129results about How to "Reduce surface reflectivity" patented technology

The invention discloses a preparation method of polycrystalline black silicon of a micro-nano composite suede structure. The method comprises the following steps: imbedding polycrystalline silicon chips into etchant solution to obtain polycrystalline silicon chips with micro-meter suede structures; transferring the polycrystalline silicon chips with the micro-meter suede structures into a metal ion compound solution to deposit metal nanoparticles on the micro-meter suede; transferring into an etching solution to etch so as to obtain the polycrystalline silicon chips with the micro-nano composite suede structures; washing to remove metal particles residual on the surface; feeding into an alkaline solution to modify and etch the micro-nano composite suede structure; then drying to obtain the product. According to the method, the wet chemical etching method is carried out to prepare the micro-nano composite suede structure on the surface of the polycrystalline black silicone; such structure is extremely low in reflectivity; meanwhile, the preparation method is highly compatible with the general polycrystalline silicon suede preparation process; therefore, the preparation method can be quickly applied to the current general polycrystalline black silicon solar cell industry; the light absorbing efficiency can be obviously raised, and as a result, the efficiency of a solar cell is increased.

The invention provides a method for preparing porous silicon dioxide antireflective film with controllable refractive index, which adopts the method of first base catalysis and then acid catalysis for preparing coating liquid and is suitable for dip coating or spraying process or spin-coating method. Porous silicon dioxide basement film layer is coated on a base plate; and the base plate with porous silicon dioxide basement film layer is processed under high temperature so as to obtain the silicon dioxide film layer. The film layer which is prepared by the invention has the advantages of high hardness, high chemical stability, good self-cleaning capability and broadband antireflection.

The invention provides a method forming nanometer array, which comprises a template with a plurality of nanometer holes; which is characterized in that pressing art is performed on a macromolecule base material for the template; the template is stripped, thereby a plurality of bulges on the macromolecule base material are formed.

The invention discloses a process for manufacturing monocrystalline silicon solar cell texture with low surface reflectivity, comprising the steps of: washing silicon slices to remove damage on surfaces of the silicon slices; putting the washed silicon slices into a mixed solution formed by KOH and isopropanol to form a pyramid structure with equal size on the surfaces of the silicon slices; and putting the silicon slices with pyramid structure into the mixed solution formed by HF and Fe(NO3)3 for corrosion so as to form porous silicon on surface of the pyramid structure. The manufacturing process of the invention is simple, and the corrosion liquid is inexpensive; and the manufacturing process is compatible with the prior art and the surface reflectivity of the processed silicon slices islow, and can be less than 5 percent.

The invention relates to the manufacturing field of solar batteries, in particular to a polycrystalline silicon surface wool manufacturing method for solar batteries. The invention has the technical scheme that the polycrystalline silicon surface wool manufacturing method is characterized by successively adopting the following steps: 1) pre-cleaning a silicon wafer and removing an affected layer;2) adopting the ultrasonic atomization process or electrostatic spraying process to coat one layer of discontinuous plastic particle film on the surface of the silicon wafer to serve as a masking film; 3) putting the silicon wafer in acid solution and aqueous alkali for corrosion and wool manufacturing; and 4) cleaning the silicon wafer obtained in step 3) with acetone to remove plastic particle films, then cleaning with deionized water, and drying the silicon wafer. By adopting the scheme, the invention overcomes the defects and deficiencies in the prior art, and provides the polycrystallinesilicon surface wool manufacturing method. The method can be used for manufacturing high-performance polycrystalline silicon surface texture, has industrialization prospect and effectively lowers thesurface reflectivity of the silicon wafer.

A method of forming micro-pore structures or trench structures on a surface of a silicon wafer substrate comprises (A) forming at least a noble-metal alloy particle on the surface of the silicon wafer substrate; and (B) then followed by employing a chemical wet etching on the surface of the silicon wafer substrate. During the processes, noble-metal alloy particle is used to catalyze the oxidation of the silicon wafer substrate surface in contact therewith, and an etchant is used to simultaneous etch the silicon dioxide to result in local micro-etching at the surface of the silicon wafer substrate, thereby forming micro-pore structures or trench structures on the surface of the silicon wafer substrate. Surface reflectivity of the silicon chip substrate can be effectively reduced. The method increases the power conversion efficiency of the solar cells and reduces the manufacturing costs so as to increase the production benefits of the solar cells.

The invention discloses a method for preparing a texture of a silicon solar cell under a magnetic field. The method comprises the following technological steps: firstly, a polysilicon wafer is put into a texture preparation reactor with prepared acid reaction solution for reaction, and the texture preparation reactor is put in the magnetic field, wherein, the reaction solution is made from 0.05%-15% of nitric acid or chromic acid by mass, 1%-30% of hydrofluoric acid by mass and 1%-30% of phosphoric acid or acetic acid by mass; the temperature of the reaction solution is kept at 0-30 DEG C, and the polysilicon wafer is washed in 0.5%-3% sodium hydroxide solution for 1-5 minutes after reaction in the acid solution; secondly, the magnetic field is applied in the whole course of preparing the texture of the silicon solar cell, the magnetic field strength is kept at 0-10T, and the texture preparation time is 1-45 minutes. A compact and even texture can be grown on the surface of the polysilicon wafer by the method, thus realizing the high-efficiency and even production of the silicon solar cell texture by acid oxidants under the magnetic field.

The present invention provides a silicon solar cell surface light trapping structure and a preparation method thereof, and relates to a novel polycrystalline silicon acid texturing process, wherein addition of a certain proportion of an organosilicon surfactant is adopted, the whole acid texturing process can be controlled with citric acid, a textured structure having a specific structure is formed, and a large amount of micro corrosion pits are generated inside the ordinary worm-like structure of the textured structure, wherein a length of the large corrosion pit is 2-10 mum, a width of the large corrosion pit is 1-5 mum, a depth of the large corrosion pit is 0.5-2 mum, a length of the small corrosion pit is 100-500 nm, a width of the small corrosion pit is 100-500 nm, and a depth of the small corrosion pit is 0.2-0.5 mum. With the present invention, texturing reflectivity can be reduced by 2-3%.

The invention relates to a measuring system for the expansion coefficient of a material. The measuring system is characterized by comprising two solid microchip laser feedback interferometer optical systems and an electrical logging and electric control system, wherein a heating furnace is arranged between the two solid microchip laser feedback interferometer optical systems and comprises a furnace chamber; a cavity is formed in the furnace chamber; a perforating hole is symmetrically formed in the two opposite sides of the cavity outward respectively; a perforating hole packaging structure is fixedly arranged at the outer end part of each perforating hole; a window plate is fixed outside each perforating hole packaging structure through a window plate clamping seat; a sample table device capable of accommodating a sample to be measured is further arranged in the cavity body; a heating element and a temperature sensor are fixedly arranged on the inner wall of the furnace chamber in a suspended mode. The measuring system for coefficient of liner expansion has the advantages of complete non-contact, high precision, large temperature measuring range and high resistance to shock, and is particularly suitable for a relatively low surface reflecting material. The measuring system can be widely applied to large temperature range and high precision measurement of expansion coefficient of various materials.

The invention provides a color filter sheet. The color filter sheet comprises a transparent substrate, a black matrix layer and a color filter film layer. The black matrix layer is disposed on the transparent substrate, the thickness of the black matrix layer is smaller than or equal to 0.7 microns, the black matrix layer comprises a first shading layer and a second shading layer. The second shading layer is disposed on the first shading layer and is a black metal layer, and the color filter film layer is disposed on the transparent substrate and the second shading layer of the black matrix layer. The light density of the black matrix layer of the color filter sheet is high, the layer thickness is small, the angle segment difference of the color filter film layer is reduced effectively, the poor dark-state light leakage of the liquid crystal display device is reduced, and the liquid crystal display device display quality is improved. The invention further relates to a manufacturing method for the color filter sheet and a liquid crystal display device comprising the color filter sheet.

A perforate projection screen for movies, planetariums and the like having inconspicuous seams and uniform reflectivity throughout its visible surface. The screen is made from a plurality of perforate panels and is mounted, when in use, with a dark non-reflective chamber behind the screen. Any overlapped areas of the panels and any frame members or other objects, in close proximity to the back of the panels are covered with a black velour type material having vertically extending fibers to absorb the light rays entering the holes in those areas of the panels and thereby prevent light reflection from such holes which would cause undesirable light strips or areas to be visible in the overlapped portions of the screen or in the area of the screen where frame members or other objects are in close proximity to the back of the panel. The edges of adjacent panels overlap to form seams with the overlapped edges of the panels being crimped to form recesses to receive the overlapping edge strip of an adjacent panel, thereby hiding the overlapping panel edge to reduce shadow lines on the screen and make the panel edges inconspicuous to seated viewers of the screen.

The invention discloses a display panel and a display device. The display panel includes a display substrate, a first polarization layer positioned on a light going-out side of the display substrate, and at least one functional film layer positioned between the first polarization layer and the display substrate; at least one interface of each film layer is an uneven interface having a plurality of bar-shaped concave-convex edges which are arranged in parallel; the direction of the bar-shaped concave-convex edges of the outmost uneven interface is perpendicular to the polarization direction of the first polarization layer, the bar-shaped concave-convex edges have slopes extending in the direction of edges, and an included angle between the slopes and a flat surface is a Brewster angle that light enters the uneven interface. When environment light perpendicularly enters the display panel, the environment light can enter the display panel at the Brewster angle, the environment light passing through the first polarization layer is converted into linear polarized light, reflective light on the interface, of the perpendicularly incident environment light can be eliminated according to the Brewster law, and the surface reflectivity of the display panel is decreased.

It discloses a texturing method for a diamond wire cut polycrystalline silicon slice, including the following steps: firstly, immersing the diamond wire cut polycrystalline silicon slice into a mixed aqueous solution of an alkali solution and an alkali reaction control agent, removing a damaged layer on a surface of the silicon slice, and then immersing the silicon slice into a hydrofluoric acid solution containing inorganic ions and organic molecules for reaction; secondly, pretreating the polycrystalline silicon surface by a mixed solution of hydrofluoric acid and hydrogen peroxide, adding a pore-forming regulator at the same time, and finally texturing the surface of the silicon slice by a mixed acid solution of hydrofluoric acid and nitric acid.

The invention discloses a method for removing cutting marks generated at the back surface of diamond linear cutting polycrystalline silicon. The method comprises the following steps: 1, pre-cleaning a silicon chip; 2, placing the cleaned silicon chip in an HF/HNO3/H2O mixed solution for texturing processing; 3, placing the textured silicon chip in a mixed solution of H2O2/HF/AgNO3/Cu(NO3)2 and ultrapure water for corrosion so as to prepare a nanometer structure; and 4, performing expansion processing on the nanometer structure by use of a nanometer reconstruction solution, and performing anisotropic corrosion so as to remove the cutting marks at the surface of the polycrystalline silicon. According to the invention, on the basis that a black silicon anti-reflection structure is prepared based on MACE (metal-assisted chemical etching), the cutting marks at the surface of the diamond linear cutting polycrystalline silicon chip by use of anisotropy in a corrosion process, at the same time, the reflectivity of the surface of the silicon chip is also greatly reduced, and the method has important application potential in future preparation of low-cost high-conversion-efficiency diamond linear cutting polycrystalline silicon solar batteries.

The invention discloses a method for reducing the surface reflectivity of a texture mono-crystalline silicon chip, relating to the technical range and field of preparation of solar cells. A mono-crystalline silicon chip with a texture made by alkaline corrosion is put into a plasma etching device to implement non-mask plasma etching so as to further reduce the surface reflectivity of the texture mono-crystalline silicon chip. Gas used for etching is a mixed gas of CF4 and O2 with the flow portion ranging from 10:1 to 1:3, and the pressure in the treatment chamber ranges from 1Pa to 20Pa. The invention further reduces the surface reflectivity of the texture mono-crystalline silicon chip, and provides a feasible way to further improve the conversion efficiency of the solar cell. The method is characterized by simpleness, convenience, effectiveness, low cost, easy operation, no need of additional equipment and suitability for large-scale production.

The invention provides a transparent conductive metallic film and a preparation method thereof. The film is prepared from amorphous metallic copper by using a magnetron sputtering method, wherein the transparent conductive metallic film has a thickness of 7-30nm and an electrical resistivity of 10-5 to 10-4 Ohm cm; when being preferably 7-12nm in thickness, the transparent conductive metallic film has the light transmittance of 78-85%; the transparent conductive metallic film has a double-layered structure, and the outermost layer is an oxygen absorbing layer with the thickness stabilized in the range of 3-5nm. The thickness of the oxygen absorbing layer is not increased following the increasing of the whole thickness of the transparent conductive metallic film, therefore, the transparent conductive metallic film has decreased reflectivity and increased light transmittance in the visible light range.