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Method for preparing silicon nanowire array membrane electrode

A silicon nanowire array, silicon nanowire technology, applied in electrode manufacturing, battery electrodes, electrode carriers/current collectors, etc., can solve the problem that the contribution of silicon substrate cannot be excluded, and achieve improved electron transport, good performance, and operation. easy effect

Inactive Publication Date: 2010-06-02
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Peng Kuiqing and others used silicon nanowires prepared by metal-catalyzed corrosion as the anode of lithium-ion batteries. However, since the silicon substrate with a thickness of several hundred microns remained under the silicon nanowires, they could not rule out the contribution of the silicon substrate to the anode capacity.

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  • Method for preparing silicon nanowire array membrane electrode
  • Method for preparing silicon nanowire array membrane electrode
  • Method for preparing silicon nanowire array membrane electrode

Examples

Experimental program
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Effect test

Embodiment 1

[0020] The steps of this embodiment are as follows:

[0021] (1) Put the monocrystalline silicon wafer into the aqueous solution of hydrofluoric acid and silver nitrate for 60 seconds, the volume ratio of each component in the solution is: HNO 3 :HF:H 2 O=1:4:15, plate a layer of silver nanoparticle film with the method of electroless deposition;

[0022] (2) put the monocrystalline silicon chip that the surface is coated with silver nanoparticle film into the aqueous solution of hydrofluoric acid and hydrogen peroxide and corrode, the volume ratio of each component in the solution is: H 2 o 2 :HF:H 2 O=1:4:15, the corrosion temperature is 50°C, and the corrosion time is 90 minutes;

[0023] (3) After the etching is finished, both surfaces of the silicon wafer are silicon nanowire arrays with a length of 50 μm, and the middle is a silicon wafer with a thickness of 100 μm that is not corroded. The silicon nanowires on both sides are ground with fine sandpaper, and repeated ...

Embodiment 2

[0028] The steps of this embodiment are as follows:

[0029] (1) Put the monocrystalline silicon wafer into the aqueous solution of hydrofluoric acid and silver nitrate for 80s, the volume ratio of each component in the solution is: HNO 3 :HF:H 2 O=1:6:20, plate a layer of silver nanoparticle film with the method of electroless deposition;

[0030] (2) put the monocrystalline silicon chip that the surface is coated with silver nanoparticle film into the aqueous solution of hydrofluoric acid and hydrogen peroxide and corrode, the volume ratio of each component in the solution is: H 2 o 2 :HF:H 2 O=1:6:20, the corrosion temperature is 55°C, and the corrosion time is 85min;

[0031] (3) After the etching is finished, both surfaces of the silicon wafer are silicon nanowire arrays with a length of 55 μm, and the middle is a silicon wafer with a thickness of 110 μm that is not corroded. The silicon nanowires on both sides are ground with fine sandpaper, and repeated after cleani...

Embodiment 3

[0036] The steps of this embodiment are as follows:

[0037] (1) Put the monocrystalline silicon wafer into the aqueous solution of hydrofluoric acid and silver nitrate for 70s, the volume ratio of each component in the solution is: HNO 3 :HF:H 2 O=1:8:26, plate a layer of silver nanoparticle film with the method of electroless deposition;

[0038] (2) put the monocrystalline silicon chip that the surface is coated with silver nanoparticle film into the aqueous solution of hydrofluoric acid and hydrogen peroxide and corrode, the volume ratio of each component in the solution is: H 2 o 2 :HF:H 2 O=1:8:26, the corrosion temperature is 60°C, and the corrosion time is 80min;

[0039](3) After the etching is finished, both surfaces of the silicon wafer are silicon nanowire arrays with a length of 60 μm, and the middle is a silicon wafer with a thickness of 120 μm without corrosion. The silicon nanowires on both sides are ground away with fine sandpaper, and repeated after clean...

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Abstract

The invention discloses a method for preparing a lithium ion battery anode with high performance, i.e. a method for preparing a silicon nanowire array membrane electrode, comprising the following steps of: catalyzing corroded silicon wafers by a metal, and corroding a monocrystalline silicon piece into a silicon nanowire array membrane completely consisting of the silicon nanowire through corrosion twice; and preparing into the electrode by using two different techniques, wherein two different techniques are as follows: 1, plating an aluminum membrane at the back side of the silicon nanowire array membrane by using a method of vacuum thermal evaporation; annealing to form an Si-Al alloy which is used as a current collector; and 2, covering a carbon aerogel on the surface of the silicon nanowire array membrane, pyrolyzing the carbon aerogel into the carbon through vacuum sintering and using the carbon aerogel as a current collector. The silicon nanowire array membrane is used as the lithium ion battery assembled with the anode and has the advantages of large lithium storage capacity, high Kulun efficiency, favorable circulation stability, convenient operation, and favorable repeatability without complicated apparatus.

Description

technical field [0001] The invention relates to a preparation method of a high-performance lithium-ion battery anode, in particular to a preparation method of a high-performance lithium-ion battery anode-silicon nanowire array membrane electrode. Background technique [0002] Rechargeable lithium-ion batteries are important devices in today's information-based mobile society. They are used in portable electronic equipment, electric vehicles and medical equipment. One of the major challenges in designing electrode materials is to combine high Li-ion storage capacity with good cycling performance. Commercial graphitic carbon has good cycle performance, but low capacity (372mAh g -1 ). Silicon-based lithium-ion battery anodes have high capacity (4200mAh g -1 ) has received widespread attention. However, silicon undergoes a large volume change (>300%) during charge and discharge. Such a large volume change would cause the electrodes to shatter and detach from the curren...

Claims

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Application Information

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IPC IPC(8): H01M4/04H01M4/38H01M4/66
CPCY02E60/12Y02E60/10
Inventor 黄睿朱静
Owner TSINGHUA UNIV
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