Texturing process for polycrystalline silicon solar cell slice

A technology for solar cells and polycrystalline silicon, which is applied in sustainable manufacturing/processing, circuits, crystal growth, etc., and can solve the problems of high reflectivity of silicon wafers, unfavorable photoelectric conversion efficiency of polycrystalline silicon solar cells, and poor texture uniformity.

Inactive Publication Date: 2014-10-01
邬时伟
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to improve the photoelectric conversion efficiency of solar cells, silicon wafers need to be chemically treated to make the silicon surface into a suede surface with a certain shape. However, according to the prior art, when polycrystalline silicon solar cells are manufactured After velvet, the reflectance of the obtained silicon wafer is high, generally above 25%, and the uniformity of the velvet surface is poor, which is not conducive to improving the photoelectric conversion efficiency of polycrystalline silicon solar cells.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] A texturing process for polycrystalline silicon solar cells, comprising the following steps in sequence:

[0023] (1) Spraying a layer of silicon dioxide particles with a particle size of 300nm on the surface of the silicon wafer;

[0024] (2) Carry out 90s primary texturing in a mixed solution containing nitric acid and hydrofluoric acid, wherein the ratio of nitric acid and hydrofluoric acid is 5:1;

[0025] (3) Clean the silicon chip first, then remove the acid for 100 s in a 5% sodium hydroxide solution by mass fraction, and then clean again after the acid removal;

[0026] (4) Carry out secondary texturing for 60s in a mixed solution containing nitric acid and hydrofluoric acid, wherein the ratio of nitric acid and hydrofluoric acid is 4:1;

[0027] (5) Clean the silicon wafer first, and then deacidify it in a sodium hydroxide solution with a mass fraction of 5% for 120 seconds. After deacidification, clean it, and dry it at 35° C. for 60 seconds after cleaning. ...

Embodiment 2

[0030] A texturing process for polycrystalline silicon solar cells, comprising the following steps in sequence:

[0031] (1) Spraying a layer of silicon dioxide particles with a particle size of 400nm on the surface of the silicon wafer;

[0032] (2) Carry out 90s primary texturing in a mixed solution containing nitric acid and hydrofluoric acid, wherein the ratio of nitric acid and hydrofluoric acid is 5:1;

[0033] (3) Clean the silicon chip first, then remove the acid for 100 s in a 5% sodium hydroxide solution by mass fraction, and then clean again after the acid removal;

[0034] (4) Carry out secondary texturing for 60s in a mixed solution containing nitric acid and hydrofluoric acid, wherein the ratio of nitric acid and hydrofluoric acid is 4:1;

[0035] (5) Clean the silicon wafer first, and then deacidify it in a sodium hydroxide solution with a mass fraction of 5% for 120 seconds. After deacidification, clean it. After cleaning, dry it at 35° C. for 90 seconds.

[...

Embodiment 3

[0038] A texturing process for polycrystalline silicon solar cells, comprising the following steps in sequence:

[0039] (1) Spraying a layer of silicon dioxide particles with a particle size of 500nm on the surface of the silicon wafer;

[0040] (2) Carry out 90s primary texturing in a mixed solution containing nitric acid and hydrofluoric acid, wherein the ratio of nitric acid and hydrofluoric acid is 5:1;

[0041] (3) Clean the silicon chip first, then remove the acid for 100 s in a sodium hydroxide solution with a mass fraction of 10%, and then clean it again after removing the acid;

[0042] (4) Carry out secondary texturing for 60s in a mixed solution containing nitric acid and hydrofluoric acid, wherein the ratio of nitric acid and hydrofluoric acid is 4:1;

[0043] (5) Clean the silicon wafer first, and then deacidify it in a sodium hydroxide solution with a mass fraction of 10% for 120s. After deacidifying, clean it, and dry it at 35°C for 120s after cleaning.

[00...

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Abstract

The invention discloses a texturing process for a polycrystalline silicon solar cell slice. The texturing process comprises the following steps of (1) spraying a layer of silicon dioxide particles on the surface of a silicon wafer; (2) carrying out primary texturing in a mixed solution containing nitric acid and hydrofluoric acid; (3) deacidifying in a sodium hydroxide solution; (4) carrying out secondary texturing in a mixed solution containing nitric acid and hydrofluoric acid; (5) deacidifying again in a sodium hydroxide solution. The solar cell slice produced by using the process is low in reflectivity, uniform in fabric surface and increased in photoelectric conversion efficiency.

Description

technical field [0001] The invention relates to the field of making solar cells, in particular to a texturing process for polycrystalline silicon solar cells. Background technique [0002] In recent years, polycrystalline silicon solar cells have been more and more widely used due to their high conversion efficiency, stable performance and moderate cost, and their output has surpassed that of monocrystalline silicon, occupying a dominant position in the market. [0003] In order to improve the photoelectric conversion efficiency of solar cells, silicon wafers need to be chemically treated to make the silicon surface into a suede surface with a certain shape. However, according to the prior art, when polycrystalline silicon solar cells are manufactured After velvet, the reflectance of the obtained silicon wafer is relatively high, generally more than 25%, and the uniformity of the velvet surface is poor, which is not conducive to improving the photoelectric conversion efficie...

Claims

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Application Information

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IPC IPC(8): C30B33/10H01L31/18
CPCY02P70/50
Inventor 邬时伟
Owner 邬时伟
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