Method for removing surface line marks of diamond linear cutting polycrystalline silicon chip through wet method

A technology of polycrystalline silicon wafers and diamond wires, which is applied in the manufacture of electrical components, semiconductor/solid-state devices, circuits, etc., can solve the problems of long cutting time, difficult separation and purification of silicon powder, low cutting efficiency, etc., and achieve high repeatability Effect
CN106340446AActive Publication Date: 2017-01-18NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
Publication Date
2017-01-18

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Abstract

The invention discloses a method for removing cutting marks generated at the back surface of diamond linear cutting polycrystalline silicon. The method comprises the following steps: 1, pre-cleaning a silicon chip; 2, placing the cleaned silicon chip in an HF / HNO3 / H2O mixed solution for texturing processing; 3, placing the textured silicon chip in a mixed solution of H2O2 / HF / AgNO3 / Cu(NO3)2 and ultrapure water for corrosion so as to prepare a nanometer structure; and 4, performing expansion processing on the nanometer structure by use of a nanometer reconstruction solution, and performing anisotropic corrosion so as to remove the cutting marks at the surface of the polycrystalline silicon. According to the invention, on the basis that a black silicon anti-reflection structure is prepared based on MACE (metal-assisted chemical etching), the cutting marks at the surface of the diamond linear cutting polycrystalline silicon chip by use of anisotropy in a corrosion process, at the same time, the reflectivity of the surface of the silicon chip is also greatly reduced, and the method has important application potential in future preparation of low-cost high-conversion-efficiency diamond linear cutting polycrystalline silicon solar batteries.
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Description

technical field

[0001] The invention discloses a method for removing cutting marks produced on the surface of polysilicon after diamond wire cutting. On the basis of MACE (metal-assisted chemical etching method) to prepare black silicon anti-reflection structure, the anisotropy in the corrosion process is used to remove the diamond. The cutting marks on the surface of wire-cut polycrystalline silicon wafers also greatly reduce the reflectivity of the surface of silicon wafers, which has important application potential for the preparation of low-cost, high-conversion-efficiency diamond wire-cut polycrystalline silicon solar cells in the future. Background technique

[0002] At present, the photovoltaic power generation of crystalline silicon (single crystal and polycrystalline) solar cells is the mainstream field of photovoltaic power generation, but because its cost is too high to replace traditional energy sources, cost reduction has become the biggest problem in this indust...

Claims

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