Method for reworking monocrystal colored spot sheet

A color spot and single crystal technology, applied in the field of crystalline silicon solar cell production, can solve the problems of affecting production efficiency, reducing conversion efficiency, and scrapping, so as to reduce the number of degraded or scrapped silicon wafers, improve conversion efficiency, and reduce production costs Effect

Inactive Publication Date: 2012-06-27
ZHEJIANG FORTUNE ENERGY
View PDF3 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the texturing process, abnormal phenomena such as high debris rate, color spots, and flower basket printing often occur, which affect production efficiency, reduce conversion efficiency, and even lead to degradation or scrapping, increasing production costs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for reworking monocrystal colored spot sheet
  • Method for reworking monocrystal colored spot sheet
  • Method for reworking monocrystal colored spot sheet

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0013] Below in conjunction with accompanying drawing, specific embodiment of the present invention is described in further detail:

[0014] The invention provides a method for reworking a single crystal color patch comprising the following steps:

[0015] 1. Sorting out the color spots, and placing one or two silicon wafers in each slot of the quartz boat;

[0016] 2. Place the quartz boat with the silicon wafer in a diffusion furnace without a source, and treat it at a temperature of 830±0.5°C for 5-10 minutes at a high temperature, so that the organic matter can be volatilized to achieve the purpose of removing stains;

[0017] 3. Put it in deionized water for ultrasonic cleaning or alkali cleaning at room temperature. The frequency of ultrasonic wave is 80KHZ, the power is 1800W, and the cleaning time is 0-8min. The purpose is to remove the dirt adsorbed on the surface of the silicon wafer;

[0018] 4. Place the cleaned silicon wafer in a mixed solution of alkali and IPA ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method for reworking a monocrystal colored spot sheet. The method comprises the steps of performing high-temperature treatment in a diffusion furnace, performing ultrasonic cleaning, flocking, pickling, rinsing, spin-drying and the like, and specifically comprises the following steps of: (1) sorting the colored spot sheet, putting the sorted colored spot sheet into the diffusion furnace passive, and treating in a certain temperature range for several minutes; (2) putting the colored spot sheet subjected to high-temperature treatment into deionized water for ultrasonic cleaning; (3) putting the cleaned silicon sheet into an alkali and IPA mixed solution with certain concentration, and performing alkali flocking in a flocking tank within a certain temperature range; and (4) pickling, rinsing and spin-drying the flocked silicon sheet, and finishing flocking. According to the method for treating the colored spot sheet produced by flocking a crystalline silicon solar battery, a colored spot phenomenon can be eliminated effectively; the obtained flocked surface is uniform; the conversion efficiency of a reworked sheet is improved; and the production cost is reduced effectively.

Description

technical field [0001] The invention relates to the technical field of manufacturing crystalline silicon solar cells, in particular to a process method for reworking stained patches of crystalline silicon solar cells after texturing. Background technique [0002] With the continuous reduction of fossil energy and the aggravation of environmental pollution, the research and development, promotion and use of new energy have received great attention. Among them, as one of the new energy sources, solar energy is most likely to become the leading new energy source due to its abundance and cleanliness. At present, among many types of solar cells, crystalline silicon solar cells have become the dominant ones. Improving the conversion efficiency of cells and reducing costs are our research hotspots. [0003] The current industrialized crystalline silicon solar cell manufacturing process includes texturing, diffusion, etching, PSG removal, PECVD, screen printing, sintering, and clas...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18C30B33/10
CPCY02P70/50
Inventor 侯为来王卫军王庆钱
Owner ZHEJIANG FORTUNE ENERGY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products