43 results about "Black silicon" patented technology

The invention discloses an ultra-weak light detection system and method based on an SPAD array and time correlation photon counting, and belongs to the technical field of ultra-weak light detection. A multi-channel SPAD array detection unit; a time-to-digital conversion module; the photon arrival time analysis unit comprises a TCSPC model, a noise modeling and suppression module and a self-adaptive convolution filter; a data compression and fitting module; a spatial denoising filter; an output unit; and a master control processing unit. Based on a multi-channel SPAD array detection unit, a time-to-digital conversion module, a TCSPC model, a noise modeling and suppression module, a self-adaptive convolution filter and the like, high-sensitivity imaging and quantitative detection of materials (such as black silicon) with extremely low reflectivity are realized. The system has the advantages of being good in real-time performance, high in time resolution, high in signal-to-noise ratio, high in on-chip processing capacity, high in integration and the like, and meanwhile the bottleneck of a traditional TCSPC method for large-scale photon data processing is solved.

The invention discloses a black silicon broadband photoelectric detector based on alternating current photovoltaic effect optimization. The device comprises an alternating-current photovoltaic effect unit, a core light absorption layer, a heterostructure building layer, a top electrode and a bottom electrode, the alternating-current photovoltaic effect unit is used for generating a periodic flash field, irradiating the periodic flash field on the surface state of the heterogeneous pn junction to capture or release transient charges, and collecting the transient charges to perform ultra-high-sensitivity optical detection; the core light absorption layer is made of a black silicon material and is used for improving light absorption through a surface micro-nano structure, widening the light absorption range and providing a surface state as an active site for capturing or releasing transient charges in an alternating current photovoltaic effect; the heterostructure layer and the core light absorption layer form a heterogeneous pn junction so as to construct a built-in electric field to promote generation, separation, migration and recombination of carriers. According to the invention, the characteristics of wide spectral response, ultrahigh sensitivity, low dark current and zero-bias working can be realized, high-precision detection can be carried out under weak light, and the development of high-precision technology is facilitated.

The present invention discloses a pyroelectric photodetector based on black silicon carbide ceramics and a pyroelectric optical power meter / pyroelectric optical energy meter using the pyroelectric photodetector. The pyroelectric photodetector includes a heat-conducting plate (21) made of black silicon carbide ceramics, one surface of which is a light-absorbing surface (211). A thermopile (22) or a series-connected conductive metal layer (302) is installed on either side of the heat-conducting plate (21) to form the pyroelectric photodetector. By using black silicon carbide ceramics simultaneously as the heat-conducting plate (21) and the light absorber, the pyroelectric photodetector is directly combined with the thermopile (21) or the series-connected conductive metal layer (302), simplifying the structure of the pyroelectric photodetector. At the same time, black silicon carbide ceramics have a high thermal conductivity coefficient, a small thermal expansion coefficient, high heat resistance, a high laser damage threshold, and the light absorbing surface can be cleaned by polishing, which reduces the failure rate of pyroelectric photodetectors and significantly extends their service life.

This invention belongs to the field of semiconductor material manufacturing technology, specifically relating to a black silicon nanoforest structure, its preparation method, and its applications. The invention involves depositing a silicon-rich silicon nitride thin film via PECVD, followed by chemical etching using gaseous HF (VHF) to form a uniform silicon forest structure. This method eliminates the need for metal catalysts and masks, removing metal contamination and physical damage. The process is simple and controllable, making it suitable for the industrial production of large-area black silicon.

The invention discloses an S and Se co-doped silicon-based near-infrared photosensitive material based on picosecond laser-ion implantation and a preparation method and application thereof, and belongs to the technical field of semiconductor optoelectronic materials. A preparation method of an S and Se co-doped silicon-based near-infrared photosensitive material based on picosecond laser-ion implantation comprises the following steps: depositing an Se-doped film on the surface of a silicon substrate by adopting a vacuum deposition process, and then preparing black silicon with a micro-nano composite structure through picosecond laser scanning; and performing sulfur ion implantation modification on the black silicon with the micro-nano composite structure, and annealing to prepare the S and Se co-doped silicon-based near-infrared photosensitive material. Through a picosecond laser-ion implantation composite doping process, the problems of thermal damage and lattice defects in a traditional doping method are successfully solved, and preparation of the S and Se co-doped silicon-based near-infrared photosensitive material with high concentration and low defects is realized. The light absorptivity of the material at the wave band of 1300nm is remarkably improved, a process scheme capable of realizing mass production is provided for third-generation photovoltaic devices and high-performance infrared detectors, and the material has important application value and wide market prospects.

The application discloses a kind of S, Se co-doped silicon-based near-infrared photosensitive materials based on picosecond laser-ion implantation and preparation method and application, belong to semiconductor optoelectronic material technical field;A kind of S, Se co-doped silicon-based near-infrared photosensitive materials based on picosecond laser-ion implantation preparation method, comprising the following steps: using vacuum deposition process is deposited Se doped film on the surface of silicon substrate, then by picosecond laser scanning preparation obtains the micro-nano composite structure black silicon;Sulfur ion implantation modification is carried out to the micro-nano composite structure black silicon, annealing, and the S, Se co-doped silicon-based near-infrared photosensitive material is prepared.The application is successfully solved the problem of thermal damage and lattice defect in traditional doping method by the composite doping process of picosecond laser-ion implantation, realizes the preparation of S, Se co-doped silicon-based near-infrared photosensitive material with high concentration and low defect.The light absorption rate of the material at 1300nm band is significantly improved, which provides a mass production process scheme for the third generation photovoltaic device and high-performance infrared detector, and has important application value and broad market prospect.

The present application relates to a new type of stainless steel core double-sided PVT hybrid electric heating assembly, the new type of stainless steel core double-sided PVT hybrid electric heating assembly includes heat transfer inner core, the heat transfer inner core is packed with heat preservation frame around, the heat transfer inner core one side from inside to outside is sequentially provided with insulating layer, PV cell piece and transparent film, the battery piece group both sides are provided with first EVA adhesive film and second EVA adhesive film respectively, the heat transfer inner core other side is provided with the light transmission glass that can be detachably connected with the heat preservation frame, the light transmission glass and the heat transfer inner core between air layer is reserved, the PV cell piece is black silicon PERC cell, the battery has full spectrum operating characteristics, and after secondary annealing process, it has lower temperature attenuation coefficient, can work long-term under high temperature, the electric heating assembly structure is reasonable, and has the effect of high temperature resistance, in actual use, the electric heating radiation conversion rate of electric heating product is greatly strengthened, and it is suitable for promotion and use.

The invention discloses a high-response small-junction capacitance black silicon composite material, a preparation method and a photoelectric detector, the high-response small-junction capacitance black silicon composite material comprises a substrate base material, a micro-nano conical B-Si structure is etched on the substrate base material, a PtTe2 film layer is deposited and covered on the surface of the micro-nano conical B-Si structure, the photoelectric detector is a four-quadrant photoelectric detector, and the PtTe2 film layer is deposited and covered on the surface of the micro-nano conical B-Si structure. And an isolation groove is formed in the boundary region of the four quadrants by adopting a P + injection process to realize electrical isolation. According to the invention, PtTe2 with defect passivation capability is adopted to modify the surface of B-Si, and the composite state density of the surface of B-Si can be reduced, so that the photoresponse of a near-infrared band is enhanced, dark current is inhibited, and a device can realize high photoresponsivity in a 1064nm band; meanwhile, the P + injection technology is adopted in the boundary areas of the four quadrants to form highly-doped groove structures, potential barriers can be formed, diffusion and migration of photon-generated carriers among different quadrants are prevented, crosstalk among the quadrants in the four-quadrant detector is reduced, and the device has the characteristics of low noise and high signal-to-noise ratio and is suitable for weak light detection scenes.

The present invention provides a method for preparing black silicon, comprising: after completing the induction processing of the previous processing path, focusing a laser beam to form a first light spot on the surface of the current processing path, thereby performing a first induction processing on the current processing path, so that the surface of the current processing path forms a micron-scale structure; after the first induction processing is completed, forming a second light spot on the surface of the current processing path with a negative defocus, thereby performing a second induction processing on the current processing path, so that the surface of the current processing path forms a nanometer-scale structure. The method for preparing black silicon provided by the present invention can reduce the protection requirements for materials during laser processing and reduce the use of hazardous chemicals.

The invention provides a method for improving a super junction power device IGSS failure, and relates to the technical field of power device super junction yield improvement. Comprising the following steps: determining that a failure parameter of a failure area is IGSS according to a wafer test or a wafer receiving test result; determining a plurality of failure reasons for the IGSS; according to the first failure reason, determining a plurality of corresponding formulated schemes, and executing the plurality of formulated schemes to determine a plurality of corresponding execution results; according to the silicon nails in the unit area, determining that the failure morphology has relevance with black silicon distribution generated by a preset etching process; obtaining an optimal etching process formula when correlation exists, and optimizing the bottom of the failed morphology according to the optimal etching process formula; by adjusting the gas ratio, the smooth and silicon-nail-free optimal morphology is obtained within the angle morphology within the preset range, and the EAS capability limit window of the optimal morphology is determined. In this way, IGSS 1V failure is improved, and the yield of mass production is greatly improved.

Disclosed is a high-throughput droplet plasmonic metasurface biochip based on wettability technology, comprising a black silicon super-hydrophobic region and a plasmonic metasurface region, the black silicon super-hydrophobic region comprising a substrate layer and a nano-spur layer connected to the surface of the substrate layer, and the structure of the plasmonic metasurface region from bottom to top comprising a substrate layer, a nano-pore structure layer and a metal film layer; the droplet plasmonic metasurface biochip provided by the application further accelerates the biological functionalization process in the biological detection step due to its wettability technology, and reduces the amount of reagent, effectively overcoming the problems of high cost and low efficiency of traditional biological detection, and providing a stable manufacturing method for the droplet plasmonic metasurface biochip, which combines wettability technology with plasmonic metasurfaces, and makes a significant contribution to subsequent mass production of more practical droplet plasmonic metasurface biochips.

The present application relates to paper tube processing technical field, specifically said is a kind of high-precision paper tube cutting equipment and control system, equipment rack is equipped with black silicon carbide ceramic lining support cylinder, coaxially into paper tube interior, realize full stroke rigid support, heat conduction and absorb CO2 laser, avoid metal mandrel reflection, thermal expansion and stagnation defects;External adjustable pressure roller drives paper tube rotation, lead screw driven laser cutting assembly axial movement ring cutting, lining cylinder integrated dust hole cooperate negative pressure dust removal.Control system PLC built-in ceramic heat-conducting thermal deformation compensation model, combined with real-time temperature dynamic correction cutting coordinates and laser power, matched with multiple sensor hierarchical safety monitoring, over-threshold automatic alarm stop.The present application solves the problems of traditional laser cutting pipe wall collapse, thermal shrinkage size deviation, optical components are easily damaged, dust fire risk and other high problems, cut flat no carbonization, adapt to optical film, adhesive tape and other high-precision paper tube batch processing.

The invention discloses black spherical silicon as well as a preparation method and application thereof, and relates to the technical field of copper-clad plates. The black spherical silicon provided by the embodiment of the invention has a core-shell structure, a shell layer is a silicon dioxide layer, a core layer is an amorphous silicon dioxide composite material, and the black spherical silicon can give consideration to dielectric loss and peel strength by regulating and controlling the content of surface active groups under unit mass to meet a specific range; and the thickness of the silicon dioxide of the shell layer accounts for 0.4-12% of the overall size, so that the absorption capacity of the powder to ultraviolet light is controlled, the reflective rate R is less than or equal to 10%, and the withstand voltage is greater than or equal to 5KV. The black spherical silicon provided by the invention has the characteristics of low dielectric loss and low reflective rate, and can reduce dielectric loss, reduce signal attenuation and improve stability after being used for a copper-clad plate.

The invention discloses a wide-spectrum high-uniformity black silicon integrated nanogold quadrant detector and a preparation method thereof, the wide-spectrum high-uniformity black silicon integrated nanogold quadrant detector comprises a substrate base material, a micro-nano conical B-Si structure is etched on the substrate base material, gold nanoparticles are deposited and covered on the surface of the micro-nano conical B-Si structure, the photoelectric detector is a double-four-quadrant photoelectric detector, and the thickness of the double-four-quadrant photoelectric detector is larger than that of the micro-nano conical B-Si structure. And the boundary area of the double four quadrants is electrically isolated by etching deep grooves and filling oxygen-silicon compounds to form isolation grooves. The gold nanoparticles are compounded on the surface of B-Si, hot electrons can be excited through a localized surface plasma resonance mechanism and injected into a black silicon conduction band to participate in the photoelectric conversion process, the band gap limitation of the B-Si material is broken through, wide spectral response is achieved, the response capability in a near-infrared region is improved, and the photoelectric conversion efficiency is improved. And meanwhile, a silicon oxide and silicon nitride passivation film is introduced to the surface of the black silicon and gold nanoparticle composite structure, and a surface carrier recombination process is inhibited by filling dangling bonds and defect states on the surface of the black silicon pointed cone structure, so that the dark current level of the device is reduced.

The application provides a high-thermal-conductivity heating element and a preparation method thereof. The high-thermal-conductivity heating element is prepared from first black silicon carbide powder, second black silicon carbide powder, flaky graphite, polyvinyl alcohol aqueous solution and a small amount of high-thermal-conductivity MgO sintering aid. The particle sizes of the first black silicon carbide powder and the second black silicon carbide powder are different, and the particle size ratio of the first black silicon carbide powder and the second black silicon carbide powder satisfies the Horsfield filling relationship. The application uses two silicon carbide powder raw materials with different particle size distributions, so that the D50 index satisfies the Horsfield filling relationship, the small-particle-size silicon carbide powder can be filled in the gaps formed by the particle accumulation of the large-particle-size silicon carbide powder, the forming density of the pressed silicon carbide heating sheet blank is improved, the requirement for realizing the densification of the heating sheet through the shrinkage of the later high-temperature sintering is reduced, the sintering temperature is reduced, and the loss of the flaky graphite in the sintering process is avoided.

The application discloses a black silicon-based fluorescent microsphere, a preparation method and application of an immunochromatography reagent card, relates to the technical field of immunochromatography detection, and the preparation method comprises the following steps: silicon-based solid part preparation, fluorescent doping, microsphere forming, microsphere purification and surface modification. The prepared black silicon-based fluorescent microsphere has the characteristics of high biocompatibility of a silicon-based material, high sensitivity of a fluorescent microsphere and low background interference of a black base, and the detection performance of the immunochromatography reagent card is remarkably improved.

The present application belongs to the technical field of nitride ceramics. The present application provides a black silicon nitride ceramic and a preparation method thereof. The preparation method comprises the following steps: mixing silicon nitride, niobium oxide, a dispersing agent and water to obtain a slurry; sequentially performing sand milling, drying and sieving on the slurry to obtain silicon nitride nano-powder; sequentially performing dry pressing pre-forming and cold isostatic pressing forming on the silicon nitride nano-powder to obtain a ceramic blank; and performing hot pressing sintering on the ceramic blank to obtain the black silicon nitride ceramic. The black silicon nitride ceramic prepared by the present application enriches the color of silicon nitride ceramic, has a dense structure, is a hexagonal crystal, has a hardness greater than 17.9 GPa, has a toughness greater than 11.0 MPa·m 1 / 2 , has excellent mechanical properties, and has a strength higher than 1830 MPa; compared with the zirconium oxide ceramic commonly used for the back plate of a mobile phone, the black silicon nitride ceramic has a smaller density, a lighter texture and a more smooth signal transmission; and the preparation method is simple and has a low cost.

The invention relates to black silicon carbide porous ceramic with low light reflection and low resistivity and a preparation method thereof. The black silicon carbide porous ceramic with low light reflection and low resistivity comprises a silicon carbide main body phase, a boron carbide sintering aid phase, a light absorption phase and a communicated pore phase, wherein the light absorption phase comprises a metal oxide or a combination of the metal oxide and kaolin; preferably, the metal oxide comprises a transition metal oxide; more preferably, the transition metal oxide comprises at least one of Fe3O4, Fe2O3, MnO2, MnO, Cr2O3 and TiO2, and the transition metal oxide comprises at least one of Fe2O3, Fe2O3, MnO2, MnO, Cr2O3 and TiO2.

The utility model discloses a thermochromic film-coated cover plate, which comprises a glass substrate, a thermochromic ink layer, wherein the thermochromic ink layer is arranged on one side of the glass substrate; the black silicon carbide coating layer is arranged on one side, far away from the glass substrate, of the thermochromic ink layer. The heat discoloration film-coated cover plate can reduce the risk of falling off from a product shell.

The utility model discloses a device for reducing optical interference of a chip. A three-axis electric displacement platform is arranged in a framework of the equipment, an electric sucker is arranged at the bottom of the three-axis electric displacement platform, feeding and discharging windows are respectively arranged on two sides of the three-axis electric displacement platform, a feeding bracket and a finished product bracket are correspondingly arranged on the inner wall of the three-axis electric displacement platform, a chip clamp is arranged at the top of the bracket, a piezoelectric micro sprayer and a spraying frame are further arranged in the framework, and a black silicon storage bin is arranged at the top and connected with the sprayer through a conveying pipe. During working, the three-axis electric displacement platform transfers a chip, the metering pump accurately controls the conveying amount of a black silicon material, the array type piezoelectric micro spray head with the adjustable spray head diameter performs uniform spraying, and the optical sensor monitors the spraying condition in real time. The equipment effectively overcomes the defects of a traditional method, not only can accurately and efficiently reduce the optical interference of the chip and improve the performance and quality of the chip, but also has relatively high practical value and market prospect due to reasonable structural design and convenience in operation, observation and maintenance.

A method of fabricating a patterned mask on a silicon wafer includes grind-polishing a pre-cut silicon wafer; ion beam figuring the grind-polished silicon wafer, transferring a coronagraphic pattern to a surface of the ion beam figured silicon wafer; and in a cryogenic deep reactive ion etching process, applying black silicon to exposed silicon regions of the ion beam figured silicon wafer. The cryogenic etching process is used to fabricate black silicon to achieve a high aspect ratio structure with higher etch rate than conventional reactive ion etching.

The invention belongs to the technical field of semiconductor material manufacturing, and particularly relates to a black silicon nano forest structure and a preparation method and application thereof. According to the method, the silicon-rich silicon nitride film is deposited through PECVD (Plasma Enhanced Chemical Vapor Deposition), and gaseous HF is introduced by utilizing VHF for chemical corrosion, so that a uniform silicon grass structure is formed. The method does not need a metal catalyst and a mask, metal pollution and physical damage are eliminated, the process is simple and controllable, and the method is suitable for industrial production of large-area black silicon.

Microfluidic unit (1) comprising: a substrate (5) defining a microfluidic channel (10) with a sealed section (12) having a sealed cross-section, wherein the sealed section has: a fluid path (14) formed by a wetting area; and a non-wetting area (16) extending along and adjacent to the liquid path (14), wherein the non-wetting area is designed to provide a vent for emptying a gas from the wetting area along the non-wetting area, wherein the non-wetting area comprises black silicon.

Vertical ITO / black silicon photodetector and preparation method thereof, relate to the technical field of photoelectric device imaging, and particularly to a preparation technology of a high-performance vertical ITO / black silicon visible-near infrared photodetector. The photodetector is based on an n-type silicon substrate, and the front surface is a p-type layer with high doping concentration. The n-type layer on the back surface of the device is a supersaturatedly doped black silicon layer, and a transparent electrode ITO is covered on the surface of the black silicon to improve the surface characteristics of the black silicon microstructure, suppress surface recombination, and enhance the separation of carriers, so as to improve the photoelectric response performance of the photodetector. The device structure is vertical, and has high integration. By using ITO as the electrode on the surface of the black silicon microstructure, surface recombination can be well suppressed, the separation of photo-generated carriers can be enhanced, the device has high photoelectric response performance, and has important application prospects in the development of low-cost silicon-based infrared detectors.

The application discloses a graphene / black silicon photoelectric composite detector structure which integrates advantages of black silicon and graphene, and belongs to the technical field of photoelectric detection. The graphene / black silicon photoelectric composite detector structure comprises a Si substrate (5), a heavily doped layer (3) located on the surface of the Si substrate (5), a graphene layer (2) located above the heavily doped layer (3), an upper electrode (1) arranged on the upper surface of the graphene layer (2), and a metal lower electrode (4) covering the lower surface of the Si substrate (5); and the graphene layer (2) and the upper electrode (1) form an ohmic contact. The graphene / black silicon photoelectric composite detector structure solves the problems of low carrier extraction efficiency of a traditional black silicon photoelectric detector and limited wavelength detection range of a traditional silicon photoelectric detector, and can improve the performance of a silicon-based detector.

A black silicon carbide ceramic based thermoelectric photodetector, and a thermoelectric optical power meter / thermoelectric optical energy meter using same. The black silicon carbide ceramic based thermoelectric photodetector comprises a thermal conduction plate (21) made of a black silicon carbide ceramic, wherein the surface of one side of the thermal conduction plate (21) is an optical absorption surface (211); and a thermopile (22) or a series connection conductive metal layer (302) is arranged on the surface of either side of the thermal conduction plate (21) to constitute the thermoelectric photodetector. In the thermoelectric photodetector, the black silicon carbide ceramic is used as both the thermal conduction plate (21) and a light absorber, and is directly combined with the thermopile (22) or the series connection conductive metal layer (302) to constitute the thermoelectric photodetector, thereby simplifying the structure of the thermoelectric photodetector.

The application discloses a grinding wheel cutting piece for cutting an amorphous magnetic core or an iron core and a preparation method, and relates to the field of cutting equipment. The grinding wheel cutting piece comprises green silicon carbide, black silicon carbide, phenolic resin liquid, phenolic resin powder, PVC liquid H-1622, auxiliary materials and diiron trioxide. The phenolic resin liquid comprises PR-55729 and PR-940, the phenolic resin powder comprises PR-217 and PR-5195, and the auxiliary materials comprise white corundum, calcium carbonate, garnet and single-crystal corundum. The special phenolic resin liquid, the phenolic resin powder and the PVC liquid are adopted, the production forming capacity of the grinding wheel cutting piece is improved, the thickness precision control and the flatness improvement are easily achieved, the thickness precision error of the cut product is small, the product quality consistency is high, secondary manual and equipment grinding are not needed, the sharpness of the cutting piece is obviously improved, the cutting piece replacement frequency is reduced, the work efficiency is improved, harmful smoke and dust are not generated during cutting, and the product is good for human health.

The invention discloses an anti-glare high-efficiency micro-display light source based on a resonant cavity light-emitting diode, and belongs to the field of semiconductor photoelectrons. The laser comprises black silicon (100), an upper electrode (200), an isolation layer (300), a current expansion layer (400), an upper Bragg reflector (500), an oxidation limiting layer (600), a resonant cavity (700), a lower Bragg reflector (800), a substrate (900) and a lower electrode (1000) from top to bottom. Wherein the upper Bragg reflector and the lower Bragg reflector are formed by periodically and alternately arranging high-refractive-index materials and low-refractive-index materials. The logarithm of the lower Bragg reflectors (800) is larger than the logarithm of the upper Bragg reflectors (500). The structure of the resonant cavity (700) comprises a limiting layer (701) and an active region (702). The surface of the chip is covered with black silicon, glare interference is eliminated, the light extraction efficiency is improved in combination with the resonant cavity structure in the vertical direction, the single-pixel working current is reduced through the AlAs oxidation limiting layer inside, and the anti-glare and high-efficiency light source suitable for micro display can be achieved.

The invention discloses a photoelectrocatalysis material based on a black silicon / copper / MOFs composite structure and a preparation method of the photoelectrocatalysis material. The photoelectrocatalysis material comprises a black silicon substrate, a metal copper layer and an MOFs layer, wherein the metal copper layer and the MOFs layer sequentially cover the surface of the black silicon substrate. The photoelectrocatalytic material can catalyze CO2 to be efficiently converted into a multi-carbon product under the conditions of illumination and an electric field. The invention further discloses application of the photoelectrocatalytic material in photoelectrocatalytic reduction of carbon dioxide.