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Texturing pretreatment liquid and texturing pretreatment method for diamond wire cutting polycrystalline silicon sheet, texturing pretreatment silicon sheet and application of texturing pretreatment silicon sheet

A technology of diamond wire cutting and polysilicon wafers, which is applied in post-processing, post-processing details, chemical instruments and methods, etc., can solve the problems of low-reflectivity suede, achieve simple proportioning, strong operability, and pre-treatment of suede The effect of simple method

Active Publication Date: 2015-04-29
滁州赛维能源科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Aiming at the fact that diamond wire-cut polysilicon wafers cannot form a uniform and low-reflectivity textured surface by using the existing RENA texturing process in the battery manufacturing process, the invention provides a texturing pretreatment liquid for diamond wire-cut polysilicon wafers, a texturing pretreatment Treatment method and texturing pretreatment silicon wafer and its application

Method used

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  • Texturing pretreatment liquid and texturing pretreatment method for diamond wire cutting polycrystalline silicon sheet, texturing pretreatment silicon sheet and application of texturing pretreatment silicon sheet
  • Texturing pretreatment liquid and texturing pretreatment method for diamond wire cutting polycrystalline silicon sheet, texturing pretreatment silicon sheet and application of texturing pretreatment silicon sheet
  • Texturing pretreatment liquid and texturing pretreatment method for diamond wire cutting polycrystalline silicon sheet, texturing pretreatment silicon sheet and application of texturing pretreatment silicon sheet

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Embodiment 1

[0079] A kind of texturing pretreatment method of diamond wire cut polysilicon chip, comprises the steps:

[0080] (1) Prepare the first and second treatment solutions:

[0081] Mix hydrofluoric acid, hydrogen peroxide, silver nitrate and water to obtain the first treatment solution, wherein the molar concentration of silver ions is 15 μmol / L, the volume ratio of hydrofluoric acid, hydrogen peroxide and water is 3:13:8, and the hydrofluoric acid The mass concentration of acid is 49%, and the mass concentration of hydrogen peroxide is 30%;

[0082] Prepare nitric acid and strong alkali solutions respectively to obtain the second treatment solution A, wherein the mass concentration of nitric acid is 10%, and the mass concentration of strong alkali is 5%;

[0083] (2) Pretreatment:

[0084] a. Preparation of porous silicon structure:

[0085] Take the polycrystalline silicon wafer cut by diamond wire, wash it with a dilute HF solution with a concentration of 10%, remove the oi...

Embodiment 2

[0099] A kind of texturing pretreatment method of diamond wire cut polysilicon chip, comprises the steps:

[0100] (1) Prepare the first and second treatment solutions:

[0101] Mix hydrofluoric acid, hydrogen peroxide, silver nitrate and water to obtain the first treatment solution, wherein the molar concentration of silver ions is 15 μmol / L, the volume ratio of hydrofluoric acid, hydrogen peroxide and water is 3:13:8, and the hydrofluoric acid The mass concentration of acid is 49%, and the mass concentration of hydrogen peroxide is 30%;

[0102] Mix nitric acid, hydrofluoric acid and water to obtain the second treatment liquid B, wherein the volume ratio of nitric acid, hydrofluoric acid and water is 30:1:100;

[0103] (2) Pretreatment:

[0104] a. Preparation of porous silicon structure:

[0105] Take the polycrystalline silicon wafer cut by diamond wire, wash it with a dilute HF solution with a concentration of 10%, remove the oil stain and oxide layer on the surface of...

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Abstract

The invention provides texturing pretreatment liquid for a diamond wire cutting polycrystalline silicon sheet. The texturing pretreatment liquid comprises first treatment liquid and second treatment liquid A or B, wherein the first treatment liquid is a mixed solution of hydrofluoric acid, hydrogen peroxide, metal salt and water; the treatment liquid A comprises nitric acid and strong alkali; the treatment liquid B is a mixed solution of nitric acid, hydrofluoric acid and water. The invention further provides a texturing pretreatment method for the diamond wire cutting polycrystalline silicon sheet. The surface of the silicon sheet is treated by the pretreatment liquid to form a uniform damaged layer to obtain the texturing pretreatment silicon sheet. The invention further provides a texturing method for the diamond wire cutting polycrystalline silicon sheet. The texturing pretreatment silicon sheet is subjected to conventional texturing treatment, so that a uniform and low-reflexibility textured surface is formed on the surface of the silicon sheet, and a diamond wire cutting polycrystalline silicon sheet product is obtained. The invention further provides the texturing pretreatment silicon sheet and the diamond wire cutting polycrystalline silicon sheet product.

Description

technical field [0001] The invention belongs to the technical field of texturing of polycrystalline silicon wafers, and in particular relates to a texturing pretreatment liquid for polycrystalline silicon wafers cut by diamond wires, a method for texturing pretreatment, silicon wafers for texturing pretreatment and applications thereof. Background technique [0002] Silicon wafers are widely used in photovoltaic solar energy, liquid crystal display and semiconductor fields, so the technology of cutting silicon blocks to make silicon wafers has also been developed. At present, the cutting of crystalline silicon wafers used in the photovoltaic industry mainly adopts the mortar multi-wire cutting technology, but this technology has problems such as low cutting process efficiency, high cost, and large discharge pollution of waste mortar after cutting. In contrast, solid abrasive diamond wire saw cutting (referred to as diamond wire cutting) technology has the characteristics of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18C30B33/10
CPCC30B33/10H01L31/18Y02P70/50
Inventor 章金兵付红平彭也庆
Owner 滁州赛维能源科技有限公司
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