The present application belongs to the technical field of solar cells, and relates to a
heterojunction solar cell, which comprises, from a light-facing side to a back light-facing side, a first
electrode, a first conductive film layer, an N-type
semiconductor film layer, an intrinsic film layer, a
semiconductor substrate, a tunneling
oxide layer, a P-type carbon-doped
semiconductor film layer, a high-concentration P-type doped semiconductor film layer, a second conductive film layer, and a second
electrode; the first conductive film layer fully covers the N-type semiconductor film layer, and the first
electrode is electrically connected to the N-type semiconductor film layer through the first conductive film layer; the second conductive film layer fully covers the high-concentration P-type doped semiconductor film layer, and the second electrode is electrically connected to the high-concentration P-type doped semiconductor film layer through the second conductive film layer. The present application aims to provide a
heterojunction solar cell, which can improve the electrical
power loss caused by the carrier transmission on the back of the
cell and improve the
cell efficiency.