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Alcohol-free alkaline texturing solution for mono-crystalline silicon wafer, texturing method for mono-crystalline silicon wafer, solar cell and manufacturing method for solar cell

A technology for solar cells and monocrystalline silicon wafers, applied in the field of solar cells, can solve the problems of unqualified corrosion depth, non-uniformity, and high requirements for airtightness, so as to increase the absorption of light, enhance anisotropy, and improve conversion efficiency. Effect

Inactive Publication Date: 2014-03-05
YINGLI ENERGY CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, with the widespread application of diamond wire-cut silicon wafers, considering the advantages of diamond wire-cut silicon wafers, people no longer use the existing multi-wire unidirectional cutting process.
However, the existing problem is that the damage layer on the surface of the silicon wafer after diamond wire cutting is reduced. If the above-mentioned alkaline texturing liquid is used for texturing, the corrosion rate on the surface of the silicon wafer will be slowed down and uneven, and the corrosion depth will be reduced. Unqualified, which eventually leads to the uneven size of the structured structure pyramid on the surface of the silicon wafer, which in turn reduces the conversion efficiency of the solar cell
In addition, isopropanol is a colorless, transparent, volatile liquid with an odor similar to a mixture of ethanol and acetone. Its vapor can slightly irritate the eyes, nose and throat, and can also be absorbed by the human body through the skin, and isopropanol is volatile. Therefore, in the production process, the airtightness of the equipment is required to be high. After treatment, the waste liquid containing isopropanol is also one of the important sources of pollution in the industry. The follow-up pollution treatment costs are high, which does not meet the company's energy-saving emission reduction and green pollution-free. Require

Method used

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  • Alcohol-free alkaline texturing solution for mono-crystalline silicon wafer, texturing method for mono-crystalline silicon wafer, solar cell and manufacturing method for solar cell
  • Alcohol-free alkaline texturing solution for mono-crystalline silicon wafer, texturing method for mono-crystalline silicon wafer, solar cell and manufacturing method for solar cell
  • Alcohol-free alkaline texturing solution for mono-crystalline silicon wafer, texturing method for mono-crystalline silicon wafer, solar cell and manufacturing method for solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] Dissolve 50ml of sodium hydroxide solution with a mass percentage concentration of 46% and 10ml of alcohol-free additives (the model is TS42, provided by Changzhou Shichuang Energy Technology Co., Ltd.) in deionized water to prepare an alcohol-free alkaline texturing solution, wherein The mass percentage concentration of the sodium hydroxide solution is 4%, and the mass percentage concentration of the alcohol-free additive solution is 0.5%.

[0042] Using a mixture of hydrogen peroxide and sodium hydroxide (V 双氧水 :V 氢氧化钠 :V 水 =1.5:7:115) Pre-clean the monocrystalline silicon wafer after diamond wire cutting for 3 minutes, and then wash it with water for 3 minutes. After washing, the monocrystalline silicon wafer enters the surface of the texturing tank containing the above alcohol-free alkaline texturing solution Texturing is maintained for 17 minutes, and the temperature of the alkaline texturing solution is 80°C.

[0043] The monocrystalline silicon chip after the ...

Embodiment 2

[0045] Dissolve 50ml of sodium hydroxide solution with a mass percentage concentration of 46% and 10ml of alcohol-free additives (the model is TS42, provided by Changzhou Shichuang Energy Technology Co., Ltd.) in deionized water to prepare an alcohol-free alkaline texturing solution, wherein The mass percentage concentration of the sodium hydroxide solution is 3%, and the mass percentage concentration of the alcohol-free additive solution is 0.4%.

[0046] Using a mixture of hydrogen peroxide and sodium hydroxide (V 双氧水 :V 氢氧化钠 :V 水 =1.5:7:115) Pre-clean the monocrystalline silicon wafer after diamond wire cutting for 5 minutes, and then wash it with water for 5 minutes. After washing, the monocrystalline silicon wafer enters the surface of the texturing tank containing the above alcohol-free alkaline texturing solution Texturing is maintained for 13 minutes, and the temperature of the alkaline texturing solution is 90°C.

[0047] The monocrystalline silicon chip after the ...

Embodiment 3

[0049] Dissolve 50ml of sodium hydroxide solution with a mass percentage concentration of 46% and 10ml of alcohol-free additives (the model is TS42, provided by Changzhou Shichuang Energy Technology Co., Ltd.) in deionized water to prepare an alcohol-free alkaline texturing solution, wherein The mass percent concentration of the sodium hydroxide solution is 5%, and the mass percent concentration of the alcohol-free additive solution is 0.65%.

[0050] Using a mixture of hydrogen peroxide and sodium hydroxide (V 双氧水 :V 氢氧化钠 :V 水 =1.5:7:115) Pre-clean the monocrystalline silicon wafer after diamond wire cutting for 5 minutes, and then wash it with water for 5 minutes. Hold for 13 minutes, the temperature of the alkaline texturing solution is 85°C.

[0051] The monocrystalline silicon chip after the texturing enters in the washing tank and washes for 5 minutes, then is sent into the pickling tank that fills 40wt% hydrofluoric acid and 30wt% hydrochloric acid mixed solution (th...

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Abstract

The invention discloses an alcohol-free alkaline texturing solution for a mono-crystalline silicon wafer, a texturing method for the mono-crystalline silicon wafer, a solar cell and a manufacturing method for the solar cell. The alcohol-free alkaline texturing solution for the mono-crystalline silicon wafer comprises an alkaline solution and a texturing additive, wherein the texturing additive is an alcohol-free additive. According to the alcohol-free alkaline texturing solution, isopropanol which is harmful to human bodies and the environment adopted in the conventional alkaline texturing solution is abandoned; the corrosion depth of the surface of a silicon wafer can be controlled within the range of 5 to 7.5 mu m easily by performing surface texturing on the mono-crystalline silicon wafer obtained by performing linear cutting on a diamond by only adopting the alcohol-free alkaline texturing solution consisting of the alkaline solution and the alcohol-free additive; meanwhile, the corrosion speed is guaranteed; the anisotropy of corrosion is enhanced; pyramid structures on the surface of the silicon wafer obtained after the texturing are small and uniform in size, so that the reflectivity of the surface of the silicon wafer is reduced by about 1 percent; the light absorption capacity of the surface of the silicon wafer is increased; the conversion efficiency of the solar cell is improved.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to an alcohol-free alkaline texturing solution for monocrystalline silicon wafers, a texturing method, solar cells and a manufacturing method thereof. Background technique [0002] In the production process of solar cells, in order to improve the performance and efficiency of solar cells, it is necessary to make a textured surface on the surface of the silicon wafer. The effective textured structure can make the incident sunlight reflect and refract multiple times on the surface of the silicon wafer, changing the incident light In the direction of progress in the silicon wafer, on the one hand, the optical path is extended, and the absorption rate of infrared light by the silicon wafer is increased; on the other hand, more photons are absorbed in the area near the p-n junction to generate photogenerated carriers. Photogenerated carriers are more easily collected, thus increasing...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/10C23F1/32H01L31/18
CPCY02P70/50
Inventor 闫英丽汤欢范志东
Owner YINGLI ENERGY CHINA
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