Test method of residual stress of silicon single crystal piece

Abstract

The invention discloses a test method of residual stress of a silicon single crystal piece. Main test steps comprise preparing a three-dimensional strain rosette, a strain gauge, a detected silicon single crystal piece and the like, pasting the three-dimensional strain rosette, testing an initial value of each resistor of the three-dimensional strain rosette and recording the value, cutting a silicon chip to release a stress, testing each data of the three-dimensional strain rosette again and recording the data, processing the data, and analyzing and discussing a result. According to the invention, the three-dimensional strain rosette is taken as a strain sensor, a cutting method is employed to release a residual stress of the silicon chip, through employing an YE2539 high speed static strain indicator to measure reverse direction strain of the strain rosette tightly pasted on the silicon chip, size and direction of a residual stress of each point on the silicon chip can be calculated, and a unique test operation process of the silicon chip is formed. Test precision is high, speed is fast, and cost is low. A test result analysis shows that: total residual stress of a monocrystalline silicon piece is small, a residual stress at a circumference edge is large relative to an internal measuring point, a maximum residual stress of an unprocessed monocrystalline silicon piece is large relative to a processed monocrystalline silicon piece.

Description

technical field [0001] The invention relates to a method for testing the residual stress of a semiconductor silicon single wafer, in particular to a method for testing the residual stress of a silicon single wafer by using a resistance strain gauge. Background technique [0002] In the process of semiconductor devices, silicon single wafer is the production unit of a single device or integrated circuit chip accumulation. With the requirements of market competition, it is necessary to continuously reduce costs and continuously improve production efficiency. Therefore, the area of ​​semiconductor production units - silicon wafers It is getting bigger and bigger, and the diameter has developed from the previous domestic 1.5inch (38.04㎜), 2inch (50.72㎜), 3inch (76.08㎜) silicon wafers to 4inch (100㎜), 5inch (125㎜), 6inch (150㎜) At present, the world's advanced enterprises have reached 8inch (200㎜), 10inch (250㎜), 12inch (300㎜). [0003] With the use of large-diameter silicon waf...

AI Technical Summary

Problems solved by technology

However, since the manufacturing process of silicon semiconductor devices requires mechanical grinding, thinning, polishing and other processes, as well as multi-process high-temperature processes, and the thickness of silicon wafers is processed from less than 1 mm to 100 microns to 200 microns, the semiconductor device manufacturing process The fragmentation situation in the wafer becomes more and more serious as the diameter of the silicon wafer increases

The testing equipment of the physical method is complicated, expensive, and the precision is not high

Especially when applied to on-site measurement, there are certain limitations and difficulties

Images