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Additives and applications of pore-enlarging acid solution for polycrystalline black silicon texture

An additive and pore-expanding acid technology, which is applied in the additive field of pore-expanding acid solution for polycrystalline black silicon texturing, can solve the influence of nano texture uniformity, the decrease of black silicon texturing approval, and the too fast response of hole expansion treatment. and other problems, to achieve the effect of improving battery efficiency, consistent opening direction, and uniform appearance

Active Publication Date: 2018-08-14
CHANGZHOU SHICHUANG ENERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Hole reaming treatment generally adopts reaming acid solution, currently commonly used reaming acid solution is a single-component acid solution or a mixture of several acids (such as a mixture of nitric acid and hydrofluoric acid), although these pore reaming acid solutions can To a certain extent, the purpose of hole expansion is achieved, but the reaction of hole expansion treatment is too fast and difficult to control, which affects the uniformity of the nano suede surface; at the same time, the anisotropic corrosion of the hole expansion acid will make the surface of black silicon serious, Seriously affected the appearance of polycrystalline black silicon, greatly reducing the user's recognition of black silicon texture

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  • Additives and applications of pore-enlarging acid solution for polycrystalline black silicon texture

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Embodiment Construction

[0030] The specific embodiments of the present invention will be further described below in conjunction with the drawings and embodiments. The following embodiments are only used to explain the technical solutions of the present invention more clearly, and cannot be used to limit the protection scope of the present invention.

[0031] The technical scheme of the present invention is:

[0032] The present invention provides an additive for pore-expanding acid solution for polycrystalline black silicon texturing. The mass percentage of each component is: polyvinyl alcohol 0.5%-2%, triethanolamine 1%-5%, and tartaric acid 1% ~3%, silane coupling agent 0.5%~2%, the balance is water.

[0033] Preferably, the silane coupling agent is selected from one or more of KH550, KH560 and KH570.

[0034] Preferably, the water is deionized water.

[0035] The present invention also provides a pore expanding acid solution for polycrystalline black silicon texturing, which contains an acid solution and ...

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Abstract

The invention provides an additive for chambering acid liquid for texturing polycrystal black silicon. The additive comprises the following components in percentage by mass: 0.5%-2% of polyvinyl alcohol, 1%-5% of triethanolamine, 1%-3% of tartaric acid, 0.5%-2% of a silane coupling agent and the balance of water. The invention further provides the chambering acid liquid adopting the additive and a method for texturing polycrystal black silicon. By adding the additive into the chambering acid liquid, the reaction of the chambering treatment can be decelerated, and the reaction rates of the chambering acid liquid on crystal surfaces of the polycrystal black silicon can be furthest kept consistent, so that the anisotropic corrosion is inhibited, crystal patterns of the polycrystal black silicon are obviously improved, and the appearance superiority and the performance superiority of the black silicon are embodied.

Description

Technical field [0001] The invention relates to an additive for a hole-expanding acid solution for polycrystalline black silicon texturing and its application. Background technique [0002] At present, in the process flow of polycrystalline black silicon texturing, the method of metal-assisted wet chemical etching is more and more widely used. Using metal-assisted wet chemical etching can prepare polycrystalline black silicon with nano-holes. . [0003] Metal-assisted wet chemical etching generally uses metal ions. Since metal particles are relatively small, only a few nanometers to tens of nanometers, the corresponding nano-holes generated on polycrystalline black silicon have a diameter of only a few nanometers to tens of nanometers. In order to increase the coverage of the suede surface, reduce the recombination of the silicon wafer surface, and improve the electrical performance of the solar cell, it is necessary to expand the polycrystalline black silicon obtained by metal-as...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B33/10C30B29/06C23F1/24
CPCC09K13/06C30B29/06C30B33/10
Inventor 章圆圆裴银强
Owner CHANGZHOU SHICHUANG ENERGY CO LTD
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