Texturing method of quasi-single crystal silicon wafer
A quasi-single crystal, silicon wafer technology, applied in the field of texturing, can solve the problems that affect the appearance of the packaged components, and the cells cannot exert the advantages of quasi-single crystal silicon wafers, and achieve good surface light trapping effect and silicon wafer consumption. Less emission and less pollution
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Embodiment 2
[0028] The silicon wafer used in the experiment is a p-type quasi-single crystal silicon wafer of 156×156 mm2, and the (100) grain area accounts for about 65% of the entire silicon wafer.
[0029] Remove damaged layer: choose HF, HNO 3 The mixed solution, the volume percentage of the mixed solution is 60%, HF and HNO 3 The volume ratio is 1:3.5, the temperature when removing the mechanically damaged layer is 7°C, and the reaction time is controlled to ensure that the thickness of the damaged layer on one side is 6-7μm.
[0030] Put the silicon wafer that has passed the above-mentioned damage removal layer into the plasma etching chamber, and the silicon wafer placement chamber is filled with SF 6 and O 2 , the ratio is 0.5, the RF source frequency is 13.56MHz, the RF power is 150W, the cavity pressure is 100mTorr, and the etching amount is controlled to reach 3μm by controlling the reaction time.
[0031] The reflectance of the (100) crystal grains of the silicon wafer obta...
Embodiment 3
[0033] The silicon wafer used in the experiment is a p-type quasi-single crystal silicon wafer of 156×156mm2, and the area of (100) grains accounts for less than 20% of the entire silicon wafer.
[0034] Remove damaged layer: choose HF, HNO 3 The mixed solution, the volume percentage of the mixed solution is 60%, HF and HNO 3 The volume ratio is 1:3.5, the temperature when removing the mechanically damaged layer is 7°C, and the reaction time is controlled to ensure that the thickness of the damaged layer on one side is 6-7μm.
[0035] Put the silicon wafer that has passed through the above-mentioned damage removal layer into the reactive ion etching chamber, and the silicon wafer is placed in the chamber to pass through SF 6 and O 2, the ratio is 0.5, the RF source frequency is 13.56MHz, the RF power is 100W, the cavity pressure is 185mTorr, and the etching amount is controlled to reach 3μm by controlling the reaction time.
[0036] In the silicon wafer obtained through t...
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