Method of forming micro-pore structures or trench structures on surface of silicon wafer substrate
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- 纮泰科技股份有限公司
- Publication Date
- 2012-05-09
- Estimated Expiration
- Not applicable · inactive patent
Smart Images
Figure 1 Figure 2 Figure 3
Abstract
Description
technical field
[0001] The invention relates to a method for forming a microporous structure or a groove structure on the surface of a silicon chip substrate, especially a chemical etching method for forming a microporous structure or a groove structure on the surface of a silicon chip substrate through noble metal alloy particles. Background technique
[0002] In recent years, the price of international energy (especially oil) has been rising day by day, and the demand for energy has also become increasingly tense. Renewable energy is a green energy that does not harm the environment, among which solar cells are a very promising clean energy that can generate electricity directly from sunlight. A solar cell is an energy-converting photoelectric component that converts light energy into electrical energy after being irradiated by sunlight. However, at present, the production cost of solar cells must be effectively reduced before they can be widely accepted as the main sourc...