Single crystal silicon texture-making additive and single crystal silicon texture-making technology

A technology of crystalline silicon texturing and additives, which is applied in sustainable manufacturing/processing, crystal growth, final product manufacturing, etc. It can solve the problems of high surface state requirements of original silicon wafers, high defect rate of textured appearance, and low conversion efficiency of cells and other problems, to achieve the effect of reducing the defect rate of the surface of the texture, the process of the texture is stable and reliable, and the realization of fully automatic liquid preparation

Inactive Publication Date: 2011-07-06
百力达太阳能股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Its disadvantages are: long time for texturing, large and uneven texturing pyramid, high requirements for the surface state of the original silicon wafer, relatively large chemical consumption, short solution life, poor texturing repeatability, and volatile amount of isopropanol, etc. It is very large, needs to be adjusted continuously, and the operation is difficult, which leads to problems such as high defect rate of texturing appearance and low conversion efficiency of cells

Method used

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  • Single crystal silicon texture-making additive and single crystal silicon texture-making technology

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] (1) Prepare monocrystalline silicon texturing additives, which are composed of wetting agent and defoaming agent with a weight ratio of 2:1, and the wetting agent is alkyl glycoside (APG-0810). The defoamer is sorbitan fatty acid ester (S-20).

[0029] (2) Single crystal silicon texturing process:

[0030] Heat 135L of deionized water to 70°C, add sodium hydroxide to obtain monocrystalline silicon texturing corrosion solution, wherein the concentration of sodium hydroxide is 1% by mass; add the above monocrystalline silicon texturing additive A mixed solution was obtained in the texture etching solution, wherein the concentration of monocrystalline silicon texturing additive was 0.3% by volume; the pre-cleaned original silicon wafer was put into the above mixed solution for 600s for texturing. The texturing process is carried out continuously in batches. After the texturing of the first batch of original silicon wafers is completed, sodium hydroxide and monocrystalline...

Embodiment 2

[0041](1) Prepare the monocrystalline silicon texturing additive, which is composed of a wetting agent and a defoaming agent with a weight ratio of 1:2, and the wetting agent is polysorbate 80. The defoamer is polyether polyol (F68).

[0042] (2) Single crystal silicon texturing process:

[0043] Heat 135L of deionized water to 80°C, add potassium hydroxide to obtain monocrystalline silicon texturing corrosion solution, wherein the concentration of potassium hydroxide is 2% by mass; add the above-mentioned monocrystalline silicon texturing additive and isopropanol Obtain mixed solution in monocrystalline silicon texturing corrosion solution, wherein, the volume percentage concentration of monocrystalline silicon texturing additive is 2%, the volume percentage concentration of isopropanol is 6%; Texturing is carried out in the mixed solution for 1200s. The texturing process is carried out continuously in batches. After the texturing of the first batch of original silicon wafe...

Embodiment 3

[0046] (1) Prepare the monocrystalline silicon texturing additive, which is composed of a wetting agent and a defoaming agent with a weight ratio of 1:1. The wetting agent is isomeric alcohol polyoxyethylene ether (model 1305). The defoamer is silicone surfactant (BYK-300).

[0047] (2) Single crystal silicon texturing process:

[0048] Heat 135L of deionized water to 75°C, add sodium hydroxide to obtain monocrystalline silicon texturing corrosion solution, wherein the mass percentage concentration of sodium hydroxide is 1.5%; add the above monocrystalline silicon texturing additive and isopropanol Obtain mixed solution in monocrystalline silicon texturing corrosion solution, wherein, the volume percent concentration of monocrystalline silicon texturing additive is 1%, and the volume percent concentration of isopropanol is 3%; Texturing is carried out in the mixed solution for 1000s. The texturing process is carried out continuously in batches. After the texturing of the fir...

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Abstract

The invention relates to a single crystal silicon texture-making additive and a single crystal silicon texture-making technology. The single crystal silicon texture-making additive consists of a wetting agent and a defoaming agent. The additive is characterized in that the wetting agent is a nonionic surfactant. The single crystal silicon texture-making technology comprises the following steps: heating deionized water to 70-80 DEG C, adding sodium hydroxide or potassium hydroxide to obtain a single crystal silicon texture-making corrosive liquid, wherein the mass percentage of sodium hydroxide or potassium hydroxide is 1%-2%; adding the single crystal silicon texture-making additive in the single crystal silicon texture-making corrosive liquid to obtain a mixed solution, wherein the volume percentage of the additive is 0.3%-2%; and placing a precleaned raw silicon chip in the mixed solution for 600-1200s for texture-making. By adopting the additive and technology in the invention, the texture-making quality can be greatly increased, the cost is greatly reduced, the technological operation can be easier and the automatic solution preparation can be realized.

Description

technical field [0001] The invention relates to a monocrystalline silicon texturing additive and a monocrystalline silicon texturing process, belonging to the technical field of solar cell production texturing process. Background technique [0002] At present, the process flow of conventional silicon solar cell production is surface pre-cleaning, texturizing to remove the damaged layer and form an anti-reflection textured structure, chemical cleaning and drying; the method of liquid source diffusion forms a uniformly doped surface at each point on the surface of the silicon wafer. PN junction; remove the peripheral PN junction and surface phospho-silicate glass formed during the diffusion process; deposit passivation and anti-reflection film on the surface; make the back electrode, back electric field and front electrode of the solar cell; sinter to form an ohmic contact to complete the entire cell production process. Among them, the step of removing the damaged layer and f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/10
CPCY02P70/50
Inventor 陆海斌石劲超
Owner 百力达太阳能股份有限公司
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