Preparation method of polycrystalline black silicon of micro-nano composite suede structure

A micro-nano composite, polycrystalline silicon wafer technology, applied in chemical instruments and methods, crystal growth, final product manufacturing, etc., can solve the problems of fast reaction speed, single, difficult to control reaction process, etc., to reduce the surface reflectivity, reduce the surface Compounding, removal-friendly effect

Inactive Publication Date: 2015-03-04
48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] At present, in the disclosed black silicon material production technology, patents on the preparation of black silicon by metal-catalyzed chemical etching, such as CN 102051618 A, CN 102768951 A and CN 103578966 A, are all directly processed on silicon wafers without textured structures. However, the obtained texture is only a single nano-texture, and no polycrystalline black

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  • Preparation method of polycrystalline black silicon of micro-nano composite suede structure
  • Preparation method of polycrystalline black silicon of micro-nano composite suede structure
  • Preparation method of polycrystalline black silicon of micro-nano composite suede structure

Examples

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Example Embodiment

[0030] Example 1:

[0031] First, put the p-type polycrystalline silicon wafer into an etching solution composed of hydrofluoric acid and nitric acid for etching. The concentration of hydrofluoric acid is 2.5 mol / L and the concentration of nitric acid is 7.5 mol / L. After 100s, it is taken out and Clean, prepare and obtain polycrystalline silicon wafers with micron texture structure; then, place them in a mixed solution of hydrofluoric acid and silver nitrate, where the concentration of hydrofluoric acid is 4 mol / L and the concentration of silver nitrate is 0.005 mol / L, take it out after 60s of standing time to obtain a polycrystalline silicon wafer with silver nanoparticles adsorbed on the micro-textured surface; then place it in an etching solution of hydrofluoric acid and hydrogen peroxide, where the concentration of hydrofluoric acid The concentration of hydrogen peroxide is 4 mol / L, the concentration of hydrogen peroxide is 0.4 mol / L, and the etching time is 1 min. Take it o...

Example Embodiment

[0032] Example 2:

[0033] First, put the p-type polycrystalline silicon wafer into an etching solution composed of hydrofluoric acid and nitric acid for etching. The concentration of hydrofluoric acid is 2.5 mol / L and the concentration of nitric acid is 7.5%. After 100s, it is taken out and cleaned. , To prepare polycrystalline silicon wafers with a micron texture structure; then, place them in a mixed solution of hydrofluoric acid and copper nitrate, where the concentration of hydrofluoric acid is 4 mol / L and the concentration of copper nitrate is 0.005 mol / L , Take it out after 60s of standing time to obtain a polycrystalline silicon wafer with copper nanoparticles adsorbed on the micron suede; then place it in an etching solution of hydrofluoric acid and hydrogen peroxide, where the concentration of hydrofluoric acid is 4 mol / L, the concentration of hydrogen peroxide is 0.4 mol / L, the etching time is 1 min, and then take it out to obtain a polycrystalline silicon wafer with a...

Example Embodiment

[0034] Example 3:

[0035] First, put the p-type polycrystalline silicon wafer into an etching solution composed of hydrofluoric acid and nitric acid for etching. The concentration of hydrofluoric acid is 2.5 mol / L and the concentration of nitric acid is 7.5 mol / L. After 100s, it is taken out and Clean, prepare and obtain polycrystalline silicon wafers with micron texture structure; then, place them in a mixed solution of hydrofluoric acid and silver nitrate, where the concentration of hydrofluoric acid is 4 mol / L and the concentration of silver nitrate is 0.005 mol / L, take it out after 60s of standing time to obtain a polycrystalline silicon wafer with silver nanoparticles adsorbed on the micro-textured surface; then place it in an etching solution of hydrofluoric acid and hydrogen peroxide, where the concentration of hydrofluoric acid The concentration of hydrogen peroxide is 4 mol / L, the concentration of hydrogen peroxide is 0.4 mol / L, and the etching time is 1 min. Take it o...

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Abstract

The invention discloses a preparation method of polycrystalline black silicon of a micro-nano composite suede structure. The method comprises the following steps: imbedding polycrystalline silicon chips into etchant solution to obtain polycrystalline silicon chips with micro-meter suede structures; transferring the polycrystalline silicon chips with the micro-meter suede structures into a metal ion compound solution to deposit metal nanoparticles on the micro-meter suede; transferring into an etching solution to etch so as to obtain the polycrystalline silicon chips with the micro-nano composite suede structures; washing to remove metal particles residual on the surface; feeding into an alkaline solution to modify and etch the micro-nano composite suede structure; then drying to obtain the product. According to the method, the wet chemical etching method is carried out to prepare the micro-nano composite suede structure on the surface of the polycrystalline black silicone; such structure is extremely low in reflectivity; meanwhile, the preparation method is highly compatible with the general polycrystalline silicon suede preparation process; therefore, the preparation method can be quickly applied to the current general polycrystalline black silicon solar cell industry; the light absorbing efficiency can be obviously raised, and as a result, the efficiency of a solar cell is increased.

Description

technical field [0001] The invention relates to the technical field of manufacturing solar cell devices, in particular to a method for preparing polycrystalline black silicon with a micro-nano composite textured structure on the front surface of polycrystalline silicon. Background technique [0002] Polycrystalline silicon solar cells have occupied a dominant position in the current commercial solar cell products due to their comprehensive advantages in cost, conversion efficiency and electrical performance. However, there is a gap of about 1% between polycrystalline silicon cells and monocrystalline silicon cells in terms of conversion efficiency. Among them, the reflectivity of textured polycrystalline silicon is much higher than that of textured monocrystalline silicon, which is an important factor leading to this gap. Due to its extremely low reflectivity in the visible light range, black silicon has attracted widespread attention in the photovoltaic industry. Especiall...

Claims

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Application Information

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IPC IPC(8): H01L31/18C30B33/10
CPCC30B33/10H01L31/02363Y02E10/50Y02P70/50
Inventor 周洪彪刘文峰陆运章
Owner 48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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