Texturing method of quasi-single crystal silicon wafer

A quasi-single crystal, silicon wafer technology, applied in the field of texturing, can solve the problems that affect the appearance of the packaged components, and the cells cannot exert the advantages of quasi-single crystal silicon wafers, and achieve good surface light trapping effect and silicon wafer consumption. Less emission and less pollution

Inactive Publication Date: 2012-05-23
SUZHOU TALESUN SOLAR TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the production process of this type of silicon wafer battery, if the texturing process is not improved, no matter whether the alkali texturing used for traditional single crystal or the acid texturing used for polycryst

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 2

[0028] The silicon wafer used in the experiment is a p-type quasi-single crystal silicon wafer of 156×156 mm2, and the (100) grain area accounts for about 65% of the entire silicon wafer.

[0029] Remove damaged layer: choose HF, HNO 3 The mixed solution, the volume percentage of the mixed solution is 60%, HF and HNO 3 The volume ratio is 1:3.5, the temperature when removing the mechanically damaged layer is 7°C, and the reaction time is controlled to ensure that the thickness of the damaged layer on one side is 6-7μm.

[0030] Put the silicon wafer that has passed the above-mentioned damage removal layer into the plasma etching chamber, and the silicon wafer placement chamber is filled with SF 6 and O 2 , the ratio is 0.5, the RF source frequency is 13.56MHz, the RF power is 150W, the cavity pressure is 100mTorr, and the etching amount is controlled to reach 3μm by controlling the reaction time.

[0031] The reflectance of the (100) crystal grains of the silicon wafer obta...

Embodiment 3

[0033] The silicon wafer used in the experiment is a p-type quasi-single crystal silicon wafer of 156×156mm2, and the area of ​​(100) grains accounts for less than 20% of the entire silicon wafer.

[0034] Remove damaged layer: choose HF, HNO 3 The mixed solution, the volume percentage of the mixed solution is 60%, HF and HNO 3 The volume ratio is 1:3.5, the temperature when removing the mechanically damaged layer is 7°C, and the reaction time is controlled to ensure that the thickness of the damaged layer on one side is 6-7μm.

[0035] Put the silicon wafer that has passed through the above-mentioned damage removal layer into the reactive ion etching chamber, and the silicon wafer is placed in the chamber to pass through SF 6 and O 2, the ratio is 0.5, the RF source frequency is 13.56MHz, the RF power is 100W, the cavity pressure is 185mTorr, and the etching amount is controlled to reach 3μm by controlling the reaction time.

[0036] In the silicon wafer obtained through t...

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PUM

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Abstract

The invention relates to a texturing method of a quasi-single crystal silicon wafer. The texturing method is characterized in that the method comprises the following steps that: a wet etching method is employed to remove a mechanical damage layer on a quasi-single crystal silicon wafer that based on crystal grain crystal grains; and according to a proportion for which the crystal grains account, plasma etching and reactive ion etching are employed to carry out single crystal texturing. Therefore, there is no need for deionized water to carry out the plasma etching and the reactive ion etching; and less chemical reagent dosages are required. Meanwhile, pollution of reaction product discharging is low as well as safety and environmental-friendly performances are realized. Moreover, reflectivity of the textured quasi-single crystal silicon wafer is less than 15%; the surface light tripping effect is good; and the cell slice gives full play to advantages of the quasi-single crystal silicon wafer; the textured surface texturing is independent of conditions of the crystal orientation and the substrate; and advantages of high reliability, easiness for control and less silicon chip consumption are realized; and the utilization of the method is beneficial for application of thin silicon chips.

Description

technical field [0001] The invention relates to a texturing method, in particular to a texturing method for a quasi-single crystal silicon wafer. Background technique [0002] Texturing is the process of preparing silicon surfaces with anti-reflective properties. In the preparation process of solar cells, through the texturing process, the surface light trapping effect is used to promote the absorption of sunlight and improve the photoelectric conversion efficiency of solar cells. [0003] Industrialized silicon wafers at home and abroad mainly include monocrystalline silicon wafers and polycrystalline silicon wafers. The corresponding manufacturing methods are Czochralski single crystal slicing process and ingot polycrystalline slicing process. Czochralski monocrystalline solar cells have high conversion efficiency (>18%), and the manufacturing cost of corresponding silicon wafers is also relatively high; on the contrary, cast polycrystalline solar cells have become the...

Claims

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Application Information

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IPC IPC(8): H01L31/18C30B33/10
CPCY02P70/50
Inventor 魏青竹钱峰陆俊宇任军林汪艳玲
Owner SUZHOU TALESUN SOLAR TECH CO LTD
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