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A kind of gan-based led microdisplay device and manufacturing method thereof

A technology of a microdisplay device and a manufacturing method, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electric solid-state devices, etc., can solve the problems of easy breakage of connecting lines, poor stability, thin thickness, etc., and achieves improved luminous brightness and thermal stability. Good performance and high transparency

Active Publication Date: 2021-04-20
JIANGSU XINGUANGLIAN TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The market's pursuit of LED brightness is an eternal topic, as is LED micro-display devices. At the same time, there are still many problems in micro-pitch LED devices, such as its poor stability, and the P-electrode and N-electrode connecting lines at the unit LED isolation groove are easily broken. , SiO for LED isolation trenches in conventional processes 2 Insulation, thin and fragile, also has potential leakage

Method used

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  • A kind of gan-based led microdisplay device and manufacturing method thereof
  • A kind of gan-based led microdisplay device and manufacturing method thereof
  • A kind of gan-based led microdisplay device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Embodiment 1: as Figure 7 and Figure 8 As shown, a front-mounted GaN-based LED micro-display device includes a sapphire substrate 3, and several LED micro-display units 1 distributed in an array are arranged on the front of the sapphire substrate 3;

[0039] The LED micro-display unit 1 includes a buffer layer 4, an N-GaN layer 5, a multiple quantum well 6, a P-GaN layer 7 and a transparent conductive layer 8 on a sapphire substrate 3, and the transparent conductive layer 8 includes ITO. The N-GaN layer 5 is provided with an N electrode 11, and the N electrode 11 and the insulating SU8 glue 9 are provided with SiO 2 Insulation layer 10, SiO 2 a P electrode 12 on the insulating layer 10, and the P electrode 12 passes through the SiO 2 The insulating layer 10 is in contact with the transparent conductive layer 8;

[0040] A Bragg reflector DBR 2 is arranged on the back of the sapphire substrate 1; the Bragg reflector DBR2 includes multiple sets of alternately distri...

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Abstract

The invention belongs to the technical field of LED micro-displays, and provides a front-mounted GaN-based LED micro-display device and a manufacturing method thereof. The display units are separated by insulating SU glue; the LED micro-display unit includes a buffer layer on a sapphire substrate, an N-GaN layer, a multiple quantum well, a P-GaN layer and a transparent conductive layer. N electrode, a SiO insulating layer is arranged on the N electrode and the insulating SU glue, a P electrode is placed on the SiO insulating layer, and the P electrode passes through the SiO insulating layer and contacts the transparent conductive layer; a Bragg reflector DBR is arranged on the back of the sapphire substrate; The inventive microdisplay device is filled with thicker insulating SU8 glue in the LED unit isolation groove, which avoids the open circuit caused by electrode stress factors and ensures the stability of the LED microdisplay device; at the same time, the Bragg reflector DBR is used on the back to make the device The light output rate is better.

Description

technical field [0001] The invention relates to an LED micro-display device and a manufacturing method thereof, in particular to a front-mounted GaN-based LED micro-display device and a manufacturing method thereof, belonging to the technical field of LED micro-display screens. Background technique [0002] With the continuous development of the market economy, people's demand for LED displays is also growing. With the rapid progress and maturity of LED display technology and the improvement of customer requirements, the dot pitch of micro-pitch LED displays is getting smaller and smaller. It is widely used in video conferencing, command and dispatch center, security monitoring center, radio and television media and other fields. The high-definition display of micro-pitch LED display, high refresh rate, seamless splicing, good heat dissipation system, convenient and flexible disassembly and assembly, energy saving and environmental protection, etc. The characteristics have ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/15H01L33/38H01L33/46H01L33/48H01L33/64H01L21/76H01L21/762H01L33/00
CPCH01L21/7605H01L21/76224H01L27/156H01L33/007H01L33/387H01L33/46H01L33/48H01L33/641H01L2933/0033H01L2933/0075
Inventor 闫晓密张秀敏华斌王书宇田媛
Owner JIANGSU XINGUANGLIAN TECH
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