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Monocrystalline silicon wafer alcohol-free texturing process and texturing additive

A monocrystalline silicon wafer and additive technology, which is applied in the field of solar cells, can solve the problems of large volatilization, unclean appearance of suede surface, high proportion of white spots and fingerprints on suede surface, etc., to reduce the proportion of white spots and white spots, and reduce rework of suede surface The effect of reducing the cost of cashmere

Active Publication Date: 2015-04-29
JIANGSU SHUNFENG PHOTOVOLTAIC TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Its disadvantages are: non-uniform texturing pyramid, high requirements on the surface state of the original silicon wafer, relatively large chemical consumption, difficult control of the texturing process, large volatilization of isopropanol, etc., need to continuously adjust liquid, and difficult operation. As a result, the rework rate of the textured appearance is very high, and the conversion rate of the cell is low.
Although the above two additives do not need to add isopropanol, which reduces the COD of the velvet waste liquid and reduces the cost of velvet, but there are high proportions of white spots and fingerprints on the velvet surface after velvet making, and the appearance of the velvet surface is relatively high. unclean problem

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] Use pentaerythritol, sodium lignosulfonate, triethanolamine and deionized water to prepare single crystal texture additives, wherein the concentration of pentaerythritol is 0.2wt%, the concentration of sodium lignosulfonate is 0.1%, and the concentration of triethanolamine is 0.5wt% %, then add the formulated texturizing additive to 1wt% sodium hydroxide aqueous solution, the mass ratio of alcohol-free single crystal texturing additive to deionized water is 1:100, and then heat the texturing solution to 75 ℃. A pretreatment solution was prepared by using hydrogen peroxide, ammonia water and deionized water, wherein the concentration of hydrogen peroxide was 1 wt%, and the concentration of ammonia water was 0.5 wt%, and the pretreatment solution was heated to 60°C. First put the monocrystalline silicon wafer with an area of ​​156mm×156mm and a thickness of about 200um into the pretreatment solution for pretreatment. The pretreatment time is 150s, then the silicon wafer i...

Embodiment 2

[0019] Use pentaerythritol, sodium lignosulfonate, triethanolamine and deionized water to prepare a single crystal texture additive, wherein the concentration of pentaerythritol is 0.4wt%, the concentration of sodium lignosulfonate is 0.3%, and the concentration of triethanolamine is 0.5wt% %, then the prepared texturing additive is added to the sodium hydroxide aqueous solution of mass fraction 1.5wt%, the mass ratio of alcohol-free single crystal texturing additive and deionized water is 1.5:100, then this texturing liquid is heated to 80°C. Sodium hypochlorite, sodium hydroxide and deionized water are used to prepare a pretreatment solution, wherein the concentration of sodium hypochlorite is 1 wt%, and the concentration of sodium hydroxide is 0.5 wt%, and the pretreatment solution is heated to 70°C. First put the monocrystalline silicon wafer with an area of ​​156mm×156mm and a thickness of about 200um into the pretreatment solution for pretreatment. The pretreatment time ...

Embodiment 3

[0021] Use pentaerythritol, sodium lignosulfonate, triethanolamine and deionized water to prepare a single crystal texture additive, wherein the concentration of pentaerythritol is 0.6wt%, the concentration of sodium lignosulfonate is 0.5%, and the concentration of triethanolamine is 1wt%. , then the prepared texturing additive is added to the sodium hydroxide aqueous solution of mass fraction 2wt%, the mass ratio of alcohol-free single crystal texturing additive and deionized water is 2:100, then this texturing liquid is heated to 75 ℃ . Hypochlorous acid, sodium carbonate and deionized water are used to prepare a pretreatment solution, wherein the concentration of hypochlorous acid is 1 wt%, and the concentration of sodium carbonate is 0.5 wt%, and the pretreatment solution is heated to 70°C. First put a single crystal silicon wafer with an area of ​​156mm×156mm and a thickness of about 200um into the pretreatment solution for pretreatment. The pretreatment time is 150s, the...

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PUM

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Abstract

The invention relates to a monocrystalline silicon wafer alcohol-free texturing process and a texturing additive. Firstly, a silicon wafer is placed in preprocessing liquid so as to be preprocessed for 60 s to 300 s, and the silicon wafer is then placed in texturing liquid for texturing. The monocrystalline silicon texturing process includes the steps that deionized water is heated to 70 DEG C to 90 DEG C, sodium hydroxide or potassium hydroxide is added, and monocrystalline silicon texturing corrosive liquid is acquired. When the texturing additive is adopted for texturing, isopropanol or ethyl alcohol is not needed, tiny, even and dense pyramid texturing faces can be acquired, texturing cost is reduced, and environmental pollution is avoided. The preprocessing process is added before the texturing step, the silicon wafer acquired after texturing can be cleaner, rework caused by white spot fingerprints and the like can be reduced, and certain practical value is achieved.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to an alcohol-free texturing process for monocrystalline silicon wafers and a texturing additive thereof. Background technique [0002] In the process of solar cell preparation, in order to improve the efficiency of solar cells, it is necessary to make a textured surface on the surface of the single crystal silicon wafer. The effective textured structure can make the incident sunlight form secondary reflection or multiple reflections on the surface of the silicon wafer, increasing the light intensity. The utilization rate makes more photons be absorbed in the area near the pn junction to generate photo-generated carriers, and these photo-generated carriers are easier to be collected, thus increasing the collection efficiency of photo-generated carriers. [0003] Conventional texturing process generally uses sodium hydroxide or potassium hydroxide, adding appropriate mixed solution of isop...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18C30B33/10
CPCH01L31/0236Y02P70/50
Inventor 瞿辉徐春曹玉甲吕晓华
Owner JIANGSU SHUNFENG PHOTOVOLTAIC TECH CO LTD
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