GaN-based luminous diode chip with current blocking structure and manufacturing method thereof

Abstract

The invention relates to a GaN-based luminous diode chip with a current blocking structure and a manufacturing method of the GaN-based luminous diode chip. The GaN-based luminous diode chip comprises an epitaxial layer structure, a p electrode and an n electrode. The p electrode is composed of an ITO transparent electrode and a metal electrode. The metal electrode is located between the ITO transparent electrode and a p-type GaN and is surrounded by the ITO transparent electrode, the lower layer of the metal electrode is contacted with the p-type GaN in a Schottky mode, the metal electrode is contacted with the ITO transparent electrode in an Ohmic mode, the ITO transparent electrode is contacted with the p-type GaN in a Ohmic mode, and a window is formed in part of the ITO transparent electrode on the metal electrode. When the GaN-based luminous diode chip works, a great amount of light obliquely emitted to the lower surface of the metal electrode from the two sides is reflected back to the epitaxial layer layer, therefore, light absorbing amount of the metal electrode is reduced and external quantum efficiency of an LED is improved.

Description

technical field [0001] The invention relates to a GaN-based light-emitting diode chip with a current blocking structure and a manufacturing method thereof, which is applied to making a high-brightness GaN-based light-emitting diode chip. Background technique [0002] Since the 1990s, GaN-based blue LEDs have been widely used as a new type of light source in various fields of social life, such as outdoor display, landscape lighting, and instrument indication. At present, white lighting products based on GaN-based blue LEDs are beginning to be applied in the lighting field. However, a key factor restricting the development of semiconductor lighting is the light efficiency of GaN-based blue LEDs, including internal quantum efficiency and external quantum efficiency. Today, the development of epitaxial technology can increase the internal quantum efficiency to more than 90%, but the external quantum efficiency is very low. [0003] ITO transparent electrode technology plays an...

AI Technical Summary

Problems solved by technology

But there are still two problems: 1. The current expansion capability of ITO electrodes is limited; 2. It is impossible to weld wires on ITO materials.

[0006] The current blocking structure mentioned above does not emit light in the epitaxial layer directly below the metal electrode, which can reduce the absorption of light by the metal electrode to a certain extent, but the light emitted in the epitaxial layer below the left and right sides of the metal electrode still has There is a high probability that it will irradiate the bottom of the metal electrode and be absorbed

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