573 results about "Black silicon" patented technology

The invention relates to a high-speed resin heavy-load grinding wheel and a preparation method thereof. In the method, special material formulas of an outer grinding layer, core material and a hole core are designed separately, wherein used materials include four parts, namely a binding agent which is special for a high-performance modified high-polymer-based phenolic resin grinding wheel and prepared from phenolic resin, new phenolic resin and polysulfone resin, grinding materials such as fused zirconia alumina, alumina sintering corundum and black silicon carbide, fillers such as pyrite, cryolite and calcium carbonate (lime), and reinforcing materials such as mixed fine-particle-size grinding material, fiber, steel rings (local reinforcement) and the like; and a two-phase reinforced compound technology and structure are used to prepare the high-speed resin heavy loading grinding wheel. In the invention, the tensile strength, the folding strength and the grinding rate of the grinding wheel are greatly improved; under heavy load, the grinding range condition has wide adaptability, the linear speed is high, and the primary grinding rate is up to 1cm in thickness, so that the difficulty that the traditional grinding wheel can not be suitable for heavy load grinding of steel billets and steel material is better solved, and the need of increasing development of the steel industry is met.

The invention discloses a maskless method for preparing black silicon by deep reactive ion etching, which comprises the following steps: performing initialization and plasma stability on equipment adopted by the method for preparing the black silicon so as to make plasma perform glow discharge; and controlling technological parameters for preparing the black silicon by deep reactive ion etching, and adopting etching and passivating modes to alternately process a silicon chip, wherein the parameters comprise plasma gas flow, panel etching power, panel passivating power, coil power, and etching and passivating cycle and temperature. The maskless method directly performs plasma processing on the surface of the silicon chip, and can generate large-range high-intensity nanostructures on the surface of the silicon chip in case of no nano mask by adjusting and selecting proper etching technological parameters. Meanwhile, the method for preparing the black silicon has high efficiency and low cost, and can be integrated with other micro-fabrication technology.

The invention provides a resin abrasive cutting wheel and a manufacturing method thereof, belonging to the field of grinding tools. The resin abrasive cutting wheel solves the problem that the traditional brown corundum resin grinding wheel has low cost but bad cutting performance. The resin abrasive cutting wheel comprises a grinding body and a reinforcing sheet which is arranged inside the grinding body to reinforce the rotation strength of the grinding body, wherein the grinding body comprises the following raw materials in proportions by weight: 62-70% of brown corundum, 4-10% of black silicon carbide, 18-20% of phenolic resin and the balance of packing. The invention also provides a manufacturing method of the resin abrasive cutting wheel. According to the manufacturing method, the cutting performance of the abrasive cutting wheel is increased by increasing a special proportion of black silicon carbide under the condition that the cost is not increased.

The invention relates to a silicon detector structure with a wide spectral response range, which comprises an n-type silicon substrate, a silicon dioxide medium masking layer, a p-type doping layer, a front surface contact electrode, an antireflection film layer, a broad-spectrum absorbing black silicon layer, a medium passivating layer and a back surface contact electrode, wherein a circular groove is arranged on the surface of the n-type silicon substrate; the silicon dioxide medium masking layer is formed around the circular groove on the surface of the n-type silicon substrate, and the middle of the silicon dioxide medium masking layer is an annular structure; the p-type doping layer is arranged in the circular groove of the n-type silicon substrate; the front surface contact electrode is produced on the inner wall of the annular structure of the silicon dioxide medium masking layer and covers the partial edge of the surface of the annular structure to form an annular structure; the antireflection film layer is produced in the annular structure of the front surface contact electrode and covers the surface of the p-type doping layer; the broad-spectrum absorbing black silicon layer is produced on the back surface of the n-type silicon substrate; the medium passivating layer is point-type and is formed on the surface of the broad-spectrum absorbing black silicon layer; and the back surface contact electrode is produced on the surface of the broad-spectrum absorbing black silicon layer and covers the point-type medium passivating layer.

The invention provides a thermopile infrared detector and an array thereof. The thermopile infrared detector comprises a supporting part, a thermocouple part and an infrared absorption part. The supporting part comprises a supporting column and a cavity, the thermocouple part is suspended above the supporting part, a cold end of the thermocouple part is connected with the supporting column, and the infrared absorption part is positioned above the thermocouple part and connected with a hot end of the thermocouple part. Correspondingly, the invention further provides a preparation method of the thermopile infrared detector. The infrared absorption part and the thermocouple part of the thermopile infrared detector are not coplanar, the area of the infrared absorption part is unlimited by thermocouple number, and the infrared absorption part can maximally cover the whole thermocouple part, so that infrared absorption efficiency can be improved. An infrared absorption layer is made of black silicon materials, the preparation method is compatible to semiconductor IC (integrated circuit) process, and accordingly preparation cost of the detector can be lowered.

The invention discloses a thermal insulating decorative ceramic plate produced by comprehensive utilization of perlite waste and a production method thereof. A matrix formula consists of: 25%-100% of perlite micropowder, 20%-80% of expanded perlite micropowder, 2%-25% of Guangdong black mud, 0%-10% of limestone, 0.1%-5% of fluorite, 0.1%-2% of black silicon carbide, 0.5%-15% of bentonite, 0.1%-5% of sodium metasilicate nonahydrate, 0.1%-0.5% of sodium humate, and 0.1%-1.0% of sodium tripolyphosphate. A glaze formula consists of: 50-90% of expanded perlite powder, 50-90% of low temperature frit, 0.1-5% of zinc oxide, 0.1-5% of fluorite, 0-5% of apatite, 0.1-2.0% of sodium tripolyphosphate, 0.5-5% of kaolin, and 0.1-0.5% of sodium methyl cellulose. The production method is characterized by naked firing in a roller kiln at a low temperature of 900DEG C-1050DEG C. After firing, the thermal insulating decorative ceramic plate with a water absorption rate of less than 0.5%, a volume density of less than 500kg/m<3>, a rupture modulus of greater than 3.5Mpa, a thermal conductivity coefficient of less than 0.08/W/(m.k), and a combustion level of A can be obtained.

The invention relates to a method for preparing a polycrystalline black silicon suede in a single-sided by a metal catalytic chemical etching method. The method is characterized by comprising the following steps: (1) stacking two original silicon chips, and inserting in a same clamping groove; (2) removing a surface damage layer, and neutralizing in an acid pickling manner; (3) depositing silver particles in a hydrofluoric acid solution containing silver nitrate by using the silicon chips, corroding by using the hydrofluoric acid and hydrogen peroxide mixed solution, and forming a nanoscale hole on the crystal surface; (4) soaking the corroded silicon chip in the hydrogen peroxide and ammonia water mixed solution, and removing residual silver particles; (5) chambering the silicon chip in achambering solution, and expanding the nanoscale hole formed by the crystal surface to form a submicron order hole; (6) alkali cleaning, acid pickling, and cleaning the silicon chips, and separatingthe every two stacked silicon chips; and (7) acid pickling and cleaning the separated silicon chips, and drying the silicon chips. The suede structure obtained by the method provided by the inventionenables a battery to have an excellent antireflection effect, and by combining a passivation layer with high surface quality, an effective black silicon solar cell can be prepared.

The invention relates to the field of fabrication of a solar cell, in particular to a surface passivation and anti-reflection technology of crystalline silicon cell for improving photoelectric conversion efficiency. Aiming at the existing cell technology process flow, nanometer lamination of a material such as SiO2, Al2O3 and SiNx and a composite material are fabricated by atomic layer deposition and plasma atomic layer deposition, passivation layer plating is carried out on the front surface and the back surface of the crystalline silicon cell, so that the minority carrier lifetime is prolonged, and the photoelectric conversion efficiency of the cell is improved; and SiNx anti-reflection layer plating can be continuously carried out after passivation layer plating, so that passivation and anti-reflection processes can be integrated in the same flow, the cost is reduced, and the yield is improved. The fabrication method is particularly and suitably used for combining with a black silicon technology, and multiple processes are avoided; and moreover, for a double-sided battery, the fact that double-sided passivation is carried out by using the fabrication method is a necessary choice.

A wafer edge cleaning system that includes a wafer dry etching chamber and one or more irradiation sources preferably positioned inside the wafer dry etching chamber. The irradiation source such as laser generates a beam aimed at the periphery of the wafer to melt any defects, in particular, black silicon at the edge of the wafer. Preferably, the wafer is mounted on a rotating platform. The invention further provides a method for removing black silicon at the edge of a semiconductor wafer that includes the steps of: patterning the wafer with a trench mask layer; etching the wafer to form a trench thereon; exposing the edge of the wafer to a laser beam to melt the black silicon thereon; stripping the mask and cleaning the wafer.

The invention discloses a back-illuminated Si-PIN photoelectric detector taking a black silicon material as a photosensitive layer and a manufacturing method thereof, belonging to the technical field of photoelectric detection. The photoelectric detector comprises a silicon intrinsic substrate, a P-type area located in the centre of the front surface of the silicon intrinsic substrate, an annularP+ area located around the front surface of the silicon intrinsic substrate, an N-type black silicon layer located on the back surface of the silicon intrinsic substrate, upper electrodes located on the upper surface of the P-type area and the P+ area, and lower electrodes located on the two sides of the lower surface of the N-type black silicon layer. According to the invention, the black silicon material is used as the photosensitive layer, and an annular P+ area 3 is increased around the P-type area 2 so that the back-illuminated Si-PIN photoelectric detector disclosed by the invention canabsorb light waves of near-infrared band and has higher light absorptivity and wider response band than a traditional Si photoelectric detector; the manufacturing process is relatively simple and hasthe characteristics of low cost, fast response speed, high responsiveness and wide response band, is easy to realize integration, and has obvious advantages in large-scale marketization.

The invention relates to a method for preparing black silicon based on liquid-phase chemical reaction, comprising the following steps of: placing a silicon slice in a corrosive solution; then adding a metal compound to the corrosive solution; and carrying out texturing treatment on the surface of the silicon slice through ion etching reaction under catalysis to form a black silicon material with a microstructural surface. By carrying out surface texturing of a nano scale on the silicon surface, the band absorption and reflectivity of the product can be effectively controlled so that the conversion efficiency of a silicon-based solar battery can be improved. The method can be applied to preparing large-area black silicon material, and the surface of the prepared black silicon material contains microstructures, such as a silicon microcolumn, a silicon particle, silicon microholes and the like. The light absorption of the black silicon material in the wavelength range of 300-2000nm can be up to over 90%, and the light absorption in the wavelength range of 300-800nm can be up to over 95%.

The invention discloses a method for preparing black silicon by using metallic copper ion auxiliary etching, comprising the following steps of (1) preparing an etchant solution which is a mixed solution composed of hydrofluoric acid, hydrogen peroxide and cupric nitrate; (2) placing a monocrystalline or polycrystalline silicon wafer into the etchant solution which contains metallic copper ions, and controlling the temperature of the etchant solution and the reaction time; and (3) taking out the reacted silicon wafer, washing the silicon wafer with an oxidative acid liquor to remove metallic residues, washing, with ionized water, and drying the silicon wafer so as to obtain a black silicon material. Monocrystalline or polycrystalline silicon surfaces are etched in a texturing manner by the catalytic action of the metal copper ions, and the black silicon material with uniform nano-pores at the surface is prepared, so that the reflectivity of monocrystalline or polycrystalline silicon materials in a light absorption waveband is obviously reduced, and conversion efficiency of silicon-based solar cells is improved.

The invention discloses a preparation method, based on a solution method, of a polycrystalline solar cell. The method includes the steps: (1) preparing a black silicon structure of the surface of a silicon oxide through a metal assisted chemical etching (MACE) technology; (2) performing optimized processing for the black silicon structure through a nano-structure rebuilding (NSR) solution so that an uniform reverse pyramid structure is formed; (3) changing the sheet resistance after diffusion and the thickness of a silicon nitride passive film on the nano-structure; and (4) forming a silicon oxide/silicon nitride dual-layer passive structure through liquid phase processing and PECVD. The prepared reverse pyramid anti-reflection structure has a better anti-reflection effect compared with a worm type structure formed by acid texturing, and is easier to passivate compared with a nano-black silicon structure, and is an ideal black silicon anti-reflection structure. The preparation method can prepare a polycrystalline solar cell that is low in reflectivity and high in conversion efficiency. Compared with a conventional cell process, the process of the method is simple, only adopts liquid phase processing, is low in cost, and is suitable for industrialized batch production.

The invention discloses an inverted pyramid structure of a polysilicon surface and a fabrication method of the inverted pyramid structure. The method comprises the following steps: preparing black silicon by different methods; rinsing a sample in a mixed liquid of hydrogen peroxide and ethanol amine; and carrying out retreatment on the washed black silicon in a mixed liquid of hydrogen peroxide, hydrofluoric acid, metaphosphoric acid and ammonium fluoride, so as to form the inverted pyramid structure of the polysilicon surface. A wet-chemical method which is different from acid and alkaline corrosion is adopted. According to the method, the effects of anisotropy can be reduced to the maximal extent; and the black silicon with different nano-structures can be corroded into a nano textured structure with a regular inverted pyramid structure through oxidation. Compared with the traditional polycrystalline silicon texture, the polysilicon inverted pyramid light-trapping structure disclosed by the invention is relatively high in light utilization rate and relatively low in reflectivity, so that the polysilicon inverted pyramid light-trapping structure has the characteristics of the inverted pyramid structure; compared with the traditional high surface recombination of a small and dense structure of the black silicon, the surface recombination is obviously reduced; and the efficiency of a solar cell is higher.

The invention provides a one-step wet black silicon preparation and surface treatment method, which comprises the steps of enabling a silicon wafer with a surface damage layer being removed to be immerged into a corrosive liquid so as to prepare black silicon through reaction, wherein the corrosive liquid is a mixed aqueous solution of a metal ion containing concentrated hydrofluoric acid, an oxidizing agent and a high-molecular polymer; and enabling the black silicon to be immerged into a surface treatment corrosive liquid so as to carry out surface optimization treatment, and acquiring a silicon wafer with a sub-micrometer structure and uniform texturing, wherein the surface treatment corrosive liquid is an additive containing mixed acid aqueous solution. The wet black silicon preparation method provided by the invention is simple in process and low in cost, the texturing surface of the black silicon after corrosion treatment is uniform and has no sharp boundary, and the reflectivity is 7-15%. The one-step wet black silicon preparation and surface treatment method greatly improves the absorption efficiency of a silicon cell for light, a solar cell prepared by using the black silicon prepared according to the method has low cell electric leakage rate, stable open-circuit voltage and high conversion efficiency.

The invention discloses a method for manufacturing a coated abrasive of a finished superhard material. The method comprises the following steps: singeing, rinsing, striking, soaking, coating, stretching and shaping, uncoiling, trade mark printing, primer coating, electrostatic sand-planting, pre-baking, composite adhesive coating, pre-drying, drying, coiling, flexing, shunt winding, slicing, adhesive coating, model loading, and shaping and curing. The substrate is made from polyester; substrate finishing agent is prepared from phenolic resin cementing agent and plenolic resin binder in the volume ratio of 180 to 100; the substrate is stretched while the substrate is dried at the temperature of between 200 and 220 DEG C; a grinding material is prepared from zirconia aluminum oxide and black silicon carbide; and the binder is prepared from phenol, 37 percent formaldehyde, 86 percent paraformaldehyde, NaOH and water in the volume ratio of 400 to 372 to 198 to 9.2 to 12. The method not only can save energy and reduce consumption, but also can improve the manufacture efficiency; and the coated abrasive tools of the finished superhard material manufactured by the method not only resists abrasion, but also has good stability of the substrate.

The invention discloses a method for manufacturing a non-refrigerant thermal infrared detector based on a black silicon material. The method comprises the following steps of: forming a thermosensitive diode on a silicon substrate or a silicon-on-insulator (SOI) substrate; depositing an amorphous silicon film on the surface of the thermosensitive diode, and performing sulfur element doping on the amorphous silicon film in an ultrafast laser irradiation mode or sulfur element ion implantation and ultrafast laser irradiation modes in the presence of sulfur elements to form a black silicon infrared absorbing layer; depositing a silicon nitride thin layer on the black silicon infrared absorbing layer to be used as a surface passivation layer; and preparing a metal conducting wire and a cantilever beam structure with a thermal insulation effect for the thermosensitive diode to form the non-refrigerant thermal infrared detector. In the method, the characteristics that the black silicon material has high infrared irradiation absorbability and is compatible with a micro-electronic processing process easily are fully utilized, and the manufactured thermal infrared detector has the advantages of high sensitivity and low cost and is easy to manufacture through an SOI complementary metal oxide semiconductor (CMOS) process and a CMOS process.

The invention provides a method for producing a light-weight heat-insulating decorative ceramic plate by using solid waste in the production and processing course of expanded pearlite. The light-weight heat-insulating decorative ceramic plate is prepared from the following materials: 25-100 percent of pearlite micro powder, 0-80 percent of expanded pearlite micro powder, 0-25 percent of Guangdong black clay, 0-10 percent of limestone, 0-5 percent of fluorite, 0.1-2 percent of black silicon carbide, 0-15 percent of bentonite, 0-5 percent of anhydrous sodium metasilicate, 0.1-0.5 percent of sodium humate and 0-1.0 percent of sodium tripolyphosphate. The batches are subjected to ball-milling and then slurry screening, slurry deironing, slurry aging, spray drying, powder aging, decorative distributing, dry-pressing forming, dry transporting and 900-1,050 DEG C oxidation burning are conducted to obtain the light-weight heat-insulating decorative integrated ceramic plate of which the water absorption is within 0.5%, the volume density is smaller than 500 kg/m<3>, the rupture modulus is more than 3.5 MPa, the heat conductivity is smaller than 0.08/(m/k) and the burning level is A.

The invention discloses a texturing method of diamond wire slice polycrystalline black silicon. The texturing method comprises the following steps in turn: a silicon chip is arranged in a solution containing nitric acid and hydrofluoric acid to be preprocessed; the preprocessed silicon chip is arranged in a solution containing metal salt to perform pre-deposition of oxidized metal nanoparticles; the silicon chip after pre-deposition is arranged in a solution containing hydrofluoric acid and an oxidizing agent to perform deposition of the oxidized metal nanoparticles; the silicon chip after deposition is arranged in a solution containing hydrofluoric acid, the oxidizing agent and metal salt ions to perform longitudinal and transverse broaching corrosion; the silicon chip after broaching is arranged in an acid solution to remove the metal ions; and the silicon chip of which the metal ions are removed is arranged in an alkaline solution containing a texturing additive to perform modification of the nanostructure so as to form the final textured surface. The non-uniformity and the chromatic aberration of the appearance after texturing can be effectively avoided.

A black silicon based metal-semiconductor-metal photodetector includes a silicon substrate and a black silicon layer formed on the silicon substrate. An interdigitated electrode pattern structure is formed on the black silicon layer, which can be a planar or U-shaped structure. A thin potential barrier layer is deposited at the interdigitated electrode pattern structure. An Al or transparent conductive ITO thin film is deposited on the thin potential barrier layer. A passivation layer is provided on the black silicon layer. In the black silicon based metal-semiconductor-metal photodetector, the black silicon layer, as a light-sensitive area, can respond to ultraviolet, visible and near infrared light.

The invention discloses a solar cell having a double-sided micro/nano composite structure and a preparation method thereof. The solar cell comprises a first micro/nano composite structure which is positioned on the front of the solar cell and a second micro/nano composite structure which is positioned on the back of the solar cell; the first micro/nano composite structure comprises a doped diffusion layer which is manufactured on the surface of a silicon-based substrate, a front micro-scale light absorption layer corroded on the doped diffusion layer, and a front nano-scale black silicon antireflection layer etched on the front micro-scale light absorption layer; the second micro/nano composite structure comprises a back micro-scale light absorption layer corroded on the lower surface of the silicon-based substrate, and a back nano-scale black silicon antireflection layer etched on the back micro-scale light absorption layer. The problems that a black silicon material layer replaces the micro-scale light absorption layer, and the absorption range of the solar spectrum is widened but the conversion efficiency is low in the traditional black silicon solar cell structure are solved.

The invention relates to a method for preparing a black silicon structure with low cost, and belongs to the technical field of photoelectricity. The method comprises the following steps of (1) precleaning a solution; (2) putting the cleaned silicon chip into a mixing solution of H2O2 (hydrogen peroxide), HF (hydrogen fluoride), AgNO3 (silver nitrate), Cu(NO3)2 (copper dinitrate) and ultrapure water, and etching, so as to prepare a black silicon nanometer antireflection structure; (3) optimizing the black silicon structure by a nanometer reconstruction solution, so as to form a uniform inverted pyramid-shaped structure. The method has the advantages that the polycrystalline silicon is performed with chemical etching by an Ag-Cu bimetallic assisting type; compared with the existing Ag-assisted chemical etching type, the consumption amount of AgNO3 is decreased by more than several dozens of times; the technology is simple, the preparation cost of black silicon is reduced, and the batch preparation of large-area black silicon is reduced; the black silicon structure is optimized by the nanometer reconstruction solution, and the huge application potential is realized in the preparation of black silicon solar batteries with high conversion efficiency.