Polycrystalline black silicon texturization treatment fluid, polysilicon chip texturization method applying treatment fluid, and polycrystalline black silicon texturization product

A polycrystalline silicon wafer and treatment liquid technology, applied in the directions of post-processing, post-processing details, polycrystalline material growth, etc., can solve the problems of the surface area and uniformity need to be improved, the texturing reaction process is not easy to control, the minority carrier compound is serious, etc. The effect of enhanced light effect, low cost and high conversion efficiency

Inactive Publication Date: 2015-12-16
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0004] In the wet etching technology, the method of metal-catalyzed corrosion is more and more widely used. However, the surface area and uniformity of the polycrystalline black silicon tex

Method used

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  • Polycrystalline black silicon texturization treatment fluid, polysilicon chip texturization method applying treatment fluid, and polycrystalline black silicon texturization product
  • Polycrystalline black silicon texturization treatment fluid, polysilicon chip texturization method applying treatment fluid, and polycrystalline black silicon texturization product
  • Polycrystalline black silicon texturization treatment fluid, polysilicon chip texturization method applying treatment fluid, and polycrystalline black silicon texturization product

Examples

Experimental program
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Effect test

Embodiment 1

[0075] Mix 50wt% hydrofluoric acid solution, 65wt% nitric acid solution and water at a volume ratio of 1:6:10 to obtain hydrofluoric acid nitric acid texturing solution. The polysilicon wafer cut by mortar is placed in hydrofluoric acid nitric acid texturizing solution for texturing treatment. The time of the texturing treatment is 100 seconds, and the temperature of the texturing treatment is 12°C. Then rinse with deionized water for 2 minutes. figure 1 It is the scanning electron micrograph of the textured silicon wafer textured product.

[0076] Putting the textured silicon chip into the polycrystalline black silicon texturing solution for black silicon treatment, so as to form a uniform porous structure on the surface of the silicon chip. The polycrystalline black silicon texturing treatment solution includes 50wt% hydrofluoric acid solution, 30wt% hydrogen peroxide solution and silver nitrate. Wherein, the volume ratio of the hydrofluoric acid solution and the hydrogen...

Embodiment 2

[0079] Mix 40wt% hydrofluoric acid solution, 68wt% nitric acid solution and water at a volume ratio of 3:8:10 to obtain hydrofluoric acid nitric acid texturing solution. The polysilicon wafer cut by mortar is placed in hydrofluoric acid nitric acid texturizing solution for texturing treatment. The time of the texturing treatment is 150 seconds, and the temperature of the texturing treatment is 10°C. Then rinse with deionized water for 2 minutes.

[0080] Putting the textured silicon chip into the polycrystalline black silicon texturing solution for black silicon treatment, so as to form a uniform porous structure on the surface of the silicon chip. The polycrystalline black silicon texturing treatment liquid includes 40wt% hydrofluoric acid solution, 30wt% hydrogen peroxide solution and copper nitrate. Wherein, the volume ratio of the hydrofluoric acid solution and the hydrogen peroxide solution is 5:30, and the molar concentration of copper nitrate in the polycrystalline bl...

Embodiment 3

[0083] Mix 40wt% hydrofluoric acid solution and 30wt% hydrogen peroxide solution at a volume ratio of 3:20, and add silver nitrate to obtain a texturing pretreatment solution. The concentration of silver nitrate in the texturing pretreatment liquid is 100 μmol / L, the reaction time is 65 seconds, and the reaction temperature is 20° C.

[0084] The diamond-wire-cut polysilicon wafer is placed in a texturing pretreatment solution for pretreatment, the pretreatment temperature is 25° C., and the pretreatment time is 1 minute. Then rinse with deionized water for 2 minutes.

[0085] Mix 40wt% hydrofluoric acid solution, 68wt% nitric acid solution and water at a volume ratio of 5:8:15 to obtain hydrofluoric acid nitric acid texturing solution. The polysilicon wafer cut by mortar is placed in hydrofluoric acid nitric acid texturizing solution for texturing treatment. The time of the texturing treatment is 120 seconds, and the temperature of the texturing treatment is 6°C. Then rins...

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Abstract

The invention provides a polycrystalline black silicon texturization treatment fluid. The polycrystalline black silicon texturization treatment fluid comprises a hydrofluoric acid solution, a hydrogen peroxide solution and a metal salt, wherein a volume ratio of the hydrofluoric acid solution to the hydrogen peroxide solution is 1-25:5-40, the mass fraction of hydrofluoric acid in the hydrofluoric acid solution is 40-50%, the mass fraction of hydrogen peroxide in the hydrogen peroxide solution is 20-55%, the metal salt is at least one of copper nitrate, silver nitrate, palladium nitrate, copper chloride, auric chloride acid, chloroplatinic acid, potassium chromate and nickel sulfate, and the mole concentration of the metal salt is 1-10<5>[mu]mol/L. The invention also provides a polysilicon chip texturization method applying the polycrystalline black silicon texturization treatment fluid, and a polycrystalline black silicon texturization product.

Description

technical field [0001] The invention relates to the field of texturing of crystalline silicon solar cells, in particular to the technical field of texturing of polycrystalline black silicon. Background technique [0002] In recent years, black silicon texturing technology has attracted widespread attention in the photovoltaic industry because it can achieve lower surface reflectivity in the full band, thereby increasing the short-circuit current of solar cells. There is an efficiency gap of about 1% between polycrystalline silicon solar cells and monocrystalline silicon solar cells. Among them, the high reflectivity of polycrystalline silicon after texturing is an important reason for this gap. It is an urgent need to use black silicon texturing technology to improve the efficiency of polycrystalline silicon solar cells. key issues to be resolved. [0003] There are dry and wet etching methods to realize polycrystalline black silicon texture. Among them, dry etching is main...

Claims

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Application Information

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IPC IPC(8): C30B33/10C30B29/06C23F1/14H01L31/18
CPCY02P70/50
Inventor 叶继春高平奇廖明墩应智琴韩灿
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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