The invention discloses a test method of residual stress of a silicon single crystal piece. Main test steps comprise preparing a three-dimensional strain rosette, a strain gauge, a detected silicon single crystal piece and the like, pasting the three-dimensional strain rosette, testing an initial value of each resistor of the three-dimensional strain rosette and recording the value, cutting a silicon chip to release a stress, testing each data of the three-dimensional strain rosette again and recording the data, processing the data, and analyzing and discussing a result. According to the invention, the three-dimensional strain rosette is taken as a strain sensor, a cutting method is employed to release a residual stress of the silicon chip, through employing an YE2539 high speed static strain indicator to measure reverse direction strain of the strain rosette tightly pasted on the silicon chip, size and direction of a residual stress of each point on the silicon chip can be calculated, and a unique test operation process of the silicon chip is formed. Test precision is high, speed is fast, and cost is low. A test result analysis shows that: total residual stress of a monocrystalline silicon piece is small, a residual stress at a circumference edge is large relative to an internal measuring point, a maximum residual stress of an unprocessed monocrystalline silicon piece is large relative to a processed monocrystalline silicon piece.