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Cleaning process of monocrystalline silicon wafer

A monocrystalline silicon wafer and process technology, applied in the direction of using liquid cleaning methods, cleaning methods and utensils, chemical instruments and methods, etc., can solve the problems of loss, stained chips, poor stability, etc., and achieve the improvement of pass rate and improvement Good working efficiency and cleaning effect

Inactive Publication Date: 2012-01-25
无锡尚品太阳能电力科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existing silicon wafer cleaning process generally includes the steps of degumming, cleaning and drying. However, due to improper control of cleaning time and water temperature, the stability in the production process is relatively poor. The cleaning solutions of the first batch and the third batch of silicon wafers The residue difference is 30%, and the silicon wafers washed out after the third batch often have stains, and the pass rate is sometimes only about 80%, causing great losses

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] A cleaning process for monocrystalline silicon wafers, comprising the steps of:

[0015] (1) Pre-rinse: Put the cut monocrystalline silicon wafers into the flower basket, push them into the four slots of the four-slot degumming machine in turn, and perform pre-rinse in No. 1 and No. 2 slots. The temperature of pure water is 45°C , the time is 6 minutes, ultrasonic cleaning is carried out in No. 3 tank, ultrasonic cleaning is 6 minutes, the water temperature is 55 ° C, the ultrasonic frequency is 45 Hz, lactic acid with a volume concentration of 3% is added to No. 4 tank, ultrasonic cleaning is performed for 6 minutes, the water temperature is 55 ° C , the ultrasonic frequency is 45 Hz;

[0016] (2) Degumming: Soak the pre-washed silicon wafers in water at a temperature of 50°C, pour them naturally, manually tear off the film, and put the silicon wafers into the cleaning film box after degumming;

[0017] (3) Ultrasonic cleaning: immerse the packed cassette into the fir...

Embodiment 2

[0022] A cleaning process for monocrystalline silicon wafers, comprising the steps of:

[0023] (1) Pre-rinse: Put the cut monocrystalline silicon wafers into the flower basket, push them into the four slots of the four-slot degumming machine in turn, and perform pre-rinse in No. 1 and No. 2 slots. The temperature of pure water is 50°C , the time is 7 minutes, ultrasonic cleaning is carried out in No. 3 tank, ultrasonic cleaning is 7 minutes, the water temperature is 60 ° C, the ultrasonic frequency is 50 Hz, oxalic acid with a volume concentration of 5% is added to No. 4 tank, ultrasonic cleaning is 7 minutes, the water temperature is 60 ° C , the ultrasonic frequency is 50 Hz;

[0024] (2) Degumming: Soak the pre-washed silicon wafers in water at a temperature of 60°C, pour them naturally, tear off the film manually, and put the silicon wafers into the cleaning film box after degumming;

[0025] (3) Ultrasonic cleaning: immerse the packed cassette into the first and second ...

Embodiment 3

[0029] A cleaning process for monocrystalline silicon wafers, comprising the steps of:

[0030] (1) Pre-rinse: Put the cut monocrystalline silicon wafers into the flower basket, push them into the four slots of the four-slot degumming machine in turn, and perform pre-rinse in No. 1 and No. 2 slots. The temperature of pure water is 48°C , the time is 6.5 minutes, ultrasonic cleaning is carried out in No. ℃, ultrasonic frequency is 48 Hz;

[0031] (2) Degumming: Soak the pre-washed silicon wafers in water at a temperature of 57°C, pour them naturally, tear off the film manually, and put the silicon wafers into the cleaning film box after degumming;

[0032] (3) Ultrasonic cleaning: immerse the packed cassette in the first and second tanks of a six-tank ultrasonic cleaning machine for rough cleaning for 6.5 minutes each, at a water temperature of 48°C; immerse the rough-washed silicon wafers in a six-tank ultrasonic cleaning machine. The cleaning liquid in the third and fourth ...

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Abstract

The invention relates to a cleaning process of a monocrystalline silicon wafer. The cleaning process comprises the following steps: (1) pre-flushing: orderly cleaning the monocrystalline silicon wafer in four grooves of a four-groove degumming machine; (2) degumming: manually degumming the pre-flushed silicon wafer; (3) ultrasonic wave cleaning: immersing the degummed silicon wafer in a six-groove type ultrasonic wave cleaning machine; (4) whirling: centrifugally whirling the cleaned silicon wafer on a centrifugal whirling device; (5) checking; detecting the appearance of the whirled silicon wafer, entering the other processes when the detection is qualified. The cleaning process has good cleaning effect, the yield is greatly improved, and the working efficiency of the machine is greatly improved.

Description

technical field [0001] The invention relates to a single crystal silicon chip production process in the field of photovoltaic technology, in particular to a single crystal silicon chip cleaning process. Background technique [0002] With the promotion of green energy around the world and the rapid development of the semiconductor industry in recent years, the requirements for silicon wafers are becoming more and more stringent. As a key technology in the upstream production of silicon wafers, the new silicon wafer cleaning process that has emerged in recent years has the advantages of high cleaning surface quality and high cleaning efficiency. The existing silicon wafer cleaning process generally includes the steps of degumming, cleaning and drying. However, due to improper control of cleaning time and water temperature, the stability in the production process is relatively poor. The cleaning solutions of the first batch and the third batch of silicon wafers The residual d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B08B3/12
Inventor 孙亮湖
Owner 无锡尚品太阳能电力科技有限公司
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