One-step wet black silicon preparation and surface treatment method

A surface treatment, black silicon technology, applied in the field of solar cells, can solve problems such as increased leakage, affecting direct industrial application, and drop in open-circuit voltage of solar cells, achieving low battery leakage rate, solving the bottleneck of mass industrialization, and low cost. Effect

Active Publication Date: 2016-10-12
湖州三峰能源科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] However, the suede obtained by the above methods has a mixed structure of micron and nanometers, which has limitations in terms of uniformity and electrical properties.
In particular, there are serious...

Method used

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  • One-step wet black silicon preparation and surface treatment method
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  • One-step wet black silicon preparation and surface treatment method

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Comparison scheme
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Embodiment 1

[0057] Wet black silicon preparation and surface treatment method comprises the following steps:

[0058] (1) De-damage layer: Select a P-type polysilicon wafer (boron-doped, 1-3Qcm, 156X156mm square, thickness 180μm). Since the polysilicon wafer is cut with a diamond wire saw, it is necessary to perform alkali etching on the silicon wafer to remove damage Floor;

[0059] (2) Preparation of black silicon: Rinse the product wafer of step (1) with deionized water; after blowing dry, put it into the corrosion solution and react for 200 seconds at room temperature to prepare black silicon; wherein, the corrosion solution is metal ion-containing Mixed aqueous solution of concentrated hydrofluoric acid, oxidant and polymer; metal ions are derived from HAuCl 4 and AgNO 3 The combination of HAuCl4 and AgNO3 are electronic grade products, the weight ratio of HAuCl4 and AgNO3 is 1:6, the total content of HAuCl4 and AgNO3 in the solution is 0.01mol / L; the oxidant is hydrogen peroxide; ...

Embodiment 2

[0065] Wet black silicon preparation and surface treatment method comprises the following steps:

[0066] (1) De-damage layer: Select a P-type polysilicon wafer (boron-doped, 1-3Qcm, 156X156mm square, thickness 180μm). Since the polysilicon wafer is cut with a diamond wire saw, it is necessary to perform alkali etching on the silicon wafer to remove damage Floor;

[0067] (2) Preparation of black silicon: Rinse the product wafer of step (1) with deionized water; after blowing dry, put it into the corrosion solution and react for 200 seconds at room temperature to prepare black silicon; wherein, the corrosion solution is metal ion-containing Mixed aqueous solution of concentrated hydrofluoric acid, oxidant and polymer; metal ions are derived from HAuCl 4 and AgNO 3 The combination of HAuCl4 and AgNO3 are electronic grade products, the weight ratio of HAuCl4 and AgNO3 is 1:5, the total content of HAuCl4 and AgNO3 in the solution is 0.007mol / L; the oxidant is hydrogen peroxide;...

Embodiment 3

[0073] Wet black silicon preparation and surface treatment method comprises the following steps:

[0074] (1) De-damage layer: Select a P-type polysilicon wafer (boron-doped, 1-3Qcm, 156X156mm square, thickness 180μm). Since the polysilicon wafer is cut with a diamond wire saw, it is necessary to perform alkali etching on the silicon wafer to remove damage Floor;

[0075] (2) Preparation of black silicon: Rinse the product wafer of step (1) with deionized water; after drying, put it into the corrosion solution and react for 300 seconds at 10°C to prepare black silicon; wherein, the corrosion solution contains metal ions The mixed aqueous solution of concentrated hydrofluoric acid, oxidant and high molecular polymer; the metal ion is derived from the combination of potassium chloroplatinate and palladium acetate, both of which are electronic grade products, potassium chloroplatinate and palladium acetate The weight ratio is 1:5, and the total content of potassium chloroplatina...

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Abstract

The invention provides a one-step wet black silicon preparation and surface treatment method, which comprises the steps of enabling a silicon wafer with a surface damage layer being removed to be immerged into a corrosive liquid so as to prepare black silicon through reaction, wherein the corrosive liquid is a mixed aqueous solution of a metal ion containing concentrated hydrofluoric acid, an oxidizing agent and a high-molecular polymer; and enabling the black silicon to be immerged into a surface treatment corrosive liquid so as to carry out surface optimization treatment, and acquiring a silicon wafer with a sub-micrometer structure and uniform texturing, wherein the surface treatment corrosive liquid is an additive containing mixed acid aqueous solution. The wet black silicon preparation method provided by the invention is simple in process and low in cost, the texturing surface of the black silicon after corrosion treatment is uniform and has no sharp boundary, and the reflectivity is 7-15%. The one-step wet black silicon preparation and surface treatment method greatly improves the absorption efficiency of a silicon cell for light, a solar cell prepared by using the black silicon prepared according to the method has low cell electric leakage rate, stable open-circuit voltage and high conversion efficiency.

Description

technical field [0001] The invention belongs to the field of solar cells, in particular to a one-step wet-process black silicon preparation and surface treatment method. Background technique [0002] The reflection of incident light on the surface of the silicon wafer greatly reduces the efficiency (current flow) of silicon solar cells. If the surface of the silicon cell is not treated with anti-reflection, about 40% of the sunlight will be lost. This antireflection effect must be effective across the entire solar spectrum and at a wide variety of incident light angles. [0003] Currently, antireflection on crystalline silicon photovoltaic cells is achieved through several different techniques. For monocrystalline silicon, anisotropic (pyramidal) texture etched silicon single crystals reduce reflectivity to about 5-15% above facing 100 monocrystalline silicon, but mainly at incident light angles close to 90° rather than reflection at low incidence angles At the same time,...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/0236C30B33/10
CPCC30B33/10H01L31/02363H01L31/1804Y02E10/547Y02P70/50
Inventor 韩庚欣丁晓辉韩冰徐涛
Owner 湖州三峰能源科技有限公司
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