A device for removing the diamond wire cutting damage layer on the surface of polycrystalline silicon wafer

A technology of diamond wire cutting and polysilicon wafers, which can be applied to used abrasive processing devices, metal processing equipment, and cleaning methods using gas flow, etc., and can solve problems such as inability to effectively remove damaged layers, high cost, and complicated process flow

Active Publication Date: 2018-04-10
LESHAN TOPRAYCELL
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Problems solved by technology

At present, in the production process of solar cells, the thickness of the damaged layer formed on the surface of the silicon wafer after diamond wire cutting is 4-7um, and acid-base corrosion cannot effectively remove the damaged layer to form a better suede surface. If metal-catalyzed chemical corrosion (MCCE) is used , the process is complicated and the cost is high

Method used

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  • A device for removing the diamond wire cutting damage layer on the surface of polycrystalline silicon wafer

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Embodiment Construction

[0016] Such as figure 1 As shown, the removal device of the diamond wire cutting damage layer on the surface of the polycrystalline silicon wafer includes a bracket 1, a headless belt 2, a driving wheel 3, and a driven wheel 4, and the driving wheel 3 and the driven wheel 4 are fixed on the bracket 1 through bearings, Described headless belt 2 walks around driving wheel 3, driven wheel 4 and is tightened by driving wheel 3 and driven wheel 4, is connected with the drive motor 5 that is used to drive driving wheel 3 to rotate on described bracket 1, and described endless belt 2. It is arranged horizontally and a support platform 6 is provided between the headless belt 2 on the upper layer and the headless belt 2 on the lower floor. The support platform 6 is fixed on the support 1 through a support rod. The surface is a smooth plane, and the headless belt 2 located on the upper layer is in contact with the upper surface of the support platform 6, and the two end faces of the sup...

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Abstract

The invention discloses a removing device for a diamond wire cutting damage layer on the surface of a multicrystalline wafer, which is lower in cost and can form a better suede. The removing device comprises a support, a headless belt, a driving wheel and a driven wheel, wherein the headless belt bypasses the driving wheel and the driven wheel and is tightened by the driving wheel and the driven wheel; the headless belt is horizontally arranged, and a supporting platform is arranged between the headless belt positioned on an upper layer and the headless belt positioned on a lower layer; the upper surface of the supporting platform is a smooth plane; the headless belt positioned on the upper layer is in contact with the upper surface of the supporting platform; a sandblasting apparatus is arranged above the supporting platform. By using the sand blasting device, the diamond wire cutting damage layer of the multicrystalline wafer can be effectively removed, and uniform suede, low reflectivity and better suede quality of a finally-obtained silicon wafer are guaranteed; in addition, by using the device, the streamline operation can be realized, the efficiency is higher, and the production cost of the multicrystalline wafer can be greatly reduced. The removing device is suitable for popularization and application in the technical field of processing of silicon wafers.

Description

technical field [0001] The invention relates to the technical field of silicon wafer processing, in particular to a device for removing a diamond wire cutting damage layer on the surface of a polycrystalline silicon wafer. Background technique [0002] At present, the cutting of polysilicon wafers in the photovoltaic field mainly adopts the mortar multi-wire cutting technology, but this technology has problems such as low cutting efficiency, high processing cost, and large pollution of waste mortar discharge. In contrast, the solid abrasive diamond wire saw cutting (referred to as diamond wire cutting) technology has the advantages of high cutting efficiency, low processing cost and low environmental pollution, and has received more and more attention. The future direction of slicing technology. [0003] Since the cutting principle of diamond wire dicing is different from that of mortar multi-wire dicing, there are great differences in the surface morphology of silicon wafe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24C3/12B24C3/08B24C9/00B08B5/02
CPCB08B5/023B24C3/083B24C3/12B24C9/00
Inventor 陈五奎刘强徐文州陈磊冯加保耿荣军
Owner LESHAN TOPRAYCELL
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