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Polycrystalline silicon surface wool manufacturing method

A polysilicon and silicon wafer surface technology, applied in chemical instruments and methods, crystal growth, final product manufacturing, etc., can solve problems such as low uniformity, difficulty of screen printing electrodes, and inability to achieve anti-reflection effects, so as to reduce surface reflection rate effect

Inactive Publication Date: 2010-08-18
SUN POWER PHOTOVOLTAIC SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The texture structure obtained by this method of directly chemically etching polysilicon without a mask is randomly distributed, and the uniformity is low, which cannot achieve a good anti-reflection effect, and the uneven surface will also affect the silk screen. Printed electrodes pose certain difficulties

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0012] The sample is a polycrystalline silicon wafer with a thickness of 200 microns. First, the silicon wafer is pre-cleaned and the damage layer is removed by conventional methods, and then the plastic is dissolved in acetone, and a single layer of discontinuous plastic particles is deposited on the surface of the silicon wafer by an ultrasonic atomization process. Mask, dry the silicon wafer to volatilize the organic solvent, place the silicon wafer with the plastic particle mask in an acidic solution for 5 minutes to chemically corrode the texture, the ratio of hydrofluoric acid to nitric acid is HF:HNO 3 =12:1, and an appropriate amount of CH was added to the solution 3 COOH to reduce the reaction speed, then wash away the plastic particles with acetone, then wash with deionized water, and dry the silicon wafer, that is, a hemispherical "depressed" structure is formed, and the surface of the silicon wafer covered by plastic particles is flat and textured. .

Embodiment 2

[0014] The sample is a polycrystalline silicon wafer with a thickness of 200 microns. First, the silicon wafer is pre-cleaned and the damaged layer is removed by conventional methods, and then the plastic powder with a particle size of micron is sprayed on the surface of the silicon wafer by electrostatic spraying technology, and then hot-melted. Form a monolayer of discontinuous plastic particle mask, and then use an acid solution (HF:HNO 3 =5:1) corrosion for 0.5 minutes, and then corrode with 25% NaOH solution at 80°C for 4 minutes to make texture, then clean the plastic particles with acetone, then clean with deionized water, and dry the silicon wafer. That is to form a textured structure on the surface of the silicon wafer to complete the texture.

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Abstract

The invention relates to the manufacturing field of solar batteries, in particular to a polycrystalline silicon surface wool manufacturing method for solar batteries. The invention has the technical scheme that the polycrystalline silicon surface wool manufacturing method is characterized by successively adopting the following steps: 1) pre-cleaning a silicon wafer and removing an affected layer;2) adopting the ultrasonic atomization process or electrostatic spraying process to coat one layer of discontinuous plastic particle film on the surface of the silicon wafer to serve as a masking film; 3) putting the silicon wafer in acid solution and aqueous alkali for corrosion and wool manufacturing; and 4) cleaning the silicon wafer obtained in step 3) with acetone to remove plastic particle films, then cleaning with deionized water, and drying the silicon wafer. By adopting the scheme, the invention overcomes the defects and deficiencies in the prior art, and provides the polycrystallinesilicon surface wool manufacturing method. The method can be used for manufacturing high-performance polycrystalline silicon surface texture, has industrialization prospect and effectively lowers thesurface reflectivity of the silicon wafer.

Description

technical field [0001] The invention relates to the field of making solar cells, in particular to a method for making texture on the surface of polycrystalline silicon for solar cells. technical background [0002] In the field of solar photovoltaics, crystalline silicon solar cells have high conversion efficiency and simple sources of raw materials. They are the main force in the solar cell industry and occupy a dominant position in the market. In the production process of crystalline silicon solar cells, the light absorption on the surface of the cell can be effectively improved by preparing the textured structure of the surface of the silicon wafer, thereby improving the conversion efficiency of the cell. At present, the commonly used texturing method for silicon wafers is chemical etching. Specifically, the monocrystalline silicon wafers are directly placed in an alkaline solution for anisotropic etching to obtain a "pyramid" textured structure, and the polycrystalline s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/10C23F1/14C23F1/02
CPCY02P70/50
Inventor 万青郑策方旭昶
Owner SUN POWER PHOTOVOLTAIC SCI & TECH
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