195results about How to "Good reflective properties" patented technology

Disclosed is an infrared light reflecting plate for reflecting infrared light, which comprises a substrate and at least four light-reflective layers X1, X2, X3 and X4 each of which is formed of a fixed cholesteric liquid-crystal phase. The reflection center wavelength of the light-reflective layers X1 and X2 is the same and is λ₁ (nm), the two layers reflect circularly-polarized light in opposite directions, and the reflection center wavelength λ₁ (nm) falls within a range of from 1010 to 1070 nm, and the reflection center wavelength of the light-reflective layers X3 and X4 is the same and is λ₂ (nm), the two layers reflect circularly-polarized light in opposite directions, and the reflection center wavelength λ₂ (nm) falls within a range of from 1190 to 1290 nm.

A film bulk acoustic resonator (FBAR) includes an insulation layer on a substrate to prevent a signal from being transmitted to a substrate. The FBAR includes a portion of a membrane layer corresponding to an activation area to adjust a resonance frequency band and improve a transmission gain of the resonance frequency band, the portion of the membrane layer being partially etched to have a thickness less than the other portion of the membrane layer. A method of forming the FBAR includes forming an sacrificing layer made of polysilicon, forming an air gap using a dry etching process, and forming a via hole. The method prevents structural problems occurred in a conventional air gap forming process and provides locations and the number of the via holes to be controlled.

The invention discloses a recheck platform which is used for rechecking defects in quality inspection of prints and comprises a rack, a working table, an unwinding wheel, a winding wheel, a position detection device, a power device and a microcontroller, wherein, the unwinding wheel and the winding wheel are arranged on the rack; the unwinding wheel transmits the prints to the winding wheel to rewind the prints; the winding wheel is connected with a power device; the position detection device detects the position to which the prints are transmitted and is connected with the microcontroller; the microcontroller stores the position information of defects of the prints and compares with the information of the position when the prints are transmitted to control the power device. The recheck platform can lighten the burden of visual sense detection device, thus the visual sense detection device is only responsible for detection, reconstructs the detection process, separates the process links such as time consuming stopping rejection and label supplementing and the like from the detection process, lowers cost and improves the efficiency of quality detection. The invention also relates to a system adopting the platform to detect the quality of prints.

There is disclosed an optical element, comprising, a supporting substrate, a multilayer film being supported on the substrate and reflecting extreme ultraviolet light, and an alloy layer provided between the multilayer film and the substrate.

To provide an infrared-light reflective plate having improved selective reflectivity characteristics, there is provided an infrared-light reflective plate reflects an infrared-light of equal to or longer than 700 nm including a substrate, and, on at least one of surfaces of the substrate, at least four light-reflective layers, X1, X2, X3 and X4, formed of a fixed cholesteric liquid crystal phase, and disposed in this order from the substrate, wherein the reflection center wavelengths of the light-reflective layers X1 and X2 are same with each other and are λ₁ (nm), and the two layers reflect circularly-polarized light in opposite directions; the reflection center wavelengths of the light-reflective layers X3 and X4 are same with each other and are λ₂ (nm), and the two layers reflect circularly-polarized light in opposite directions; and λ₁<λ₂ is satisfied.

An infrared-light reflective plate reflects an infrared-light ≧700 nm including a substrate of which fluctuation of retardation in plane at a wavelength of 1000 nm, Re(1000), ≧20 nm, on a surface of the substrate, at least two light-reflective layers, X1 and X2, formed of a fixed cholesteric liquid crystal phase, and, on another surface of the substrate, at least two light-reflective layers, Y1 and Y2, formed of a fixed cholesteric liquid crystal phase. The reflection center wavelengths of X1 and X2 are both λ_X1 (nm), and the two layers reflect circularly-polarized light in opposite directions; the reflection center wavelengths of Y1 and Y2 both λ_Y1 (nm). The two layers reflect circularly-polarized light in opposite directions; λ_X1≠λ_Y1; and refractive anisotropy of X1 and X2, Δn_X1 and Δn_X2 satisfy Δn_X2<Δn_X1. Refractive anisotropy of the light reflective layers Y1 and Y2, Δn_Y1 and Δn_Y2 satisfy Δn_Y2<Δn_Y1.

The invention relates to an LED chip and a processing technology thereof, and belongs to the technical field of manufacturing of photoelectron devices. The technology comprises the following steps: a P-type nitride layer on an epitaxial wafer substrate is etched to expose an N-type nitride layer; a current blocking layer is manufactured under a P-type electrode bonding pad area, an insulating substance under the P-type electrode bonding pad area, an insulating substance in direct contact with an N-type electrode bonding pad, and an expanding electrode and the P-type nitride layer, and an insulating substance on the side walls of a quantum well and P-type nitride are reserved through etching; an ITO film deposits on the surface of the substrate, a current expanding layer and alloy are manufactured through photoetching, a metal layer is formed on the surface of the substrate through vapor deposition, and after a part of the metal layer is stripped, a P-type electrode bonding pad, an N-type electrode bonding pad and an N metal expanding electrode are formed. Both the P-type electrode bonding pad and the N-type electrode bonding pad of the product are positioned on a P-type light-emitting surface and are the same in height; a part or all of the N metal expanding electrode is in direct contact with the N-type nitride layer. The invention has the advantages that the routing is convenient, the light-emitting efficiency and the brightness of the LED chip on the nitride substrate can be improved.

The high-frequency wiring board of the present invention is a wiring board that includes first coplanar lines and second coplanar lines formed on a different layer than the first coplanar lines; the first coplanar lines and second coplanar lines being connected at the line ends of each. The first coplanar lines are provided with a first signal line (10) and a first planar ground pattern (30a) formed on the same wiring layer as the first signal line (10). The second coplanar lines are provided with second signal line (11) formed on a wiring layer that differs from that of the first signal line (10), a second planar ground pattern 32 formed on the same wiring layer as the second signal line, and a first ground pattern (30b) formed on the same wiring layer as the first coplanar lines. The end of the first planar ground pattern (30a) and the end of the first ground pattern (30b) are connected and thus unified. In this high-frequency wiring board, the second planar ground pattern (32) is separated from the connection portion at the end of the first planar ground pattern (30a) in the direction in which the second coplanar lines extend from the vicinity of the connection portion of the first signal line and the second signal line.

A light-reflecting polycarbonate resin sheet is characterized in that a light-resistant layer for cutting or absorbing ultraviolet light is provided on at least one side of a polycarbonate resin foam layer. A light-reflecting laminate is obtained by superposing such a light-reflecting polycarbonate resin sheet on a metal plate. The light-reflecting polycarbonate resin sheet has high light resistance while maintaining excellent reflective characteristics.

An infrared low-emissivity coating material and a preparation method thereof belong to the technical field of functional materials. The infrared low-emissivity coating material comprises the following components by weight: 0.8 to 1 part of red slurry, 2 to 4 parts of yellow slurry, 1 to 3 parts of dispersing slurry of sheet aluminium powder, 35 to 37 parts of dispersing slurry of sheet aluminium powder coated with silicon dioxide or ferric oxide, 50 to 58 parts of solvent, 3 to 5 parts of curing agent and 0.1 to 0.3 part of flatting agent. The infrared low-emissivity coating material provided by the invention can simulate the spectral reflection curve of the northern ocher background, wherein a near infrared band has higher solar reflectivity, the average emissivity of a thermal infrared band of 3 to 5 Mum is lower than 0.35, and the average emissivity of a thermal infrared band of 8 to 14 Mum is lower than 0.45; and industrial production can be achieved.

A semiconductor light emitting device includes: a light emitting diode unit including a light-transmissive substrate having a face sloped upwardly at a lower edge thereof. A rear reflective lamination body is formed on the lower face and the surrounding sloped face of the light-transmissive substrate. The rear reflective lamination body includes an optical auxiliary layer and a metal reflective film formed on a lower face of the optical auxiliary layer. A junction lamination body is provided to a lower face of the rear reflective lamination body. The junction lamination body including a junction metal layer made of a eutectic metal material and a diffusion barrier film.

The invention relates to a GaN-based luminous diode chip with a current blocking structure and a manufacturing method of the GaN-based luminous diode chip. The GaN-based luminous diode chip comprises an epitaxial layer structure, a p electrode and an n electrode. The p electrode is composed of an ITO transparent electrode and a metal electrode. The metal electrode is located between the ITO transparent electrode and a p-type GaN and is surrounded by the ITO transparent electrode, the lower layer of the metal electrode is contacted with the p-type GaN in a Schottky mode, the metal electrode is contacted with the ITO transparent electrode in an Ohmic mode, the ITO transparent electrode is contacted with the p-type GaN in a Ohmic mode, and a window is formed in part of the ITO transparent electrode on the metal electrode. When the GaN-based luminous diode chip works, a great amount of light obliquely emitted to the lower surface of the metal electrode from the two sides is reflected back to the epitaxial layer layer, therefore, light absorbing amount of the metal electrode is reduced and external quantum efficiency of an LED is improved.

The invention discloses a yellow pigment able to reflect near infrared rays and a preparation method thereof. The pigment is prepared from a main phase, a doping phase and a mineralizing agent in a mass ratio. The main phase is titanium dioxide with a molar percentage content of 80-98%, the doping phase is 1-10% of basic nickel carbonate and 1-10% of antimony oxide, or 1-10% of iron oxide and 1-10% of magnesium oxide. The mineralizing agent is boric acid or boric acid and ammonium chloride, and accounts for 0.5-3wt% of the total mass of the main phase and the doping phase. The preparation method comprises: batching, ball milling, grinding, high temperature solid phase synthesis, grinding, sieving and other processes. The pigment product is an anatase phase structure, and the obtained product has very good thermal stability. The method provided by the invention is a high temperature solid phase synthesis process, and the equipment and operation are simple and practicable, thus being convenient for large-scale and industrialized production.

The invention relates to the electrodes of semiconductor device of GaN-based III-V compound, which includes: n electrode 6 and p electrode 7, and the n electrode 6 locates on the n-typed GaN (n - GaN) layer of the Epi-Wafers of the semiconductor device of GaN-based III-V compound, and the p electrode 7 locates on the p-typed GaN (p-Ga N) 4 and the transparent electrode 5 of the Epi-Wafers of the semiconductor device of GaN-based III-V compound. The n electrode 6 is composed of a ohmic contacting layer 6A, a barrier layer 6B and a metal pressed welding layer 6C, and p electrode 7 is composed of a adhesion conductive layer 7A, a barrier layer 7B and a metal pressed welding layer 7C. Its feature is: the ohmic contacting layer 6A and adhesion conductive layer 7A are Cr, and metal pressed welding layer 6C and 7C is Al.

A CMOS image sensor and a method for fabricating the same can ensure isolation characteristics using a shallow trench isolation (STI) process and a selective epitaxy method. The CMOS image sensor and method for fabricating the same can also reduce pixel size. The CMOS image sensor includes a semiconductor substrate, a first photodiode, a first epitaxial layer, a second epitaxial layer, a plurality of device isolation layers formed in isolation regions formed at the second epitaxial layer, a second photodiode formed between the device isolation layers, and a third epitaxial layer.

The present invention provides a coating material for forming a coating layer that can achieve excellent adhesion to a transparent film. The coating material is prepared so that it contains a thermosetting resin, an inorganic filler, and a mixed solvent containing cyclohexanone. The content of the thermosetting resin is in the range from 5 to 20 wt % with respect to the total amount of the thermosetting resin and the inorganic filler, and the content of the cyclohexanone is in the range from 25 to 35 wt % with respect to the entire mixed solvent. By coating a surface of a transparent film with this coating material and then heat-treating the resultant coating, a coating layer with excellent adhesion can be formed on transparent film. The thus-obtained laminate of the transparent film and the coating layer can be used as an antireflection film.

The present invention provides an organic electroluminescence component and a manufacturing method thereof. The component and the method are provided to obtain an organic EL component, the reflection characteristic of a metal reflection film is enhanced to enhance luminance of the organic EL component, thus degradation of the metal reflection film caused heat and light generated during the lighting process of the organic EL component can be inhibited to prevent the metal reflection film from peeling off from a substrate and a luminous layer and avoid luminous intensity, and durability can be enhanced. The organic electroluminescence component (100) is successively provided with a substrate (101), a metal reflection film (102), an enhanced reflection transparent film (103), a transparent conductive layer (104), a luminous layer (105) and a transparent electrode layer (106), and the component is characterized in that the metal reflection film (102) comprises a metal nanoparticle sintering body and additives, and the enhanced reflection transparent film (103) comprises light-admitting bonder.