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Semiconductor structure and formation method thereof

A technology of semiconductor and laminated structure, applied in the fields of semiconductor device, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problem that the electrical performance of semiconductor structure needs to be improved, etc.

Inactive Publication Date: 2018-11-02
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, the electrical performance of the semiconductor structures formed by the prior art needs to be improved

Method used

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  • Semiconductor structure and formation method thereof
  • Semiconductor structure and formation method thereof
  • Semiconductor structure and formation method thereof

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Embodiment Construction

[0027] The electrical performance of semiconductor structures formed according to the background art needs to be improved. figure 1 with figure 2 A structural schematic diagram showing the formation process of a semiconductor structure is now combined with figure 1 with figure 2 The reasons why the electrical performance of the semiconductor structure needs to be improved are analyzed.

[0028] refer to figure 1 , providing substrate 100; using (NH 4 ) 2 The S solution performs sulfur doping treatment on the substrate 100 .

[0029] refer to figure 2 , using (NH 4 ) 2 After the sulfur doping treatment is performed on the substrate 100 by the S solution, a dielectric layer 110 is formed on the substrate 100 .

[0030] The electrical performance of the semiconductor structure formed by the above forming method needs to be improved.

[0031] After analysis, it is found that the reasons for the electrical performance of the semiconductor structure to be improved in...

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Abstract

The invention provides a semiconductor structure and a formation method thereof. The formation method comprises the following steps: providing a substrate; carrying out plasma sulfurizing treatment onthe substrate; and after the plasma sulfurizing treatment is carried out on the substrate, forming a high-K dielectric layer on the substrate. Electrical properties of the semiconductor structure formed by adopting the formation method of the invention are improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] With the rapid development of semiconductor technology, the feature size of semiconductor structures is constantly shrinking, which makes the integration of integrated circuits higher and higher, which also puts forward higher requirements for the performance of devices. [0003] Currently, as the size of Metal-Oxide Semiconductor Field Effect Transistors (MOSFETs) continues to decrease. In order to adapt to the reduction of process nodes, the channel length of MOSFET field effect transistors can only be continuously shortened. The shortening of the channel length has the advantages of increasing the die density of the chip and increasing the switching speed of the MOSFET field effect tube. [0004] However, as the channel length of the device is shortened, the distance bet...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/28H01L29/423
CPCH01L21/02178H01L21/02181H01L21/02263H01L21/02315H01L29/401H01L29/42364
Inventor 刘焕新
Owner SEMICON MFG INT (SHANGHAI) CORP
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