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Electrode of gallium nitride base III-V. class compound semiconductor

A gallium nitride-based and compound technology is applied in semiconductor devices, semiconductor/solid-state device parts, electric solid-state devices, etc. It can solve the problems of not being able to make two electrodes at the same time, increasing the forward voltage drop Vf of the device, and device leakage current Ir increase and other issues, to achieve good reflective properties, enhanced reliability, and simple manufacturing process

Active Publication Date: 2007-07-18
HC SEMITEK SUZHOU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There is a problem when this method is directly used on gallium nitride-based II-V compound semiconductor devices: for the Ti / Al structure, two electrodes cannot be fabricated at the same time
If two electrodes are made at the same time, the thermal stability of the chip is relatively poor without annealing, and it cannot withstand high temperatures. For example, the lead-free solder used in device applications requires high temperature, which will lead to an increase in the forward voltage drop Vf of the device; under the condition of annealing, the leakage current Ir of the device will increase sharply, and the photoelectric characteristics will decline significantly

Method used

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  • Electrode of gallium nitride base III-V. class compound semiconductor
  • Electrode of gallium nitride base III-V. class compound semiconductor
  • Electrode of gallium nitride base III-V. class compound semiconductor

Examples

Experimental program
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Embodiment 1

[0033] See Figures 2, 3, 4 and 7. First, the sapphire epitaxial wafer as shown in Figure 2 is etched with reactive ion etching to remove part of the p-GaN layer 4, the multilayer quantum well layer 3, and the n-GaN layer 2, so that an n- GaN platform. Then a layer of transparent electrode 5 is evaporated on the p-GaN region, and it is heat-treated to form an ohmic contact with the p-GaN layer 4 (as shown in FIG. 3 ). Then, Cr / Pt / Al is evaporated sequentially on the etched n-GaN platform, and then the metal lift-off process is used to form an ohmic contact layer 6A, a metal barrier layer 6B and a bonding layer 6C in the n-GaN region (as shown in Figure 4 shown). And the n electrode is annealed to make it form a good ohmic contact with the n-GaN region. Then, Cr / Pt / Al is sequentially evaporated on the p-GaN region, and a metal lift-off process is used to form an adhesive conductive layer 7A, a metal barrier layer 7B and a bonding layer 7C in the p-GaN region (as shown in FIG....

Embodiment 2

[0035]See Figures 2, 3, 5, 6 and 7. As in Embodiment 1, an n-GaN platform is etched on the sapphire epitaxial wafer, and a layer of transparent electrode 5 is evaporated to form an ohmic contact. Then sequentially evaporate Cr / Pt / Al on the n-GaN region and the p-GaN region, and then use the metal lift-off process to form the ohmic contact layer 6A and the adhesive conductive layer 7A of the n-GaN region and the p-GaN region, Metal barrier layers 6B, 7B and bonding layers 6C, 7C (as shown in FIG. 5 , FIG. 6 , and FIG. 7 ).

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Abstract

The invention relates to the electrodes of semiconductor device of GaN-based III-V compound, which includes: n electrode 6 and p electrode 7, and the n electrode 6 locates on the n-typed GaN (n - GaN) layer of the Epi-Wafers of the semiconductor device of GaN-based III-V compound, and the p electrode 7 locates on the p-typed GaN (p-Ga N) 4 and the transparent electrode 5 of the Epi-Wafers of the semiconductor device of GaN-based III-V compound. The n electrode 6 is composed of a ohmic contacting layer 6A, a barrier layer 6B and a metal pressed welding layer 6C, and p electrode 7 is composed of a adhesion conductive layer 7A, a barrier layer 7B and a metal pressed welding layer 7C. Its feature is: the ohmic contacting layer 6A and adhesion conductive layer 7A are Cr, and metal pressed welding layer 6C and 7C is Al.

Description

technical field [0001] The invention relates to a gallium nitride-based III-V group compound semiconductor device chip electrode. Background technique [0002] Group III-V nitrides, including, for example, gallium nitride (GaN), aluminum gallium nitride (GaAIN), indium gallium nitride (InGaN), and aluminum indium gallium nitride (InAlGaN), have direct energy bands, energy It has the characteristics of large bandwidth, high saturation drift rate, high breakdown electric field, and good chemical stability, and has a wide range of uses in communications and displays. [0003] Generally speaking, the metal electrodes of gallium nitride-based III-V compound semiconductor device chips currently produced are all multi-layer composite structures, and Cr / Au, Cr / Pt / Au, Cr / Ni / Au are the most widely used, They all use a layer of low-resistance Au as the bonding layer. [0004] A side cross-sectional view of a GaN LED ( FIG. 1 ) shows a typical structure of a metal electrode of a GaN-b...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L23/48H01L33/40
CPCH01L2924/0002
Inventor 张建宝徐韬
Owner HC SEMITEK SUZHOU
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