Additive for chambering acid liquid for texturing polycrystal black silicon and application of additive

A technology of additives and pore-expanding acid, which is applied in the field of additives for pore-expanding acid liquid for polycrystalline black silicon texturing, and can solve the problem of the decline in acceptance of black silicon texturing, the influence of the uniformity of nano-textured surface, and the rapid response of pore-expanding treatment and other problems, to achieve the effect of improving battery efficiency, uniform appearance, and crystal flower color tending to be consistent

Active Publication Date: 2016-11-16
CHANGZHOU SHICHUANG ENERGY CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Hole reaming treatment generally adopts reaming acid solution, currently commonly used reaming acid solution is a single-component acid solution or a mixture of several acids (such as a mixture of nitric acid and hydrofluoric acid), although these pore reaming acid solutions can To a certain extent, the purpose of hole expansion is achieved, but the reaction of hole expansion treatment is too fast and difficult to control, which affects the uniformity of the nano suede surface; at the same time, the anisotropic corrosion of the hole expansion acid will make the surface of black silicon serious, Seriously affected the appearance of polycrystalline black silicon, greatly reducing the user's recognition of black silicon texture

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  • Additive for chambering acid liquid for texturing polycrystal black silicon and application of additive
  • Additive for chambering acid liquid for texturing polycrystal black silicon and application of additive

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[0030] The specific implementation manners of the present invention will be further described below in conjunction with the drawings and examples. The following examples are only used to illustrate the technical solution of the present invention more clearly, but not to limit the protection scope of the present invention.

[0031] The technical scheme of concrete implementation of the present invention is:

[0032] The invention provides an additive for polycrystalline black silicon pore-expanding acid solution, the mass percentage of each component is: polyvinyl alcohol 0.5%-2%, triethanolamine 1%-5%, tartaric acid 1% ~3%, silane coupling agent 0.5%~2%, the balance is water.

[0033] Preferably, the silane coupling agent is selected from one or more of KH550, KH560 and KH570.

[0034] Preferably, the water is deionized water.

[0035] The present invention also provides a pore-enlarging acid solution for polycrystalline black silicon texture, which contains an acid solutio...

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Abstract

The invention provides an additive for chambering acid liquid for texturing polycrystal black silicon. The additive comprises the following components in percentage by mass: 0.5%-2% of polyvinyl alcohol, 1%-5% of triethanolamine, 1%-3% of tartaric acid, 0.5%-2% of a silane coupling agent and the balance of water. The invention further provides the chambering acid liquid adopting the additive and a method for texturing polycrystal black silicon. By adding the additive into the chambering acid liquid, the reaction of the chambering treatment can be decelerated, and the reaction rates of the chambering acid liquid on crystal surfaces of the polycrystal black silicon can be furthest kept consistent, so that the anisotropic corrosion is inhibited, crystal patterns of the polycrystal black silicon are obviously improved, and the appearance superiority and the performance superiority of the black silicon are embodied.

Description

technical field [0001] The invention relates to an additive for hole-expanding acid liquid for making texture of polycrystalline black silicon and its application. Background technique [0002] At present, in the polycrystalline black silicon texturing process, the method of metal-assisted wet chemical etching is more and more widely used, and the method of metal-assisted wet chemical etching can prepare polycrystalline black silicon with nano-holes . [0003] Metal-assisted wet chemical etching generally uses metal ions. Since the metal particles are relatively small, only a few nanometers to tens of nanometers, the corresponding nanopores formed on polycrystalline black silicon have a pore size of only a few nanometers to tens of nanometers. In order to increase the coverage of the textured surface, reduce the recombination of the silicon wafer surface, and improve the electrical performance of the cell, it is necessary to expand the polycrystalline black silicon obtained...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/10C30B29/06C23F1/24
CPCC09K13/06C30B29/06C30B33/10
Inventor 章圆圆裴银强
Owner CHANGZHOU SHICHUANG ENERGY CO LTD
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