41results about How to "Uniform suede" patented technology

The invention provides a polycrystalline black silicon texturization treatment fluid. The polycrystalline black silicon texturization treatment fluid comprises a hydrofluoric acid solution, a hydrogen peroxide solution and a metal salt, wherein a volume ratio of the hydrofluoric acid solution to the hydrogen peroxide solution is 1-25:5-40, the mass fraction of hydrofluoric acid in the hydrofluoric acid solution is 40-50%, the mass fraction of hydrogen peroxide in the hydrogen peroxide solution is 20-55%, the metal salt is at least one of copper nitrate, silver nitrate, palladium nitrate, copper chloride, auric chloride acid, chloroplatinic acid, potassium chromate and nickel sulfate, and the mole concentration of the metal salt is 1-10<5>[mu]mol/L. The invention also provides a polysilicon chip texturization method applying the polycrystalline black silicon texturization treatment fluid, and a polycrystalline black silicon texturization product.

The invention provides a texturing preprocessing solution of a diamond wire cutting polycrystalline silicon wafer. The texturing preprocessing solution is a mixed solution of nitric acid, hydrofluoric acid, acetic acid and water with the volume ratio being 10-15:1-5:2-6:10-30. The invention further provides a texturing preprocessing method of the diamond wire cutting polycrystalline silicon wafer. The method includes: the texturing preprocessing solution is used to process the surface of the diamond wire cutting polycrystalline silicon wafer to form a multi-hole silicon structure, namely a deeper damage layer so as to obtain a texturing preprocessing silicon wafer. The invention further provides a texturing method of the diamond wire cutting polycrystalline silicon wafer, the method performs conventional texturing processing on the texturing preprocessing silicon wafer, an even and low-reflectance textured surface is formed on the surface of the silicon wafer, and the diamond wire cutting polycrystalline silicon wafer textured product is acquired. The invention further provides the texturing preprocessing silicon wafer and the diamond wire cutting polycrystalline silicon wafer textured product.

The invention provides a honeycomb-shaped wet-method black-silicon texturing structure and a preparing method thereof and a black-silicon cell and a preparing method thereof, and relates to the technical field of black-silicon cell preparing. The preparing method of the honeycomb-shaped wet-method black-silicon texturing structure includes the steps that a diamond-wire polycrystalline silicon slice is subjected to hole digging operation through a wet-method black-silicon-tank hole digging device; products after hole digging operation is completed are subjected to hole expanding operation through a RENA chain-type device, NH3.H2O and H2O2 are added into alkaline wash liquid in an alkaline wash tank of the RENA chain-type device, and H2O2 is added into acid wash liquid of an acid wash tank.The ideal honeycomb-shaped wet-method black-silicon texturing structure with the excellent quality can be prepared, existing polycrystal production devices are fully used, and the device procurement/improvement costs are effectively reduced. The black-silicon cell prepared with the method is good in appearance performance and excellent in electric performance and has the large market popularization value.

The invention provides a texturing preprocessing method of a diamond wire cut polycrystalline silicon chip. The method comprises the following step of preprocessing the diamond wire cut polycrystalline silicon chip by phosphorus diffusion under the temperature of 850 to 900 DEG C to form an N type heavily-doped layer with square resistance of 40 to 100 ohm/Sq on the surface layer of the silicon chip so as to obtain a textured preprocessed silicon chip. The invention further provides a texturing method of the diamond wire cut polycrystalline silicon chip. The textured preprocessed silicon chip is textured generally to form a uniform and low-reflectivity textured surface so as to obtain the diamond wire cut polycrystalline silicon chip textured product. The invention also provides the textured preprocessed silicon chip and the diamond wire cut polycrystalline silicon chip textured product.

The invention discloses a texturing process for a polycrystalline silicon solar cell slice. The texturing process comprises the following steps of (1) spraying a layer of silicon dioxide particles on the surface of a silicon wafer; (2) carrying out primary texturing in a mixed solution containing nitric acid and hydrofluoric acid; (3) deacidifying in a sodium hydroxide solution; (4) carrying out secondary texturing in a mixed solution containing nitric acid and hydrofluoric acid; (5) deacidifying again in a sodium hydroxide solution. The solar cell slice produced by using the process is low in reflectivity, uniform in fabric surface and increased in photoelectric conversion efficiency.

The invention provides a cleaning liquor for a silicon chip. The cleaning liquor contains a potassium hydroxide liquor with concentration being 45% and a hydrogen peroxide liquor with concentration being 31%, wherein the volume ratio of the potassium hydroxide liquor to the hydrogen peroxide liquor is 1:1.05-1:7.25. Cleaning equipment for the silicon chip comprises an ultrasonic cleaning part usedfor removing granular silicon powder; a chemical cleaning part used for removing grease, metal ions and organic impurities, a first rinsing part used for removing chemical remaining on the surface ofthe silicon chip, a cleaning liquor cleaning part used for removing organic matter with the cleaning liquor for the silicon chip, a second rinsing part used for removing the cleaning liquor remainingon the surface of the silicon chip as well as a slow pulling part used for removing water on the surface of the silicon chip, so that water stains do not remain on the surface of the silicon chip. The invention further provides a cleaning process for the silicon chip on the basis of the cleaning equipment. The cleaning liquor, the cleaning equipment and the cleaning process for the silicon chip have the beneficial effects that the silicon chip surface cleaning effect is improved, cleaning efficiency and cleaning quality are improved, cleaning cost is saved, inspection proves that dirty chip rate is reduced obviously, and texture surface of the silicon chip is uniform and free of dirt after texture etching.

The invention discloses a removing device for a diamond wire cutting damage layer on the surface of a multicrystalline wafer, which is lower in cost and can form a better suede. The removing device comprises a support, a headless belt, a driving wheel and a driven wheel, wherein the headless belt bypasses the driving wheel and the driven wheel and is tightened by the driving wheel and the driven wheel; the headless belt is horizontally arranged, and a supporting platform is arranged between the headless belt positioned on an upper layer and the headless belt positioned on a lower layer; the upper surface of the supporting platform is a smooth plane; the headless belt positioned on the upper layer is in contact with the upper surface of the supporting platform; a sandblasting apparatus is arranged above the supporting platform. By using the sand blasting device, the diamond wire cutting damage layer of the multicrystalline wafer can be effectively removed, and uniform suede, low reflectivity and better suede quality of a finally-obtained silicon wafer are guaranteed; in addition, by using the device, the streamline operation can be realized, the efficiency is higher, and the production cost of the multicrystalline wafer can be greatly reduced. The removing device is suitable for popularization and application in the technical field of processing of silicon wafers.

The invention relates to a cleaning technology in solar battery production process, concretely to a monocrystalline silicon wafer pre-cleaning method which can completely and effectively clean off smudginess from monocrystalline silicon incoming materials. The pre-cleaning method comprises three technical steps of first-time fluid preparation, cleaning and fluid supplementation. The method overcomes the disadvantages of the prior art and is capable of completely removing smugness, fingerprints, organic matter residues and the like from monocrystalline silicon wafers manufactured with different technologies and by different manufacturers without affecting any indexes of the monocrystalline silicon wafers. By using the method, good pile faces are obtained through pile-face manufacturing, pile-face making time is shortened, drug amount needed for pile-face making is reduced and surface clearness of the monocrystalline silicon wafer cleaned through the abovementioned steps meets class A wafer standard.

The invention relates to the field of silicon wafer cleaning, particularly to the field of silicon wafers after diamond wire cutting. The method for cleaning a silicon wafer after diamond wire cutting is carried out according to the following steps: 1. a step of cleaning the silicon wafer cut by a diamond wire in a citric acid aqueous solution; 2. a step of cleaning the silicon wafer in an alkaline cleaner; and 3. a step of cleaning the silicon wafer in hydrogen peroxide. A weak acid activation process is added before alkaline cleaning, so that metal ions remaining on the surface of the silicon wafer are less, a hydrogen peroxide cleaning process is added after alkaline cleaning to remove surface residual alkaline liquor, organic matter and metal ions, and at the same time, a surface damaged layer is better removed. The coverage rate of pyramid suede of the silicon wafer is relatively high in a subsequent battery etching process, and the suede is relatively uniform.

The invention relates to the technical field of machining, in particular to a triggering agent applicable for etching treatment of a solar cell. The triggering agent is prepared from 5 parts of polydimethylsiloxane, 5 parts of ethyl acetate, 0.5 part of alantolactone, 5 parts of methyl salicylate, 5 parts of sodium chloride and 79.5 parts of water according to the following steps of: firstly, adding 5 parts of polydimethylsiloxane, 5 parts of ethyl acetate and 50 parts of water to a vessel and stirring the mixture for 10 minutes; secondly, slowly adding 0.5 part of alantolactone and 5 parts of methyl salicylate, stirring the mixture with adding, and stirring the mixture for 10 minutes after addition is completed; and finally, adding 5 parts of sodium chloride and 29.5 parts of water at one time, thereby obtaining the triggering agent. In the triggering agent, a few amount of the alantolactone is added, so that the processing efficiency of the triggering agent can be remarkably improved; by using the triggering agent in a matching way, etching surfaces of a battery substrate subjected to surface etching and side-wall protection are uniform and consistent; with a method of addition step by step, the dissolving performance among substances can be improved, and the possibility of particle agglomeration also can be prevented.

The invention relates to a process for washing single crystal silicon wafers in solar cell production, in particular to a method capable of cleanly and effectively washing off fingerprints on the single crystal silicon wafers during transfer. The method comprises the steps as follows: (1) adding 150-160 L of de-ionized water into a process tank with the volume of 150-180 L, increasing the temperature of water in the process tank, and keeping the temperature to be 15-25 DEG C; preparing various chemicals, adding 16 L of HF (Hydrogen Fluoride) (electronic grade), and uniformly stirring with a PP (Propene Polymer) long bar to obtain a prepared solution for use; and (2) placing the single crystal silicon wafers with the sizes of 125*125 into bearing boxes, placing the bearing boxes into a big flower basket to serve as a batch of the single crystal silicon wafers, requiring the number of the single crystal silicon wafers in each batch to be 300-400, placing the big flower basket with the single crystal silicon wafers into the process tank with the prepared solution in the step (1), soaking for about 200-300 s, and taking out the single crystal silicon wafers in the big flower basket, so that the washing process is finished.