doping method by the composite doping process of picosecond laser-ion implantation, realizes the preparation of S, Se co-doped silicon-based near-infrared photosensitive material with high concentration and low defect.The light absorption rate of the material at 1300nm band is significantly improved, which provides a mass production process scheme for the third generation photovoltaic device and high-performance infrared detector, and has important application value and broad market prospect.

The present application relates to a new type of stainless steel core double-sided PVT hybrid electric heating assembly, the new type of stainless steel core double-sided PVT hybrid electric heating assembly includes heat transfer inner core, the heat transfer inner core is packed with heat preservation frame around, the heat transfer inner core one side from inside to outside is sequentially provided with insulating layer, PV cell piece and transparent film, the battery piece group both sides are provided with first EVA adhesive film and second EVA adhesive film respectively, the heat transfer inner core other side is provided with the light transmission glass that can be detachably connected with the heat preservation frame, the light transmission glass and the heat transfer inner core between air layer is reserved, the PV cell piece is black silicon PERC cell, the battery has full spectrum operating characteristics, and after secondary annealing process, it has lower temperature attenuation coefficient, can work long-term under high temperature, the electric heating assembly structure is reasonable, and has the effect of high temperature resistance, in actual use, the electric heating radiation conversion rate of electric heating product is greatly strengthened, and it is suitable for promotion and use.

The invention provides a method for improving a super junction power device IGSS failure, and relates to the technical field of power device super junction yield improvement. Comprising the following steps: determining that a failure parameter of a failure area is IGSS according to a wafer test or a wafer receiving test result; determining a plurality of failure reasons for the IGSS; according to the first failure reason, determining a plurality of corresponding formulated schemes, and executing the plurality of formulated schemes to determine a plurality of corresponding execution results; according to the silicon nails in the unit area, determining that the failure morphology has relevance with black silicon distribution generated by a preset etching process; obtaining an optimal etching process formula when correlation exists, and optimizing the bottom of the failed morphology according to the optimal etching process formula; by adjusting the gas ratio, the smooth and silicon-nail-free optimal morphology is obtained within the angle morphology within the preset range, and the EAS capability limit window of the optimal morphology is determined. In this way, IGSS 1V failure is improved, and the yield of mass production is greatly improved.

The application discloses a black silicon-based fluorescent microsphere, a preparation method and application of an immunochromatography reagent card, relates to the technical field of immunochromatography detection, and the preparation method comprises the following steps: silicon-based solid part preparation, fluorescent doping, microsphere forming, microsphere purification and surface modification. The prepared black silicon-based fluorescent microsphere has the characteristics of high biocompatibility of a silicon-based material, high sensitivity of a fluorescent microsphere and low background interference of a black base, and the detection performance of the immunochromatography reagent card is remarkably improved.

The present application belongs to the technical field of nitride ceramics. The present application provides a black silicon nitride ceramic and a preparation method thereof. The preparation method comprises the following steps: mixing silicon nitride, niobium oxide, a dispersing agent and water to obtain a slurry; sequentially performing sand milling, drying and sieving on the slurry to obtain silicon nitride nano-powder; sequentially performing dry pressing pre-forming and cold isostatic pressing forming on the silicon nitride nano-powder to obtain a ceramic blank; and performing hot pressing sintering on the ceramic blank to obtain the black silicon nitride ceramic. The black silicon nitride ceramic prepared by the present application enriches the color of silicon nitride ceramic, has a dense structure, is a hexagonal crystal, has a hardness greater than 17.9 GPa, has a toughness greater than 11.0 MPa·m 1 / 2 , has excellent mechanical properties, and has a strength higher than 1830 MPa; compared with the zirconium oxide ceramic commonly used for the back plate of a mobile phone, the black silicon nitride ceramic has a smaller density, a lighter texture and a more smooth signal transmission; and the preparation method is simple and has a low cost.

The invention relates to black silicon carbide porous ceramic with low light reflection and low resistivity and a preparation method thereof. The black silicon carbide porous ceramic with low light reflection and low resistivity comprises a silicon carbide main body phase, a boron carbide sintering aid phase, a light absorption phase and a communicated pore phase, wherein the light absorption phase comprises a metal oxide or a combination of the metal oxide and kaolin; preferably, the metal oxide comprises a transition metal oxide; more preferably, the transition metal oxide comprises at least one of Fe3O4, Fe2O3, MnO2, MnO, Cr2O3 and TiO2, and the transition metal oxide comprises at least one of Fe2O3, Fe2O3, MnO2, MnO, Cr2O3 and TiO2.

The utility model discloses a thermochromic film-coated cover plate, which comprises a glass substrate, a thermochromic ink layer, wherein the thermochromic ink layer is arranged on one side of the glass substrate; the black silicon carbide coating layer is arranged on one side, far away from the glass substrate, of the thermochromic ink layer. The heat discoloration film-coated cover plate can reduce the risk of falling off from a product shell.

The utility model discloses a device for reducing optical interference of a chip. A three-axis electric displacement platform is arranged in a framework of the equipment, an electric sucker is arranged at the bottom of the three-axis electric displacement platform, feeding and discharging windows are respectively arranged on two sides of the three-axis electric displacement platform, a feeding bracket and a finished product bracket are correspondingly arranged on the inner wall of the three-axis electric displacement platform, a chip clamp is arranged at the top of the bracket, a piezoelectric micro sprayer and a spraying frame are further arranged in the framework, and a black silicon storage bin is arranged at the top and connected with the sprayer through a conveying pipe. During working, the three-axis electric displacement platform transfers a chip, the metering pump accurately controls the conveying amount of a black silicon material, the array type piezoelectric micro spray head with the adjustable spray head diameter performs uniform spraying, and the optical sensor monitors the spraying condition in real time. The equipment effectively overcomes the defects of a traditional method, not only can accurately and efficiently reduce the optical interference of the chip and improve the performance and quality of the chip, but also has relatively high practical value and market prospect due to reasonable structural design and convenience in operation, observation and maintenance.

Microfluidic unit (1) comprising: a substrate (5) defining a microfluidic channel (10) with a sealed section (12) having a sealed cross-section, wherein the sealed section has: a fluid path (14) formed by a wetting area; and a non-wetting area (16) extending along and adjacent to the liquid path (14), wherein the non-wetting area is designed to provide a vent for emptying a gas from the wetting area along the non-wetting area, wherein the non-wetting area comprises black silicon.

A black silicon carbide ceramic based thermoelectric photodetector, and a thermoelectric optical power meter / thermoelectric optical energy meter using same. The black silicon carbide ceramic based thermoelectric photodetector comprises a thermal conduction plate (21) made of a black silicon carbide ceramic, wherein the surface of one side of the thermal conduction plate (21) is an optical absorption surface (211); and a thermopile (22) or a series connection conductive metal layer (302) is arranged on the surface of either side of the thermal conduction plate (21) to constitute the thermoelectric photodetector. In the thermoelectric photodetector, the black silicon carbide ceramic is used as both the thermal conduction plate (21) and a light absorber, and is directly combined with the thermopile (22) or the series connection conductive metal layer (302) to constitute the thermoelectric photodetector, thereby simplifying the structure of the thermoelectric photodetector.

The application discloses a grinding wheel cutting piece for cutting an amorphous magnetic core or an iron core and a preparation method, and relates to the field of cutting equipment. The grinding wheel cutting piece comprises green silicon carbide, black silicon carbide, phenolic resin liquid, phenolic resin powder, PVC liquid H-1622, auxiliary materials and diiron trioxide. The phenolic resin liquid comprises PR-55729 and PR-940, the phenolic resin powder comprises PR-217 and PR-5195, and the auxiliary materials comprise white corundum, calcium carbonate, garnet and single-crystal corundum. The special phenolic resin liquid, the phenolic resin powder and the PVC liquid are adopted, the production forming capacity of the grinding wheel cutting piece is improved, the thickness precision control and the flatness improvement are easily achieved, the thickness precision error of the cut product is small, the product quality consistency is high, secondary manual and equipment grinding are not needed, the sharpness of the cutting piece is obviously improved, the cutting piece replacement frequency is reduced, the work efficiency is improved, harmful smoke and dust are not generated during cutting, and the product is good for human health.

The application provides a purification method of silicon carbide, which comprises the following steps: heating green silicon carbide or black silicon carbide with a purity of 95%-99% to 1400 DEG C-2000 DEG C under a vacuum environment and keeping the temperature for 1-2 hours to obtain heat-treated silicon carbide powder, and then performing acid pickling treatment on the heat-treated silicon carbide powder through a mixed acid solution, so that the purity of the obtained silicon carbide reaches 3N-5N. The composite impurity removal process of the application, which comprises heat treatment first and then acid pickling, can achieve the same impurity removal effect as traditional long-time high-temperature heat treatment under the condition of lower heat treatment temperature and equal heat preservation time, and can significantly reduce energy consumption, working hours and comprehensive purification cost, and solve the industry pain points of high energy consumption, long cycle and inability to produce in batches in different grades in the traditional process.

The invention discloses a non-oxide composite reinforced slag ladle spray coating and a preparation method thereof, and relates to the technical field of metallurgical auxiliary materials. The foaming material is prepared from the following components in parts by weight: 10-15 parts of polysilazane modified phenolic resin, 3-5 parts of anhydrous potassium sodium borate, 2-4 parts of nano silicon carbide sol, 2 parts of silicon nitride micro powder, 0.5-2 parts of coated microcapsule foaming agent, 66-77.5 parts of non-oxide main body reinforcing phase, 1-2 parts of suspending agent and 1-2 parts of slag-resistant aid. The non-oxide main body reinforcement phase is formed by mixing black silicon carbide and micro-expanded crystalline flake graphite according to the weight ratio of 9: 4; according to the invention, a high-performance slag ladle spray coating system is constructed, and a non-oxide main body reinforcement phase and various auxiliaries are compounded, so that various properties are improved, and the service life of a slag ladle is prolonged; a targeted preparation process is designed, so that the components are fully dispersed and fused, the resin modification effect is guaranteed, the problem of dry material agglomeration is solved, the slurry performance is accurately regulated and controlled, the use performance consistency is guaranteed, and the construction efficiency is improved.

This invention discloses a room-temperature curing high-temperature, high-emissivity coating, formed by spraying a coating containing fillers and a film-forming agent. The fillers include black silicon carbide, molybdenum silicide, and praseodymium oxide-modified tantalum silicide. The film-forming agent is polysiloxane reinforced with nano-silicon carbide whiskers. The filler content in the coating is 70%–80% by mass. This invention also discloses a method for preparing the above-mentioned room-temperature curing high-temperature, high-emissivity coating, comprising uniformly mixing the film-forming agent, fillers, and organic solvent to obtain a coating; spraying the coating onto the surface of a substrate and curing at room temperature for 48–72 hours to obtain the room-temperature curing high-temperature, high-emissivity coating. The high-temperature, high-emissivity coating of this invention can be prepared at room temperature and used at high temperatures, with a maximum operating temperature of 1650℃ and a high-temperature emissivity of 0.88–0.90, which has important guiding significance for the research of high-temperature radiation heat dissipation coatings.

The invention belongs to the technical field of power semiconductor processes, and particularly relates to a black silicon photoelectric four-quadrant structure capable of reducing crosstalk and a preparation method. Comprising an N-low dopant silicon region; the N + front surface high-concentration doped regions are symmetrically arranged on the two sides of the front surface of the N-low dopant silicon region; the P-type doped region is arranged close to the inner side of the N + front high-concentration doped region on each side; the N + back surface high-concentration doped region is arranged on the back surface of the N-low dopant silicon region; the black silicon region is uniformly formed in the N + back high-concentration doped region in the four quadrants so as to form a light trapping structure; the crosstalk blocking region is formed between the adjacent black silicon regions in the four quadrants; the passivation layer and the back metal film layer are sequentially filled on the black silicon region and the crosstalk barrier region from inside to outside; and a front metal electrode. The problems that an existing conventional silicon photoelectric four-quadrant detector is poor in near-infrared band response and crosstalk exists between pixels are solved.