High-response avalanche photodiode fabrication method
An avalanche photoelectric and diode technology, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of process complexity and high growth cost, and achieve the effect of increasing the light absorption length and reducing the preparation cost
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[0027] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0028] The invention proposes a manufacturing method of an avalanche photodiode, Figure 1-9 The process flow diagram corresponding to the manufacturing method is shown, see Figure 1-9 As shown, the method specifically includes the following steps:
[0029] Step 1: growing an epitaxial wafer, the structure of the epitaxial wafer specifically includes: a semi-insulating InP substrate, In 0.53 Ga 0.47 As sacrificial layer, N-type InP ohmic contact layer, In 0.53 Ga 0.47 As absorption layer, InGaAsP composition graded layer, thickness is 150nm, doping concentration is 1.5×10 17 cm -3 InP charge control layer, InP multiplication layer, InP cap layer, heavily doped P-type In 0.53 Ga 0.47 As ohmic contact layer;
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