Diamond wire cutting-based silicon wafer texturing pretreatment method and silicon wafer texturing method

Abstract

The invention provides a diamond wire cutting-based silicon wafer texturing pretreatment method. The method comprises the following steps: a, mixing a hydrofluoric acid solution, a hydrogen dioxide solution, metal salt and water to obtain pretreatment liquid; b, putting a silicon wafer cut by a diamond wire into the pretreatment liquid and performing pretreatment A, until cutting lines on the silicon wafer are basically removed; c, cleaning the silicon wafer subjected to pretreatment A by an acid solution, so as to remove metal particles on the silicon wafer; d, putting the silicon wafer cleaned by the acid solution into the pretreatment liquid and performing pretreatment B, and forming a pretreatment texturing surface with a uniform micro / nano structure on the silicon wafer. The invention also provides a diamond wire cutting-based silicon wafer texturing method.

Description

technical field [0001] The invention relates to the field of texturing of crystalline silicon solar cells, in particular to the technical field of texturing of silicon wafers based on diamond wire cutting. Background technique [0002] Diamond wire cutting technology, also known as fixed abrasive diamond wire sawing, is usually made by fixing diamond particles in the nickel-based alloy layer on the surface of stainless steel wire by electroplating or resin fixing. During the cutting process, the diamond wire saw runs at high speed and directly grinds and cuts the silicon material with a certain pressure. Compared with the traditional mortar multi-wire cutting technology, the diamond wire cutting technology has the advantages of high cutting efficiency, low cutting processing cost and clean environment, and is expected to become the future development direction of cutting hard and brittle materials such as crystalline silicon in the photovoltaic field. [0003] However, ther...

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Problems solved by technology

[0003] However, there are a series of problems in the surface texturing of polycrystalline silicon wafers, which limit the application and promotion of diamond cutting technology

For example, diamond cutting technology is easy to form cutting lines on silicon wafers during cutting, but the cutting lines are difficult to eliminate when using conventional acid etching methods for texturing, that is, the surface of silicon wafers after texturing still has cutting lines, so that The reflectivity of the silicon wafer after texturing cannot meet the requirements of industrial production, etc.

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