Monocrystalline silicon wafer pre-cleaning method

A single-crystal silicon wafer and pre-cleaning technology, applied in the field of cleaning technology, can solve the problems such as the inability to remove the dirty fingerprints of the single-crystal silicon wafer, the uneven quality of the single-crystal silicon wafer, and the impact on the product A yield rate, etc. The effect of shortening the texturing time, uniform suede and avoiding whitening

Inactive Publication Date: 2012-10-10
JILIN QINGDA NEW ENERGY ELECTRIC POWER
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Nowadays, due to the different manufacturing processes of various manufacturers of monocrystalline silicon wafers, the quality of monocrystalline silicon wafers is uneven, and there are problems of varying degrees. Traditional production processes cannot remove dirt, fingerprints, and organic residues on monocrystalline silicon wafers. etc., and the silicon wafers caused by the above reasons will directly affect the A-quality rate of the product.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] ①. For the first liquid preparation, add 135 liters of deionized water into the process tank with a volume of 150 liters, heat the water temperature in the process tank and keep it at 65 degrees; then start the preparation of various chemicals, first add NaOH (Electronic grade) 250g, add H 2 o 2 About 6 liters, stir evenly with a long stick made of PP material, and get the dosing solution for use.

[0018] ②, cleaning, put the 125*125 monocrystalline silicon wafers into the carrying box, put multiple carrying boxes into the big flower blue one by one as a batch, and require the number of single crystal silicon wafers in each batch to be 300 Finally, put the big flower blue with the monocrystalline silicon wafer into the process tank equipped with the solution in ①, and control the soaking time to 200 seconds.

[0019] ③, rehydration, after each batch of cleaning, rehydration is required when cleaning the next batch, add H 2 o 2 0.8 liters, in the case of uninter...

Embodiment 2

[0021] ①. For the first liquid preparation, add 155 liters of deionized water into the process tank with a volume of 165 liters. The water temperature in the process tank is heated and kept at 65 degrees; then start the preparation of various chemicals, first add NaOH (Electronic grade) 275 grams, then add H 2 o 2 About 6 liters, stir evenly with a long stick made of PP material, and get the dosing solution for use.

[0022] ②, Cleaning, put the 125*125 monocrystalline silicon wafers into the carrier box, put multiple carrier boxes into the big flower blue in turn as a batch, and require the number of monocrystalline silicon wafers in each batch to be 400 Finally, put the big flower blue with the monocrystalline silicon wafer into the process tank with the solution in ①, and control the soaking time to 250 seconds.

[0023] ③, rehydration, after each batch of cleaning, rehydration is required when cleaning the next batch, add H 2 o 2 0.9 liters, in the case of uninterr...

Embodiment 3

[0025] ①. For the first dosing, add 160 liters of deionized water into the process tank with a volume of 180 liters. The water temperature in the process tank is heated and kept at about 65 degrees; then start the preparation of various chemicals, first add NaOH (electronic grade) 300 g, then add H 2 o 2 About 6 liters, stir evenly with a long stick made of PP material, and get the dosing solution for use.

[0026] ②, Cleaning, put the 125*125 monocrystalline silicon wafers into the carrier box, put multiple carrier boxes into the big flower blue in turn as a batch, and require the number of monocrystalline silicon wafers in each batch to be 400 slices, and finally put the indigo with monocrystalline silicon wafers into the process tank equipped with the solution in ①, and the soaking time is controlled at 300 seconds.

[0027] ③, rehydration, after each batch of cleaning, rehydration is required when cleaning the next batch, add H 2 o 2 1 liter, in the case of uninter...

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PUM

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Abstract

The invention relates to a cleaning technology in solar battery production process, concretely to a monocrystalline silicon wafer pre-cleaning method which can completely and effectively clean off smudginess from monocrystalline silicon incoming materials. The pre-cleaning method comprises three technical steps of first-time fluid preparation, cleaning and fluid supplementation. The method overcomes the disadvantages of the prior art and is capable of completely removing smugness, fingerprints, organic matter residues and the like from monocrystalline silicon wafers manufactured with different technologies and by different manufacturers without affecting any indexes of the monocrystalline silicon wafers. By using the method, good pile faces are obtained through pile-face manufacturing, pile-face making time is shortened, drug amount needed for pile-face making is reduced and surface clearness of the monocrystalline silicon wafer cleaned through the abovementioned steps meets class A wafer standard.

Description

Technical field [0001] The present invention involves a cleaning process in the production process of solar cells. Specifically, a pre -cleaning method that can clean and effectively clean off the single crystal silicon wafer to make dirty silicon wafers. Background technique [0002] my country attaches great importance to the research and development of solar batteries. As early as the July Five -Year Plan period, the research of amorphous silicon semiconductors had been included in major national topics; during the 8th and 9th, the focus of research and development was on large -scale solar cells. etc.In October 2003, the National Development and Reform Commission and the Ministry of Science and Technology formulated the solar energy resource development plan in the next five years.The total installed capacity of the system reaches 300 MW.my country has become the largest manufacturing country in global photovoltaic products, and my country's upcoming "New Energy Revitalizatio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/10
Inventor 刘万学程明辉刘志坚侯丽艳强艳建韩丽侯文会
Owner JILIN QINGDA NEW ENERGY ELECTRIC POWER
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