Silicon solar cell surface light trapping structure and preparation method thereof

A technology of silicon solar cells and solar cells, applied in chemical instruments and methods, crystal growth, post-processing details, etc., can solve the problems of high cost, high equipment requirements, and difficulty in obtaining production processes for tank-type equipment, and achieve corrosion-free Sexuality, the effect of reducing the degree of demand

Inactive Publication Date: 2013-03-20
HANGZHOU DAOLE SOLOR ENERGY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0011] At the same time, since the acid corrosion process is a rapid reaction process with a large amount of heat release, the requirements for equ

Method used

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  • Silicon solar cell surface light trapping structure and preparation method thereof
  • Silicon solar cell surface light trapping structure and preparation method thereof
  • Silicon solar cell surface light trapping structure and preparation method thereof

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Embodiment 1

[0032] The specific implementation steps are as follows: 1) preparation of additives: 100 ml of deionized water is used as solvent, 1 ml of glycerin, 1 gram of citric acid, and 1 ml of crown ether type surfactant are dissolved in deionized water to prepare additives; 2) preparation of acid corrosion solution: HF, HNO 3 , H 2 O is mixed in a volume ratio of 1:5:4; 3) Prepare alkali rinse solution: dissolve solid NaOH in deionized water at a ratio of 5% by weight; 4) Add additives at 0.1% to 2) Prepared acid corrosion 5) immerse the monocrystalline or polycrystalline silicon sheet for solar cells in the texturing solution for reaction, and the reaction temperature is 12 ℃ , the texturing time is 200s; 6) Take out the silicon wafer treated in 5), rinse it with water for 2 minutes, then immerse it in the alkali solution prepared in step 3) to react for 45 seconds, take it out, rinse it, and dry it.

Embodiment 2

[0034] The specific implementation steps are as follows: 1) preparation of additives: 100 ml of deionized water is used as a solvent, 3 ml of glycerin, 0.6 gram of citric acid, and 0.5 ml of crown ether type surfactants are dissolved in deionized water to prepare additives; 2) preparation of acid corrosion solution : HF, HNO 3 , H 2 O is mixed at a volume ratio of 1:8:5; 3) Prepare alkali rinse solution: dissolve solid NaOH in deionized water at a ratio of 5% by weight; 4) Add additives at 0.5% to 2) Prepared acid corrosion Form the texturing solution in the liquid; 5) Immerse the monocrystalline or polycrystalline silicon wafer for solar cells in the texturing solution for reaction, and the reaction temperature is 15 ℃ , the texturing time is 180s; 6) Take out the silicon wafer treated in 5), rinse it with water for 2 minutes, then immerse it in the alkali solution prepared in step 3) to react for 45 seconds, take it out, rinse it, and blow dry.

Embodiment 3

[0036] The specific implementation steps are as follows: 1) preparation of additives: 100 ml of deionized water is used as a solvent, 10 ml of glycerin, 1 gram of citric acid, and 0.1 ml of crown ether type surfactants are dissolved in deionized water to prepare additives; 2) preparation of acid corrosion solution : HF, HNO 3 , H 2 O is mixed at a volume ratio of 1:4:3; 3) Prepare alkali rinse solution: dissolve solid NaOH in deionized water at a ratio of 5% by weight; 4) Add additives at 1% 2) Prepared acid corrosion Form the texturing solution in the liquid; 5) Immerse the monocrystalline or polycrystalline silicon wafer for solar cells in the texturing solution for reaction, and the reaction temperature is 18 ℃ , the texturing time is 240s; 6) Take out the silicon wafer treated in 5), rinse it with water for 2 minutes, then immerse it in the alkali solution prepared in step 3) to react for 45 seconds, take it out, rinse it, and dry it.

[0037] figure 2A scanning electr...

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Abstract

The present invention provides a silicon solar cell surface light trapping structure and a preparation method thereof, and relates to a novel polycrystalline silicon acid texturing process, wherein addition of a certain proportion of an organosilicon surfactant is adopted, the whole acid texturing process can be controlled with citric acid, a textured structure having a specific structure is formed, and a large amount of micro corrosion pits are generated inside the ordinary worm-like structure of the textured structure, wherein a length of the large corrosion pit is 2-10 mum, a width of the large corrosion pit is 1-5 mum, a depth of the large corrosion pit is 0.5-2 mum, a length of the small corrosion pit is 100-500 nm, a width of the small corrosion pit is 100-500 nm, and a depth of the small corrosion pit is 0.2-0.5 mum. With the present invention, texturing reflectivity can be reduced by 2-3%.

Description

technical field [0001] The invention relates to the production of crystalline silicon solar cells. By changing the traditional texture-making process, a microstructure is produced on the original textured surface, thereby effectively reducing the surface reflectance of the crystalline silicon solar cells and improving cell efficiency. Background technique [0002] The texturing process is the first step in the preparation process of the entire crystalline silicon solar cell (hereinafter referred to as solar cell). [0003] It has two main functions: [0004] 1) Erosion removes a certain thickness of silicon, the purpose of which is to remove the damaged layer during the cutting process of the silicon wafer [0005] 2) A texture with a certain shape is formed on the surface of the solar cell, the purpose of which is to trap light and improve the absorption of light by the solar cell, thereby improving the efficiency of the cell. [0006] Different types of solar cells have ...

Claims

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Application Information

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IPC IPC(8): C30B33/10C23F1/24
Inventor 汪琼
Owner HANGZHOU DAOLE SOLOR ENERGY TECH CO LTD
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