Encapsulation-free high-brightness LED chip structure and manufacturing method thereof

Abstract

The invention provides a packaging-free high-luminance LED chip structure and a manufacturing method therefor. The packaging-free high-luminance LED chip structure comprises a GaN-based LED structure and a transparent substrate, wherein the GaN-based LED structure comprises a reflecting mirror, an N type GaN layer, a light-emitting layer, a P type GaN layer, a transparent electrode, a P electrode, an N electrode and a P electrode extraction electrode; the reflecting mirror, the N type GaN layer, the light-emitting layer, the P type GaN layer and the transparent electrode are stacked from the bottom up in sequence; one surface, far from the reflecting mirror, of the GaN-based LED structure is a P surface; the P electrode runs through the transparent electrode and is in contact connection with the P type GaN layer; the N electrode is positioned on the surface of the N type GaN layer or on the surface of the reflecting mirror; one end of the P electrode extraction electrode is connected with the P electrode while the other end runs through the P type GaN layer, the light-emitting layer, the N type GaN layer and the reflecting mirror and extends to the surface of the reflecting mirror; and the transparent substrate is bonded on the P surface of the GaN-based LED structure. The LED chip structure provided by the invention has the advantages of low electric leakage rate, capability of realizing the packaging-free effect, high luminous efficiency and the like.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a package-free high-brightness LED chip structure and a manufacturing method thereof. Background technique [0002] The existing LED chip structures mainly include: flip-chip structure, vertical chip structure and front-mount chip structure; among the above three chip structures, the flip-chip structure is the most commonly used mainstream chip structure. The existing flip-chip structure emits light from the back, and the efficiency of light extraction is low; and the growth substrate is not peeled off, and there is a large growth stress in the epitaxial layer, which makes the flip-chip structure have a large leakage rate; at the same time, the existing After the flip-chip structure is manufactured, resin or other materials need to be used for packaging, which increases the process steps and increases the production cost. Contents of the invention [0003] In view of th...

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Problems solved by technology

[0003] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a package-free high-brightness LED chip structure and its manufacturing method, which are used to solve the problem of the flip-chip structure in the prior art due to the use of back light. The problem of low light extraction efficiency; the large growth stress in the epitaxial layer due to the lack of peeling off the growth substrate, which makes the flip chip structure have a large leakage rate; and the process steps caused by the need for additional packaging processes increase, the problem of increased production costs

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