199results about How to "Good reflective properties" patented technology

The invention relates to a nitride semiconductor LED and a fabrication method thereof. In the LED, a first nitride semiconductor layer, an active region a second nitride semiconductor layer of a light emitting structure are formed in their order on a transparent substrate. A dielectric mirror layer is formed on the underside of the substrate, and has at least a pair of alternating first dielectric film of a first refractivity and a second dielectric film of a second refractivity larger than the first refractivity. A lateral insulation layer is formed on the side of the substrate and the light emitting structure. The LED of the invention effectively collimate undesirably-directed light rays, which may be otherwise extinguished, to maximize luminous efficiency, and are protected by the dielectric mirror layer formed on the side thereof to remarkably improve ESD characteristics.

Disclosed is a heat-dissipating resin composition which is used for forming a substrate for LED mounting or a reflector provided on the substrate for LED mounting, and excellent in heat dissipation, electrical insulation, heat resistance and light resistance during the time when an LED element emits light. Also disclosed are a substrate for LED mounting and a reflector respectively containing such a heat-dissipating resin composition. Specifically disclosed is a composition containing a thermoplastic resin such as a modified PBT and a thermally conductive filler such as a flake boron nitride. The composition has a heat distortion temperature of not less than 120 DEG C, a thermal conductivity of not less than 2.0 W / (m K) and a thermal emissivity of not less than 0.7.

The present invention provides an optical device, method for producing master for use in producing optical device, and photoelectric conversion apparatus. In an optical element, a large number of structures, each of which is composed of a protruding section or a recessed section, are arranged on a surface of a base body at a fine pitch smaller than the wavelength of visible light. The structures are arranged to form a plurality of rows of circular tracks on the surface of the base body and to form a quasi-hexagonal grid pattern. The structure is an elliptical cone or an elliptical cone trapezoid having a long axis direction in the circumference direction of the circular track.

According to one embodiment of the disclosure, an unmanned vehicle message conversion system generally includes a message interpreter that is coupled between a first unmanned vehicle control interface and a second unmanned vehicle control interface. The second unmanned vehicle control interface is configured to transmit and receive messages with a messaging protocol that is different than the first unmanned vehicle control interface. The message interpreter is operable to receive a first message from the unmanned vehicle control system, convert the first message to a second message having the second protocol, and transmit the second message to the unmanned vehicle.

Disclosed is an infrared reflecting plate exhibiting an improved selective reflection characteristic. The infrared reflecting plate comprises a substrate having Re (1000) the variation of which is 20 nm or more, at least two light reflecting layers (X1, X2) provided on one surface of the substrate and containing a fixed cholesteric liquid crystal phase, and at least two light reflecting layers (Y1, Y2) provided on the other surface of the substrate and containing a fixed cholesteric liquid crystal phase. The reflective center wavelength of the light reflecting layers (X1, X2) is Lambda X1 (nm), the light reflecting layers reflect circularly polarized light beams the directions of the polarization of which are opposite to each other and which are equal to each other, the reflection center wavelength of the light reflecting layers (Y1, Y2) is Lambda Y1 (nm), the light reflecting layers (Y1, Y2) reflect circularly polarized light beams the directions of the polarization of which are opposite to each other and which are equal to each other, Lambda X1 and Lambda Y1 are not equal to each other, the respective refractive index anisotropies Delta nX1, and Delta nX2 of the light reflecting layer (X1) (lower layer) and the light reflecting layer (X2) (upper layer) satisfy Delta nX2<Delta nX1, and the respective refractive index anisotropies Delta nY1, Delta nY2 of the light reflecting layer (Y1) (lower layer) and the light reflecting layer (Y2); (upper layer) satisfy Delta nY2 < Delta nY1.

The present invention suppresses to a minimum the degradation of the transmission quality caused by chromatic dispersion characteristic of an optical transmission medium, and the interplay between the chromatic dispersion and non-linear optical effects in dense WDM transport systems. A baseband input data signal is pre-coded in advance by a pre-coding unit, phase modulation is carried out using a pre-coded signal by the optical phase modulating unit, and the phase modulated optical signal is converted to an RZ intensity modulated signal by the optical filter unit that performs phase-shift-keying to amplitude-shift-keying conversion. For example, an optical phase modulating unit generates an encoded DPSK phase modulated signal using a differential phase shirt keying (DPSK) format, and a phase modulated signal is converted to an RZ intensity modulated signal by the optical filter unit disposed downstream of the optical phase modulating unit.

A lead frame for an optical semiconductor device, having a reflection layer at least on one side or each side of the outermost surface of a substrate, partially or entirely, in which the reflection layer has, on the outermost surface at least in a region where light emitted by an optical semiconductor element is reflected, a microstructure with at least the surface thereof having been mechanically deformed, which is converted from a plating microstructure formed of a metal or an alloy thereof; a method of producing the same, and an optical semiconductor device having the same.

Provided is an infrared light reflector exhibiting improved selective reflection properties. The infrared light reflector is provided with a substrate and at least four light reflecting layers (X1, X2, X3, X4), which is obtained by immobilizing a cholesteric liquid crystal phase, on at least one surface of the substrate in the order from X1 to X4. The light reflecting layers (X1, X2) both have a reflection center wavelength of [lambda]1 (nm) and reflect circularly-polarized light having inverse propagation directions, and the light reflecting layers (X3, X4) both have a reflection center wavelength of [lambda]2 (nm) and reflect circularly-polarized light having inverse propagation directions; and [lambda]2 is greater than [lambda]1.