7results about How to "Reduce surface reflectivity" patented technology

This disclosure relates to the field of solar cell manufacturing technology, and discloses a method for fabricating a solar cell and the solar cell itself. The fabrication method includes: providing a substrate layer with a first textured surface; forming an anti-reflection passivation layer on the surface of the substrate layer, the anti-reflection passivation layer conformally covering the first textured surface; laser-treating the anti-reflection passivation layer to form a second textured surface, the second textured surface including multiple micro-recesses; and forming a repair passivation layer on the laser-treated surface of the anti-reflection passivation layer to repair laser damage introduced by the laser treatment, the repair passivation layer conformally covering the second textured surface. This disclosure can ensure the passivation effect of the cell while improving the light-trapping effect of the cell surface.

The invention discloses a preparation method of a low-reflection germanium-based antireflection film system for infrared long waves. The preparation method comprises the following steps: S1, cleaning an accompanying plating sheet serving as a germanium substrate of a lens and a product before plating, and preparing three film materials of Ge, ZnS and YbF3; s2, the cleaned lens is put into a tool clamp, the tool clamp with the lens is hung into a cavity of a coating machine, and vacuumizing baking and film material pre-melting are carried out; s3, cleaning the lens by an ion source; s4, under the vacuum condition, the first face of the lens is sequentially plated with a first Ge film layer, a second ZnS film layer, a third Ge film layer, a fourth ZnS film layer, a fifth Ge film layer, a sixth ZnS film layer, a seventh YbF3 film layer and an eighth ZnS film layer, the eight film layers form a film system, and ion source auxiliary deposition is used for all the film layers; s5, keeping at constant temperature after plating; s6, cooling and part taking; and S7, repeating the steps S1 to S6, and plating the same film system on the second surface of the lens. Therefore, the transmittance of the wave band of 8-14 microns can be improved, and the surface reflectivity can be reduced at the same time.

This invention relates to the field of high-strength steel surface treatment technology, and particularly to a surface treatment liquid, a steel plate for hot stamping without shot blasting, hot stamped parts, and a method for preparing the same. The invention provides a surface treatment liquid, with a total mass of 100 parts, comprising 5-30 parts of water-based resin, 1-60 parts of nano-aluminosilicate and / or modified nano-aluminosilicate, 1-10 parts of surfactant, and the balance being water; the nano-aluminosilicate and / or modified nano-aluminosilicate simultaneously contains Si and Al elements. Applying the surface treatment liquid provided by this invention to the surface of a metal-coated hot stamping steel plate results in a uniform and controllable oxide layer on the surface of the parts obtained after hot stamping, eliminating the need for an additional shot blasting process and avoiding related problems associated with shot blasting, while also meeting the requirements for subsequent welding and electrophoresis.

The invention relates to the technical field of texturing additives for monocrystalline silicon wafers, and discloses a texturing additive for a pyramid textured monocrystalline silicon wafer and a preparation method of the texturing additive. Comprising the following raw materials in parts by mass: 1-1.5 parts of organic sulfonate, 1-2 parts of a polyamine high-molecular compound, 1-2 parts of a high-molecular polymer, 0.5-1 part of a surfactant, 0.2-0.5 part of a composite additive and 90-110 parts of deionized water. The composite additive contains a large number of carboxyl groups, hydroxyl groups and amino groups, the adsorption performance of the texturing additive on the surface of the monocrystalline silicon wafer can be enhanced, then a uniform pyramid structure is formed, the reflectivity is reduced, and the contained modified nano titanium dioxide can form a nano composite film on the surface of the monocrystalline silicon wafer, so that the texturing effect is improved. And the surface roughness and the scattering effect are further improved.

A preparation method of a vertical incidence type Si-based Si / SiGe HPT with a periodic light control unit belongs to the technical field of semiconductor photoelectronics, and comprises the following steps: growing a Si / SiGe HPT epitaxial structure on a p-type Si-based substrate, including the steps of compounding a base region, depositing a mask layer, manufacturing the periodic light control unit, etching an emitter region, a base region and a collector region table top, and depositing an electrical isolation layer; and etching the optical window and the contact hole, sputtering metal Ti / Au after overlay, and stripping and annealing with glue to form a metal electrode. The periodic light-operated unit is utilized to couple vertical incident plane waves into transverse transmission waves, the absorption efficiency of a Si / SiGe HPT absorption region is enhanced, the reflectivity of incident light of a specific wave band on the surface is reduced, meanwhile, the PN junction capacitance area is reduced, rapid working of a device is facilitated, and on the premise that the thickness of an absorption layer is not changed, the performance of the device is improved. And responsivity and efficiency of the detector are considered.

The invention discloses an LED device with high environment contrast and high luminous efficiency. Comprising a substrate, a carrier plate, an LED chip, a lead and packaging glue. A step-shaped through hole is formed in the middle of the base plate; a plurality of electrodes are arranged inside or on the surface of the substrate; the electrodes comprise a first electrode, a second electrode and a third electrode; the upper surface of the carrier plate is fixed with the lower surface of the substrate through a first binder; the LED chip is provided with an electrode surface, a light-emitting surface and a plurality of side surfaces, the electrode surface is electrically connected with the third electrode through the lead, and the light-emitting surface of the LED chip is fixed with the carrier plate through a second binder; and the packaging adhesive is filled in the step-shaped through hole. According to the invention, a novel packaging structure design is adopted, so that the light absorption of the packaging adhesive to the LED chip is avoided, and the LED device has the advantages of high environmental contrast and high light emitting efficiency at the same time.

The application discloses a high-haze anti-dazzle film and a preparation method thereof. The coating solution of the anti-dazzle layer of the high-haze anti-dazzle film comprises acrylic resin oligomers and anti-dazzle particles. The high-haze anti-dazzle film has excellent anti-environmental light, high transmittance and integral black effect, and can effectively solve the problem that the existing high-haze anti-dazzle film cannot be compatible with high transmittance and integral black effect.